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WSP4888 Dual N-Channel 30V 9.8A SOP-8 WINSOK MOSFET

WSP4888 Dual N-Channel 30V 9.8A SOP-8 WINSOK MOSFET

WSP4888 Dual N-Channel 30V 9.8A SOP-8 WINSOK MOSFET Featured Image
  • WSP4888 Dual N-Channel 30V 9.8A SOP-8 WINSOK MOSFET

short description:


  • Model Number: WSP4888
  • BVDSS: 30V
  • RDSON: 13.5mΩ
  • ID: 9.8A
  • Channel: Dual N-Channel
  • Package: SOP-8
  • Product Summery: The voltage of WSP4888 MOSFET is 30V, the current is 9.8A, the resistance is 13.5mΩ, the channel is Dual N-Channel, and the package is SOP-8.
  • Applications: E-cigarettes, wireless chargers, engines, drones, healthcare, car chargers, controls, digital devices, small appliances, and electronics for consumers.
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    Product Detail

    Application

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    General Description

    The WSP4888 is a high-performing transistor with a dense cell structure, ideal for use in synchronous buck converters. It boasts excellent RDSON and gate charges, making it a top choice for these applications. Additionally, the WSP4888 meets both RoHS and Green Product requirements and comes with a 100% EAS guarantee for reliable function.

    Features

    Advanced Trench Technology features high cell density and super low gate charge, significantly reducing the CdV/dt effect. Our devices come with a 100% EAS guarantee and environmentally friendly options.

    Our MOSFETs undergo strict quality control measures to ensure they meet the highest industry standards. Each unit is thoroughly tested for performance, durability and reliability, ensuring a long product life. Its rugged design enables it to withstand extreme working conditions, ensuring uninterrupted equipment functionality.

    Competitive pricing: Despite their superior quality, our MOSFETs are highly competitively priced, providing significant cost savings without compromising performance. We believe that all consumers should have access to high-quality products, and our pricing strategy reflects this commitment.

    Broad compatibility: Our MOSFETs are compatible with a variety of electronic systems, making them a versatile choice for manufacturers and end-users. It integrates seamlessly into existing systems, enhancing overall performance without requiring major design modifications.

    Applications

    High Frequency Point-of-Load Synchronous Buck Converter for use in MB/NB/UMPC/VGA systems, Networking DC-DC Power Systems, Load Switches, E-cigarettes, Wireless Chargers, Motors, Drones, Medical equipment, Car Chargers, Controllers, Digital Products, Small Home Appliances, and Consumer Electronics.

    corresponding material number

    AOS AO4832 AO4838 AO4914,ON NTMS4916N,VISHAY Si4128DY,INFINEON BSO150N03MD G,Sinopower SM4803DSK,dintek DTM4926 DTM4936,ruichips RU30D10H

    Important parameters

    Symbol Parameter Rating Units
    VDS Drain-Source Voltage 30 V
    VGS Gate-Source Voltage ±20 V
    ID@TC=25℃ Continuous Drain Current, VGS @ 10V1 9.8 A
    ID@TC=70℃ Continuous Drain Current, VGS @ 10V1 8.0 A
    IDM Pulsed Drain Current2 45 A
    EAS Single Pulse Avalanche Energy3 25 mJ
    IAS Avalanche Current 12 A
    PD@TA=25℃ Total Power Dissipation4 2.0 W
    TSTG Storage Temperature Range -55 to 150 ℃
    TJ Operating Junction Temperature Range -55 to 150 ℃
    Symbol Parameter Conditions Min. Typ. Max. Unit
    BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 30 --- --- V
    △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA --- 0.034 --- V/℃
    RDS(ON) Static Drain-Source On-Resistance2 VGS=10V , ID=8.5A --- 13.5 18 mΩ
           
        VGS=4.5V , ID=5A --- 18 25  
    VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1.5 1.8 2.5 V
               
    △VGS(th) VGS(th) Temperature Coefficient   --- -5.8 --- mV/℃
    IDSS Drain-Source Leakage Current VDS=24V , VGS=0V , TJ=25℃ --- --- 1 uA
           
        VDS=24V , VGS=0V , TJ=55℃ --- --- 5  
    IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA
    gfs Forward Transconductance VDS=5V , ID=8A --- 9 --- S
    Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 1.8 2.9 Ω
    Qg Total Gate Charge (4.5V) VDS=15V , VGS=4.5V , ID=8.8A --- 6 8.4 nC
    Qgs Gate-Source Charge --- 1.5 ---
    Qgd Gate-Drain Charge --- 2.5 ---
    Td(on) Turn-On Delay Time VDD=15V , VGEN=10V , RG=6Ω

    ID=1A,RL=15Ω

    		 --- 7.5 9.8 ns
    Tr Rise Time --- 9.2 19
    Td(off) Turn-Off Delay Time --- 19 34
    Tf Fall Time --- 4.2 8
    Ciss Input Capacitance VDS=15V , VGS=0V , f=1MHz --- 590 701 pF
    Coss Output Capacitance --- 98 112
    Crss Reverse Transfer Capacitance --- 59 91
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