WSP6067A N&P-Channel 60V/-60V 7A/-5A SOP-8 WINSOK MOSFET

Model Number: WSP6067A

BVDSS: 60V/-60V

RDSON: 38mΩ/80mΩ

ID: 7A/-5A

Channel: N&P-Channel

Package: SOP-8

Product Summery: The WSP6067A MOSFET has a voltage range of 60 volts positive and negative, a current range of 7 amps positive and 5 amps negative, a resistance range of 38 milliohms and 80 milliohms, an N&P-Channel, and is packaged in SOP-8.

Applications: E-cigarettes, wireless chargers, engines, drones, healthcare, car chargers, controls, digital devices, small appliances, and electronics for consumers.

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Product Detail

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General Description

The WSP6067A MOSFETs are the most advanced for trench P-ch technology, with a very high density of cells. They deliver excellent performance in terms of both the RDSON and gate charge, suitable for most synchronous buck converters. These MOSFETs meet RoHS and Green Product criteria, with 100% EAS guaranteeing full functional reliability.

Features

Advanced technology enables high-density cell trench formation, resulting in super low gate charge and superior CdV/dt effect decay. Our devices come with a 100% EAS warranty and are environmentally friendly.

Applications

High Frequency Point-of-Load Synchronous Buck Converter, Networking DC-DC Power System, Load Switch, E-cigarettes, wireless charging, motors, drones, medical equipment, car chargers, controllers, electronic devices, small home appliances, and consumer electronics.

corresponding material number

AOS

Important parameters

Symbol	Parameter	Rating		Units
Symbol	Parameter	N-Channel	P-Channel	Units
VDS	Drain-Source Voltage	60	-60	V
VGS	Gate-Source Voltage	±20	±20	V
ID@TC=25℃	Continuous Drain Current, VGS @ 10V1	7.0	-5.0	A
ID@TC=100℃	Continuous Drain Current, VGS @ 10V1	4.0	-2.5	A
IDM	Pulsed Drain Current2	28	-20	A
EAS	Single Pulse Avalanche Energy3	22	28	mJ
IAS	Avalanche Current	21	-24	A
PD@TC=25℃	Total Power Dissipation4	2.0	2.0	W
TSTG	Storage Temperature Range	-55 to 150	-55 to 150	℃
TJ	Operating Junction Temperature Range	-55 to 150	-55 to 150	℃

Symbol	Parameter	Conditions	Min.	Typ.	Max.	Unit
BVDSS	Drain-Source Breakdown Voltage	VGS=0V , ID=250uA	60	---	---	V
△BVDSS/△TJ	BVDSS Temperature Coefficient	Reference to 25℃ , ID=1mA	---	0.063	---	V/℃
RDS(ON)	Static Drain-Source On-Resistance2	VGS=10V , ID=5A	---	38	52	mΩ
RDS(ON)	Static Drain-Source On-Resistance2	VGS=4.5V , ID=4A	---	55	75	mΩ
VGS(th)	Gate Threshold Voltage	VGS=VDS , ID =250uA	1	2	3	V
△VGS(th)	VGS(th) Temperature Coefficient	VGS=VDS , ID =250uA	---	-5.24	---	mV/℃
IDSS	Drain-Source Leakage Current	VDS=48V , VGS=0V , TJ=25℃	---	---	1	uA
IDSS	Drain-Source Leakage Current	VDS=48V , VGS=0V , TJ=55℃	---	---	5	uA
IGSS	Gate-Source Leakage Current	VGS=±20V , VDS=0V	---	---	±100	nA
gfs	Forward Transconductance	VDS=5V , ID=4A	---	28	---	S
Rg	Gate Resistance	VDS=0V , VGS=0V , f=1MHz	---	2.8	4.3	Ω
Qg	Total Gate Charge (4.5V)	VDS=48V , VGS=4.5V , ID=4A	---	19	25	nC
Qgs	Gate-Source Charge		---	2.6	---
Qgd	Gate-Drain Charge		---	4.1	---
Td(on)	Turn-On Delay Time	VDD=30V , VGS=10V , RG=3.3Ω, ID=1A	---	3	---	ns
Tr	Rise Time		---	34	---
Td(off)	Turn-Off Delay Time		---	23	---
Tf	Fall Time		---	6	---
Ciss	Input Capacitance	VDS=15V , VGS=0V , f=1MHz	---	1027	---	pF
Coss	Output Capacitance		---	65	---
Crss	Reverse Transfer Capacitance		---	45	---

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