WSR50N06 N-channel 60V 50A TO-220-3L WINSOK MOSFET

WSR50N06 N-channel 60V 50A TO-220-3L WINSOK MOSFET

short description:

  • Part Number:WSR50N06
  • BVDSS:60V
  • ID:50A
  • RDSON:16mΩ  
  • Channel:N-channel
  • Package:TO-220-3L
  • Delivery Method: Spot supply
  • Lead Time:One week
Reference Price
Quantity (Cut Tape (CT) & Digi-Reel®) Unit Price Range
1-99 $0.150~0.164
100-499 $0.136~0.149
500-2999 $0.123~0.135
3000-10000 $0.110~0.122

Product Detail

Application

Product Tags

WINSOK WSR50N06 MOSFET General Description

The WSR50N06 is the highest performance trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications .

The WSR50N06 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved.

Benefits & Features

These N-Channel enhancement mode power field-effect transistors are produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance , provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products.

Features
• 50A, 60V, RDS(on) = 0.022Ω @VGS = 10 V
• Low gate charge ( typical 31 nC)
• Low Crss ( typical 65 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating

Applications

•  High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA
•  Networking DC-DC Power System
•  LCD/LED back light

TO-220F Pin Configuration

image (1)

Absolute Maximum Ratings

Symbol Parameter Rating Units
VDS Drain-Source Voltage 60 V
VGS Gate-Source Voltage ±20 V
ID@TC=25℃ Continuous Drain Current, VGS @ 10V1 50 A
ID@TC=100℃ Continuous Drain Current, VGS @ 10V1 32 A
ID@TA=25℃ Continuous Drain Current, VGS @ 10V1 10 A
ID@TA=70℃ Continuous Drain Current, VGS @ 10V1 8 A
IDM Pulsed Drain Current2 180 A
EAS Single Pulse Avalanche Energy3 35 mJ
IAS Avalanche Current 28 A
PD@TC=25℃ Total Power Dissipation4 53 W
PD@TA=25℃ Total Power Dissipation4 3.5 W
TSTG Storage Temperature Range -55 to 150
TJ Operating Junction Temperature Range -55 to 150

MOSFET parameters:

Part,number

Configuration

Type

VDS

VGS

ID,(A)

RDS(ON)(mΩ)

RDS(ON)(mΩ)

Ciss

Package

@10V

@6V

@4.5V

@2.5V

@1.8V

(V)

±(V)

Max.

Typ.

Max.

Typ.

Max.

Typ.

Max.

Typ.

Max.

Typ.

Max.

(pF)

WSR50N06

Single

N-Ch

60

20

50

16

20

-

-

22

26

-

-

-

-

2458

TO-220-3L


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