WST2078 N&P Channel 20V/-20V 3.8A/-4.5A SOT-23-6L WINSOK MOSFET

WST2078 N&P Channel 20V/-20V 3.8A/-4.5A SOT-23-6L WINSOK MOSFET

short description:


  • Model Number: WST2078
  • BVDSS: 20V/-20V
  • RDSON: 45mΩ/65mΩ
  • ID: 3.8A/-4.5A
  • Channel: N&P Channel
  • Package: SOT-23-6L
  • Product Summery: The WST2078 MOSFET has voltage ratings of 20V and -20V. It can handle currents of 3.8A and -4.5A, and has resistance values of 45mΩ and 65mΩ. The MOSFET has both N&P Channel capabilities and comes in a SOT-23-6L package.
  • Applications: E-cigarettes, controllers, digital products, appliances, and consumer electronics.
  • Product Detail

    Application

    Product Tags

    General Description

    The WST2078 is the best MOSFET for small power switches and load applications. It has a high cell density that provides excellent RDSON and gate charge. It meets the RoHS and Green Product requirements and has been approved for full function reliability.

    Features

    Advanced technology with high cell density trenches, extremely low gate charge, and excellent reduction of Cdv/dt effects. This device is also environmentally friendly.

    Applications

    High-frequency point-of-load synchronous small power switching is perfect for use in MB/NB/UMPC/VGA, networking DC-DC power systems, load switches, e-cigarettes, controllers, digital products, small household appliances, and consumer electronics.

    corresponding material number

    AOS AO6604 AO6608,VISHAY Si3585CDV,PANJIT PJS6601.

    Important parameters

    Symbol Parameter Rating Units
    N-Channel P-Channel
    VDS Drain-Source Voltage 20 -20 V
    VGS Gate-Source Voltage ±12 ±12 V
    ID@Tc=25℃ Continuous Drain Current, VGS @ 4.5V1 3.8 -4.5 A
    ID@Tc=70℃ Continuous Drain Current, VGS @ 4.5V1 2.8 -2.6 A
    IDM Pulsed Drain Current2 20 -13 A
    PD@TA=25℃ Total Power Dissipation3 1.4 1.4 W
    TSTG Storage Temperature Range -55 to 150 -55 to 150
    TJ Operating Junction Temperature Range -55 to 150 -55 to 150
    Symbol Parameter Conditions Min. Typ. Max. Unit
    BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 20 --- --- V
    △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA --- 0.024 --- V/℃
    RDS(ON) Static Drain-Source On-Resistance2 VGS=4.5V , ID=3A --- 45 55
    VGS=2.5V , ID=1A --- 60 80
    VGS=1.8V , ID=1A --- 85 120
    VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 0.5 0.7 1 V
    △VGS(th) VGS(th) Temperature Coefficient --- -2.51 --- mV/℃
    IDSS Drain-Source Leakage Current VDS=16V , VGS=0V , TJ=25℃ --- --- 1 uA
    VDS=16V , VGS=0V , TJ=55℃ --- --- 5
    IGSS Gate-Source Leakage Current VGS=±8V , VDS=0V --- --- ±100 nA
    gfs Forward Transconductance VDS=5V , ID=1A --- 8 --- S
    Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 2.5 3.5 Ω
    Qg Total Gate Charge (4.5V) VDS=10V , VGS=10V , ID=3A --- 7.8 --- nC
    Qgs Gate-Source Charge --- 1.5 ---
    Qgd Gate-Drain Charge --- 2.1 ---
    Td(on) Turn-On Delay Time VDD=10V , VGEN=4.5V , RG=6Ω

    ID=3A RL=10Ω

    --- 2.4 4.3 ns
    Tr Rise Time --- 13 23
    Td(off) Turn-Off Delay Time --- 15 28
    Tf Fall Time --- 3 5.5
    Ciss Input Capacitance VDS=10V , VGS=0V , f=1MHz --- 450 --- pF
    Coss Output Capacitance --- 51 ---
    Crss Reverse Transfer Capacitance --- 52 ---

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