WSR50N06 N-channel 60V 50A TO-220-3L WINSOK MOSFET
WINSOK WSR50N06 MOSFET General Description
The WSR50N06 is the highest performance trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications .
The WSR50N06 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved.
Benefits & Features
These N-Channel enhancement mode power field-effect transistors are produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance , provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products.
Features
• 50A, 60V, RDS(on) = 0.022Ω @VGS = 10 V
• Low gate charge ( typical 31 nC)
• Low Crss ( typical 65 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
Applications
• High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA
• Networking DC-DC Power System
• LCD/LED back light
Absolute Maximum Ratings
Symbol | Parameter | Rating | Units |
---|---|---|---|
VDS | Drain-Source Voltage | 60 | V |
VGS | Gate-Source Voltage | ±20 | V |
ID@TC=25℃ | Continuous Drain Current, VGS @ 10V1 | 50 | A |
ID@TC=100℃ | Continuous Drain Current, VGS @ 10V1 | 32 | A |
ID@TA=25℃ | Continuous Drain Current, VGS @ 10V1 | 10 | A |
ID@TA=70℃ | Continuous Drain Current, VGS @ 10V1 | 8 | A |
IDM | Pulsed Drain Current2 | 180 | A |
EAS | Single Pulse Avalanche Energy3 | 35 | mJ |
IAS | Avalanche Current | 28 | A |
PD@TC=25℃ | Total Power Dissipation4 | 53 | W |
PD@TA=25℃ | Total Power Dissipation4 | 3.5 | W |
TSTG | Storage Temperature Range | -55 to 150 | ℃ |
TJ | Operating Junction Temperature Range | -55 to 150 | ℃ |
MOSFET parameters:
Part,number |
Configuration |
Type |
VDS |
VGS |
ID,(A) |
RDS(ON)(mΩ) |
RDS(ON)(mΩ) |
Ciss |
Package |
||||||||
@10V |
@6V |
@4.5V |
@2.5V |
@1.8V |
|||||||||||||
(V) |
±(V) |
Max. |
Typ. |
Max. |
Typ. |
Max. |
Typ. |
Max. |
Typ. |
Max. |
Typ. |
Max. |
(pF) |
||||
Single |
N-Ch |
60 |
20 |
50 |
16 |
20 |
- |
- |
22 |
26 |
- |
- |
- |
- |
2458 |
TO-220-3L |