WSP4099 Dual P-Channel -40V -6.5A SOP-8 WINSOK MOSFET

short description:

Model Number: WSP4099

BVDSS: -40V

RDSON: 30mΩ

ID: -6.5A

Channel: Dual P-Channel

Package: SOP-8

Product Summery: The WSP4099 MOSFET has a voltage of -40V, a current of -6.5A, a resistance of 30mΩ, a Dual P-Channel, and comes in a SOP-8 package.

Applications: Electronic cigarettes, wireless charging, motors, drones, medical, auto chargers, controllers, digital products, small appliances, consumer electronics.

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Product Detail

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General Description

The WSP4099 is a powerful trench P-ch MOSFET with a high cell density. It delivers excellent RDSON and gate charge, making it suitable for most synchronous buck converter applications. It meets RoHS and GreenProduct standards and has 100% EAS guarantee with full function reliability approval.

Features

Advanced Trench Technology with high cell density, ultra-low gate charge, excellent CdV/dt effect decay and a 100% EAS guarantee are all features of our green devices that are readily available.

Applications

High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA, Networking DC-DC Power System, Load Switch, E-cigarettes, wireless charging, motors, drones, medical care, car chargers, controllers, digital products, small home appliances, and consumer electronics.

corresponding material number

ON FDS4685,VISHAY Si4447ADY,TOSHIBA TPC8227-H,PANJIT PJL9835A，Sinopower SM4405BSK,dintek DTM4807 ,ruichips RU40S4H.

Important parameters

Symbol	Parameter	Rating	Units
VDS	Drain-Source Voltage	-40	V
VGS	Gate-Source Voltage	±20	V
ID@TC=25℃	Continuous Drain Current, -VGS @ -10V1	-6.5	A
ID@TC=100℃	Continuous Drain Current, -VGS @ -10V1	-4.5	A
IDM	Pulsed Drain Current2	-22	A
EAS	Single Pulse Avalanche Energy3	25	mJ
IAS	Avalanche Current	-10	A
PD@TC=25℃	Total Power Dissipation4	2.0	W
TSTG	Storage Temperature Range	-55 to 150	℃
TJ	Operating Junction Temperature Range	-55 to 150	℃

Symbol	Parameter	Conditions	Min.	Typ.	Max.	Unit
BVDSS	Drain-Source Breakdown Voltage	VGS=0V , ID=-250uA	-40	---	---	V
△BVDSS/△TJ	BVDSS Temperature Coefficient	Reference to 25℃ , ID=-1mA	---	-0.02	---	V/℃
RDS(ON)	Static Drain-Source On-Resistance2	VGS=-10V , ID=-6.5A	---	30	38	mΩ
RDS(ON)	Static Drain-Source On-Resistance2	VGS=-4.5V , ID=-4.5A	---	46	62	mΩ
VGS(th)	Gate Threshold Voltage	VGS=VDS , ID =-250uA	-1.5	-2.0	-2.5	V
△VGS(th)	VGS(th) Temperature Coefficient	VGS=VDS , ID =-250uA	---	3.72	---	V/℃
IDSS	Drain-Source Leakage Current	VDS=-32V , VGS=0V , TJ=25℃	---	---	1	uA
IDSS	Drain-Source Leakage Current	VDS=-32V , VGS=0V , TJ=55℃	---	---	5	uA
IGSS	Gate-Source Leakage Current	VGS=±20V , VDS=0V	---	---	±100	nA
gfs	Forward Transconductance	VDS=-5V , ID=-4A	---	8	---	S
Qg	Total Gate Charge (-4.5V)	VDS=-20V , VGS=-4.5V , ID=-6.5A	---	7.5	---	nC
Qgs	Gate-Source Charge		---	2.4	---
Qgd	Gate-Drain Charge		---	3.5	---
Td(on)	Turn-On Delay Time	VDD=-15V , VGS=-10V , RG=6Ω, ID=-1A ,RL=20Ω	---	8.7	---	ns
Tr	Rise Time		---	7	---
Td(off)	Turn-Off Delay Time		---	31	---
Tf	Fall Time		---	17	---
Ciss	Input Capacitance	VDS=-15V , VGS=0V , f=1MHz	---	668	---	pF
Coss	Output Capacitance		---	98	---
Crss	Reverse Transfer Capacitance		---	72	---