WST2078 N&P Channel 20V/-20V 3.8A/-4.5A SOT-23-6L WINSOK MOSFET

short description:

Model Number: WST2078

BVDSS: 20V/-20V

RDSON: 45mΩ/65mΩ

ID: 3.8A/-4.5A

Channel: N&P Channel

Package: SOT-23-6L

Product Summery: The WST2078 MOSFET has voltage ratings of 20V and -20V. It can handle currents of 3.8A and -4.5A, and has resistance values of 45mΩ and 65mΩ. The MOSFET has both N&P Channel capabilities and comes in a SOT-23-6L package.

Applications: E-cigarettes, controllers, digital products, appliances, and consumer electronics.

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Product Tags

General Description

The WST2078 is the best MOSFET for small power switches and load applications. It has a high cell density that provides excellent RDSON and gate charge. It meets the RoHS and Green Product requirements and has been approved for full function reliability.

Features

Advanced technology with high cell density trenches, extremely low gate charge, and excellent reduction of Cdv/dt effects. This device is also environmentally friendly.

Applications

High-frequency point-of-load synchronous small power switching is perfect for use in MB/NB/UMPC/VGA, networking DC-DC power systems, load switches, e-cigarettes, controllers, digital products, small household appliances, and consumer electronics.

corresponding material number

AOS AO6604 AO6608,VISHAY Si3585CDV,PANJIT PJS6601.

Important parameters

Symbol	Parameter	Rating		Units
Symbol	Parameter	N-Channel	P-Channel	Units
VDS	Drain-Source Voltage	20	-20	V
VGS	Gate-Source Voltage	±12	±12	V
ID@Tc=25℃	Continuous Drain Current, VGS @ 4.5V1	3.8	-4.5	A
ID@Tc=70℃	Continuous Drain Current, VGS @ 4.5V1	2.8	-2.6	A
IDM	Pulsed Drain Current2	20	-13	A
PD@TA=25℃	Total Power Dissipation3	1.4	1.4	W
TSTG	Storage Temperature Range	-55 to 150	-55 to 150	℃
TJ	Operating Junction Temperature Range	-55 to 150	-55 to 150	℃

Symbol	Parameter	Conditions	Min.	Typ.	Max.	Unit
BVDSS	Drain-Source Breakdown Voltage	VGS=0V , ID=250uA	20	---	---	V
△BVDSS/△TJ	BVDSS Temperature Coefficient	Reference to 25℃ , ID=1mA	---	0.024	---	V/℃
RDS(ON)	Static Drain-Source On-Resistance2	VGS=4.5V , ID=3A	---	45	55	mΩ
		VGS=2.5V , ID=1A	---	60	80
		VGS=1.8V , ID=1A	---	85	120
VGS(th)	Gate Threshold Voltage	VGS=VDS , ID =250uA	0.5	0.7	1	V
△VGS(th)	VGS(th) Temperature Coefficient	VGS=VDS , ID =250uA	---	-2.51	---	mV/℃
IDSS	Drain-Source Leakage Current	VDS=16V , VGS=0V , TJ=25℃	---	---	1	uA
IDSS	Drain-Source Leakage Current	VDS=16V , VGS=0V , TJ=55℃	---	---	5	uA
IGSS	Gate-Source Leakage Current	VGS=±8V , VDS=0V	---	---	±100	nA
gfs	Forward Transconductance	VDS=5V , ID=1A	---	8	---	S
Rg	Gate Resistance	VDS=0V , VGS=0V , f=1MHz	---	2.5	3.5	Ω
Qg	Total Gate Charge (4.5V)	VDS=10V , VGS=10V , ID=3A	---	7.8	---	nC
Qgs	Gate-Source Charge		---	1.5	---
Qgd	Gate-Drain Charge		---	2.1	---
Td(on)	Turn-On Delay Time	VDD=10V , VGEN=4.5V , RG=6Ω ID=3A RL=10Ω	---	2.4	4.3	ns
Tr	Rise Time		---	13	23
Td(off)	Turn-Off Delay Time		---	15	28
Tf	Fall Time		---	3	5.5
Ciss	Input Capacitance	VDS=10V , VGS=0V , f=1MHz	---	450	---	pF
Coss	Output Capacitance		---	51	---
Crss	Reverse Transfer Capacitance		---	52	---