WSP4888 Dual N-Channel 30V 9.8A SOP-8 WINSOK MOSFET
General Description
The WSP4888 is a high-performing transistor with a dense cell structure, ideal for use in synchronous buck converters. It boasts excellent RDSON and gate charges, making it a top choice for these applications. Additionally, the WSP4888 meets both RoHS and Green Product requirements and comes with a 100% EAS guarantee for reliable function.
Features
Advanced Trench Technology features high cell density and super low gate charge, significantly reducing the CdV/dt effect. Our devices come with a 100% EAS guarantee and environmentally friendly options.
Our MOSFETs undergo strict quality control measures to ensure they meet the highest industry standards. Each unit is thoroughly tested for performance, durability and reliability, ensuring a long product life. Its rugged design enables it to withstand extreme working conditions, ensuring uninterrupted equipment functionality.
Competitive pricing: Despite their superior quality, our MOSFETs are highly competitively priced, providing significant cost savings without compromising performance. We believe that all consumers should have access to high-quality products, and our pricing strategy reflects this commitment.
Broad compatibility: Our MOSFETs are compatible with a variety of electronic systems, making them a versatile choice for manufacturers and end-users. It integrates seamlessly into existing systems, enhancing overall performance without requiring major design modifications.
Applications
High Frequency Point-of-Load Synchronous Buck Converter for use in MB/NB/UMPC/VGA systems, Networking DC-DC Power Systems, Load Switches, E-cigarettes, Wireless Chargers, Motors, Drones, Medical equipment, Car Chargers, Controllers, Digital Products, Small Home Appliances, and Consumer Electronics.
corresponding material number
AOS AO4832 AO4838 AO4914,ON NTMS4916N,VISHAY Si4128DY,INFINEON BSO150N03MD G,Sinopower SM4803DSK,dintek DTM4926 DTM4936,ruichips RU30D10H
Important parameters
Symbol | Parameter | Rating | Units |
VDS | Drain-Source Voltage | 30 | V |
VGS | Gate-Source Voltage | ±20 | V |
ID@TC=25℃ | Continuous Drain Current, VGS @ 10V1 | 9.8 | A |
ID@TC=70℃ | Continuous Drain Current, VGS @ 10V1 | 8.0 | A |
IDM | Pulsed Drain Current2 | 45 | A |
EAS | Single Pulse Avalanche Energy3 | 25 | mJ |
IAS | Avalanche Current | 12 | A |
PD@TA=25℃ | Total Power Dissipation4 | 2.0 | W |
TSTG | Storage Temperature Range | -55 to 150 | ℃ |
TJ | Operating Junction Temperature Range | -55 to 150 | ℃ |
Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 30 | --- | --- | V |
△BVDSS/△TJ | BVDSS Temperature Coefficient | Reference to 25℃ , ID=1mA | --- | 0.034 | --- | V/℃ |
RDS(ON) | Static Drain-Source On-Resistance2 | VGS=10V , ID=8.5A | --- | 13.5 | 18 | mΩ |
VGS=4.5V , ID=5A | --- | 18 | 25 | |||
VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.5 | 1.8 | 2.5 | V |
△VGS(th) | VGS(th) Temperature Coefficient | --- | -5.8 | --- | mV/℃ | |
IDSS | Drain-Source Leakage Current | VDS=24V , VGS=0V , TJ=25℃ | --- | --- | 1 | uA |
VDS=24V , VGS=0V , TJ=55℃ | --- | --- | 5 | |||
IGSS | Gate-Source Leakage Current | VGS=±20V , VDS=0V | --- | --- | ±100 | nA |
gfs | Forward Transconductance | VDS=5V , ID=8A | --- | 9 | --- | S |
Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | --- | 1.8 | 2.9 | Ω |
Qg | Total Gate Charge (4.5V) | VDS=15V , VGS=4.5V , ID=8.8A | --- | 6 | 8.4 | nC |
Qgs | Gate-Source Charge | --- | 1.5 | --- | ||
Qgd | Gate-Drain Charge | --- | 2.5 | --- | ||
Td(on) | Turn-On Delay Time | VDD=15V , VGEN=10V , RG=6Ω
ID=1A,RL=15Ω |
--- | 7.5 | 9.8 | ns |
Tr | Rise Time | --- | 9.2 | 19 | ||
Td(off) | Turn-Off Delay Time | --- | 19 | 34 | ||
Tf | Fall Time | --- | 4.2 | 8 | ||
Ciss | Input Capacitance | VDS=15V , VGS=0V , f=1MHz | --- | 590 | 701 | pF |
Coss | Output Capacitance | --- | 98 | 112 | ||
Crss | Reverse Transfer Capacitance | --- | 59 | 91 |