WSR200N08 N-channel 80V 200A TO-220-3L WINSOK MOSFET
General Description
The WSR200N08 is the highest performance trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The WSR200N08 meet the RoHS and Green Product requirement,100% EAS guaranteed with full function reliability approved.
Features
Advanced high cell density Trench technology, Super Low Gate Charge, Excellent CdV/dt effect decline,100% EAS Guaranteed, Green Device Available.
Applications
Switching application, Power Management for Inverter Systems, Electronic cigarettes, wireless charging, motors, BMS, emergency power supplies, drones, medical, car charging, controllers, 3D printers, digital products, small household appliances, consumer electronics, etc.
corresponding material number
AO AOT480L, ON FDP032N08B,ST STP130N8F7 STP140N8F7, TOSHIBA TK72A08N1 TK72E08N1, etc.
Important parameters
Electrical Characteristics (TJ=25℃, unless otherwise noted)
| Symbol | Parameter | Rating | Units |
| VDS | Drain-Source Voltage | 80 | V |
| VGS | Gate-Source Voltage | ±25 | V |
| ID@TC=25℃ | Continuous Drain Current, VGS @ 10V1 | 200 | A |
| ID@TC=100℃ | Continuous Drain Current, VGS @ 10V1 | 144 | A |
| IDM | Pulsed Drain Current2,TC=25°C | 790 | A |
| EAS | Avalanche Energy, Single pulse,L=0.5mH | 1496 | mJ |
| IAS | Avalanche Current, Single pulse,L=0.5mH | 200 | A |
| PD@TC=25℃ | Total Power Dissipation4 | 345 | W |
| PD@TC=100℃ | Total Power Dissipation4 | 173 | W |
| TSTG | Storage Temperature Range | -55 to 175 | ℃ |
| TJ | Operating Junction Temperature Range | 175 | ℃ |
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 80 | --- | --- | V |
| △BVDSS/△TJ | BVDSS Temperature Coefficient | Reference to 25℃, ID=1mA | --- | 0.096 | --- | V/℃ |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=10V,ID=100A | --- | 2.9 | 3.5 | mΩ |
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 2.0 | 3.0 | 4.0 | V |
| △VGS(th) | VGS(th) Temperature Coefficient | --- | -5.5 | --- | mV/℃ | |
| IDSS | Drain-Source Leakage Current | VDS=80V , VGS=0V , TJ=25℃ | --- | --- | 1 | uA |
| VDS=80V , VGS=0V , TJ=55℃ | --- | --- | 10 | |||
| IGSS | Gate-Source Leakage Current | VGS=±25V , VDS=0V | --- | --- | ±100 | nA |
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | --- | 3.2 | --- | Ω |
| Qg | Total Gate Charge (10V) | VDS=80V , VGS=10V , ID=30A | --- | 197 | --- | nC |
| Qgs | Gate-Source Charge | --- | 31 | --- | ||
| Qgd | Gate-Drain Charge | --- | 75 | --- | ||
| Td(on) | Turn-On Delay Time | VDD=50V , VGS=10V ,RG=3Ω, ID=30A | --- | 28 | --- | ns |
| Tr | Rise Time | --- | 18 | --- | ||
| Td(off) | Turn-Off Delay Time | --- | 42 | --- | ||
| Tf | Fall Time | --- | 54 | --- | ||
| Ciss | Input Capacitance | VDS=15V , VGS=0V , f=1MHz | --- | 8154 | --- | pF |
| Coss | Output Capacitance | --- | 1029 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 650 | --- |
