WST2088 N-channel 20V 8.8A SOT-23-3L WINSOK MOSFET

short description:

Model Number: WST2088

BVDSS: 20V

RDSON: 8mΩ

ID: 8.8A

Channel: N-channel

Package: SOT-23-3L

Product Summery: The voltage of WST2088 MOSFET is 20V, the current is 8.8A, the resistance is 8mΩ , the channel is N-channel, and the package is SOT-23-3L.

Applications: Electronic cigarettes, controllers, digital devices, small home appliances, and consumer electronics.

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General Description

The WST2088 MOSFETs are the most advanced N-channel transistors on the market. They have an incredibly high cell density, which results in excellent RDSON and gate charge. These MOSFETs are perfect for small power switching and load switch applications. They meet RoHS and Green Product requirements and have been fully tested for reliability.

Features

Advanced Trench technology with high cell density, Super Low Gate Charge, and excellent Cdv/dt effect decline, making it a Green Device.

Applications

Power applications, circuits with hard switching and high frequency, uninterrupted power supplies, e-cigarettes, controllers, electronic devices, small home appliances, and consumer electronics.

corresponding material number

AO AO3416, DINTEK DTS2300A DTS2318 DTS2314 DTS2316 DTS2322 DTS3214, etc.

Important parameters

Symbol	Parameter	Rating	Units
VDS	Drain-Source Voltage	20	V
VGS	Gate-Source Voltage	±12	V
ID@Tc=25℃	Continuous Drain Current, VGS @ 4.5V	8.8	A
ID@Tc=70℃	Continuous Drain Current, VGS @ 4.5V	6.2	A
IDP	Pulsed Drain Current	40	A
PD@TA=25℃	Total Power Dissipation	1.5	W
TSTG	Storage Temperature Range	-55 to 150	℃
TJ	Operating Junction Temperature Range	-55 to 150	℃

Electrical Characteristics (TJ=25 ℃, unless otherwise noted)

Symbol	Parameter	Conditions	Min.	Typ.	Max.	Unit
BVDSS	Drain-Source Breakdown Voltage	VGS=0V, ID=250uA	20	---	---	V
△BVDSS/△TJ	BVDSS Temperature Coefficient	Reference to 25℃, ID=1mA	---	0.018	---	V/℃
RDS(ON)	Static Drain-Source On-Resistance2	VGS=4.5V, ID=6A	---	8	13	mΩ
RDS(ON)	Static Drain-Source On-Resistance2	VGS=2.5V, ID=5A	---	10	19	mΩ
VGS(th)	Gate Threshold Voltage	VGS=VDS , ID =250uA	0.5	---	1.3	V
IDSS	Drain-Source Leakage Current	VDS=16V , VGS=0V.	---	---	10	uA
IGSS	Gate-Source Leakage Current	VGS=±12V , VDS=0V	---	---	±100	nA
Qg	Total Gate Charge	VDS=15V , VGS=4.5V , ID=6A	---	16	---	nC
Qgs	Gate-Source Charge		---	3	---
Qgd	Gate-Drain Charge		---	4.5	---
Td(on)	Turn-On Delay Time	VDS=10V , VGS=4.5V ,RG=3.3Ω ID=1A	---	10	---	ns
Tr	Rise Time		---	13	---
Td(off)	Turn-Off Delay Time		---	28	---
Tf	Fall Time		---	7	---
Ciss	Input Capacitance	VDS=15V , VGS=0V , f=1MHz	---	1400	---	pF
Coss	Output Capacitance		---	170	---
Crss	Reverse Transfer Capacitance		---	135	---