WSR200N08 N-channel 80V 200A TO-220-3L WINSOK MOSFET

short description:

Model Number: WSR200N08

BVDSS: 80V

RDSON: 2.9mΩ

ID: 200A

Channel: N-channel

Package: TO-220-3L

Product Summery: The WSR200N08 MOSFET can handle up to 80 volts and 200 amps with a resistance of 2.9 milliohms. It is an N-channel device and comes in a TO-220-3L package.

Applications: Electronic cigarettes, wireless chargers, motors, battery management systems, backup power sources, unmanned aerial vehicles, healthcare devices, electric vehicle charging equipment, control units, 3D printing machines, electronic devices, small home appliances, and consumer electronics.

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Product Detail

Application

Product Tags

General Description

The WSR200N08 is the highest performance trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The WSR200N08 meet the RoHS and Green Product requirement,100% EAS guaranteed with full function reliability approved.

Features

Advanced high cell density Trench technology, Super Low Gate Charge, Excellent CdV/dt effect decline,100% EAS Guaranteed, Green Device Available.

Applications

Switching application, Power Management for Inverter Systems, Electronic cigarettes, wireless charging, motors, BMS, emergency power supplies, drones, medical, car charging, controllers, 3D printers, digital products, small household appliances, consumer electronics, etc.

corresponding material number

AO AOT480L, ON FDP032N08B,ST STP130N8F7 STP140N8F7, TOSHIBA TK72A08N1 TK72E08N1, etc.

Important parameters

Electrical Characteristics (TJ=25℃, unless otherwise noted)

Symbol	Parameter	Rating	Units
VDS	Drain-Source Voltage	80	V
VGS	Gate-Source Voltage	±25	V
ID@TC=25℃	Continuous Drain Current, VGS @ 10V1	200	A
ID@TC=100℃	Continuous Drain Current, VGS @ 10V1	144	A
IDM	Pulsed Drain Current2,TC=25°C	790	A
EAS	Avalanche Energy, Single pulse,L=0.5mH	1496	mJ
IAS	Avalanche Current, Single pulse,L=0.5mH	200	A
PD@TC=25℃	Total Power Dissipation4	345	W
PD@TC=100℃	Total Power Dissipation4	173	W
TSTG	Storage Temperature Range	-55 to 175	℃
TJ	Operating Junction Temperature Range	175	℃

Symbol	Parameter	Conditions	Min.	Typ.	Max.	Unit
BVDSS	Drain-Source Breakdown Voltage	VGS=0V , ID=250uA	80	---	---	V
△BVDSS/△TJ	BVDSS Temperature Coefficient	Reference to 25℃, ID=1mA	---	0.096	---	V/℃
RDS(ON)	Static Drain-Source On-Resistance2	VGS=10V,ID=100A	---	2.9	3.5	mΩ
VGS(th)	Gate Threshold Voltage	VGS=VDS , ID =250uA	2.0	3.0	4.0	V
△VGS(th)	VGS(th) Temperature Coefficient	VGS=VDS , ID =250uA	---	-5.5	---	mV/℃
IDSS	Drain-Source Leakage Current	VDS=80V , VGS=0V , TJ=25℃	---	---	1	uA
IDSS	Drain-Source Leakage Current	VDS=80V , VGS=0V , TJ=55℃	---	---	10	uA
IGSS	Gate-Source Leakage Current	VGS=±25V , VDS=0V	---	---	±100	nA
Rg	Gate Resistance	VDS=0V , VGS=0V , f=1MHz	---	3.2	---	Ω
Qg	Total Gate Charge (10V)	VDS=80V , VGS=10V , ID=30A	---	197	---	nC
Qgs	Gate-Source Charge		---	31	---
Qgd	Gate-Drain Charge		---	75	---
Td(on)	Turn-On Delay Time	VDD=50V , VGS=10V ,RG=3Ω, ID=30A	---	28	---	ns
Tr	Rise Time		---	18	---
Td(off)	Turn-Off Delay Time		---	42	---
Tf	Fall Time		---	54	---
Ciss	Input Capacitance	VDS=15V , VGS=0V , f=1MHz	---	8154	---	pF
Coss	Output Capacitance		---	1029	---
Crss	Reverse Transfer Capacitance		---	650	---