WSP4447 P-Channel -40V -11A SOP-8 WINSOK MOSFET

short description:

Model Number: WSP4447

BVDSS: -40V

RDSON: 13mΩ

ID: -11A

Channel: P-Channel

Package: SOP-8

Product Summery: The voltage of WSP4447 MOSFET is -40V, the current is -11A, the resistance is 13mΩ, the channel is P-Channel, and the package is SOP-8.

Applications: Electronic cigarettes, wireless chargers, motors, drones, medical devices, auto chargers, controllers, digital products, small appliances, and consumer electronics.

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Product Detail

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General Description

The WSP4447 is a top-performing MOSFET that utilizes trench technology and has a high cell density. It offers excellent RDSON and gate charge, making it suitable for use in most synchronous buck converter applications. The WSP4447 meets RoHS and Green Product standards, and comes with 100% EAS guarantee for full reliability.

Features

Advanced Trench technology allows for higher cell density, resulting in a Green Device with Super Low Gate Charge and excellent CdV/dt effect decline.

Applications

High Frequency Converter for a Variety of Electronics
This converter is designed to efficiently power a wide range of devices, including laptops, gaming consoles, networking equipment, e-cigarettes, wireless chargers, motors, drones, medical devices, car chargers, controllers, digital products, small home appliances, and consumer electronics.

corresponding material number

AOS AO4425 AO4485,ON FDS4675,VISHAY Si4401FDY,ST STS10P4LLF6,TOSHIBA TPC8133,PANJIT PJL9421，Sinopower SM4403PSK，RUICHIPS RU40L10H.

Important parameters

Symbol	Parameter	Rating	Units
VDS	Drain-Source Voltage	-40	V
VGS	Gate-Source Voltage	±20	V
ID@TA=25℃	Continuous Drain Current, VGS @ -10V1	-11	A
ID@TA=70℃	Continuous Drain Current, VGS @ -10V1	-9.0	A
IDM a	300µs Pulsed Drain Current (VGS=-10V)	-44	A
EAS b	Avalanche Energy, Single pulse (L=0.1mH)	54	mJ
IAS b	Avalanche Current, Single pulse (L=0.1mH)	-33	A
PD@TA=25℃	Total Power Dissipation4	2.0	W
TSTG	Storage Temperature Range	-55 to 150	℃
TJ	Operating Junction Temperature Range	-55 to 150	℃

Symbol	Parameter	Conditions	Min.	Typ.	Max.	Unit
BVDSS	Drain-Source Breakdown Voltage	VGS=0V , ID=-250uA	-40	---	---	V
△BVDSS/△TJ	BVDSS Temperature Coefficient	Reference to 25℃ , ID=-1mA	---	-0.018	---	V/℃
RDS(ON)	Static Drain-Source On-Resistance2	VGS=-10V , ID=-13A	---	13	16	mΩ
RDS(ON)	Static Drain-Source On-Resistance2					mΩ
		VGS=-4.5V , ID=-5A	---	18	26
VGS(th)	Gate Threshold Voltage	VGS=VDS , ID =-250uA	-1.4	-1.9	-2.4	V
		VGS=VDS , ID =-250uA
△VGS(th)	VGS(th) Temperature Coefficient		---	5.04	---	mV/℃
IDSS	Drain-Source Leakage Current	VDS=-32V , VGS=0V , TJ=25℃	---	---	-1	uA
IDSS	Drain-Source Leakage Current					uA
		VDS=-32V , VGS=0V , TJ=55℃	---	---	-5
IGSS	Gate-Source Leakage Current	VGS=±20V , VDS=0V	---	---	±100	nA
gfs	Forward Transconductance	VDS=-5V , ID=-10A	---	18	---	S
Qg	Total Gate Charge (-4.5V)	VDS=-20V , VGS=-10V , ID=-11A	---	32	---	nC
Qgs	Gate-Source Charge		---	5.2	---
Qgd	Gate-Drain Charge		---	8	---
Td(on)	Turn-On Delay Time	VDD=-20V , VGS=-10V , RG=6Ω, ID=-1A ,RL=20Ω	---	14	---	ns
Tr	Rise Time		---	12	---
Td(off)	Turn-Off Delay Time		---	41	---
Tf	Fall Time		---	22	---
Ciss	Input Capacitance	VDS=-15V , VGS=0V , f=1MHz	---	1500	---	pF
Coss	Output Capacitance		---	235	---
Crss	Reverse Transfer Capacitance		---	180	---