WSR140N12 N-channel 120V 140A TO-220-3L WINSOK MOSFET

Model Number: WSR140N12

BVDSS: 120V

RDSON: 5mΩ

ID: 140A

Channel: N-channel

Package: TO-220-3L

Product Summery: The voltage of WSR140N12 MOSFET is 120V, the current is 140A, the resistance is 5mΩ, the channel is N-channel, and the package is TO-220-3L.

Applications: Power supply, medical, major appliances, BMS etc.

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Product Detail

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General Description

The WSR140N12 is the highest performance trench N-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The WSR140N12 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved.

Features

Advanced high cell density Trench technology, Super Low Gate Charge, Excellent CdV/dt effect decline, 100% EAS Guaranteed, Green Device Available.

Applications

High Frequency Point-of-Load Synchronous Buck Converter, Networking DC-DC Power System, Power supply, medical, major appliances, BMS etc.

corresponding material number

ST STP40NF12 etc.

Important parameters

Symbol	Parameter	Rating	Units
VDS	Drain-Source Voltage	120	V
VGS	Gate-Source Voltage	±20	V
ID	Continuous Drain Current, VGS @ 10V(TC=25℃)	140	A
IDM	Pulsed Drain Current	330	A
EAS	Single Pulse Avalanche Energy	400	mJ
PD	Total Power Dissipation... C=25℃)	192	W
RθJA	Thermal resistance, junction-ambient	62	℃/W
RθJC	Thermal resistance, junction-case	0.65	℃/W
TSTG	Storage Temperature Range	-55 to 150	℃
TJ	Operating Junction Temperature Range	-55 to 150	℃

Symbol	Parameter	Conditions	Min.	Typ.	Max.	Unit
BVDSS	Drain-Source Breakdown Voltage	VGS=0V , ID=250uA	120	---	---	V
RDS(ON)	Static Drain-Source On-Resistance2	VGS=10V , ID=30A	---	5.0	6.5	mΩ
VGS(th)	Gate Threshold Voltage	VGS=VDS , ID =250uA	2.0	---	4.0	V
IDSS	Drain-Source Leakage Current	VDS=120V , VGS=0V , TJ=25℃	---	---	1	uA
IGSS	Gate-Source Leakage Current	VGS=±20V , VDS=0V	---	---	±100	nA
Qg	Total Gate Charge	VDS=50V , VGS=10V , ID=15A	---	68.9	---	nC
Qgs	Gate-Source Charge		---	18.1	---
Qgd	Gate-Drain Charge		---	15.9	---
Td(on)	Turn-On Delay Time	VDD=50V , VGS=10VRG=2Ω,ID=25A	---	30.3	---	ns
Tr	Rise Time		---	33.0	---
Td(off)	Turn-Off Delay Time		---	59.5	---
Tf	Fall Time		---	11.7	---
Ciss	Input Capacitance	VDS=50V , VGS=0V , f=1MHz	---	5823	---	pF
Coss	Output Capacitance		---	778.3	---
Crss	Reverse Transfer Capacitance		---	17.5	---

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