WSR50N06 N-channel 60V 50A TO-220-3L WINSOK MOSFET

Part Number

WSR50N06

BVDSS

60V

50A

RDSON

16mΩ

Package

TO-220-3L

Lead Time

One week

The WSR50N06 is a cost-effective MOSFET solution widely adopted across various applications, making it an ideal choice for emerging markets. This N-channel enhancement mode transistor offers excellent performance-to-price ratio, perfectly suited for economical electronic solutions in developing regions.

Reference Price
Quantity (Cut Tape (CT) & Digi-Reel®)	Unit Price Range
1-99	$0.150~0.164
100-499	$0.136~0.149
500-2999	$0.123~0.135
3000-10000	$0.110~0.122

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Product Detail

Application

Product Tags

WINSOK WSR50N06 MOSFET General Description

The WSR50N06 is the highest performance trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications .

The WSR50N06 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved.

Benefits & Features

These N-Channel enhancement mode power field-effect transistors are produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance , provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products.

Features
• 50A, 60V, RDS(on) = 0.022Ω @VGS = 10 V
• Low gate charge ( typical 31 nC)
• Low Crss ( typical 65 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating

Applications

• High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA
• Networking DC-DC Power System
• LCD/LED back light

TO-220F Pin Configuration

Absolute Maximum Ratings

Symbol	Parameter	Rating	Units
V_DS	Drain-Source Voltage	60	V
V_GS	Gate-Source Voltage	±20	V
I_D@T_C=25℃	Continuous Drain Current, V_GS @ 10V¹	50	A
I_D@T_C=100℃	Continuous Drain Current, V_GS @ 10V¹	32	A
I_D@T_A=25℃	Continuous Drain Current, V_GS @ 10V¹	10	A
I_D@T_A=70℃	Continuous Drain Current, V_GS @ 10V¹	8	A
I_DM	Pulsed Drain Current²	180	A
E_AS	Single Pulse Avalanche Energy³	35	mJ
I_AS	Avalanche Current	28	A
P_D@T_C=25℃	Total Power Dissipation⁴	53	W
P_D@T_A=25℃	Total Power Dissipation⁴	3.5	W
T_STG	Storage Temperature Range	-55 to 150	℃
T_J	Operating Junction Temperature Range	-55 to 150	℃

MOSFET parameters：

Part,number

Configuration

Type

VDS

VGS

ID,(A)

RDS(ON)(mΩ)

Ciss

Package

@10V

@6V

@4.5V

@2.5V

@1.8V

(V)

±(V)

Max.

Typ.

Max.

Typ.

Max.

Typ.

Max.

Typ.

Max.

Typ.

Max.

(pF)

WSR50N06

Single

N-Ch

2458

TO-220-3L

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