WSP4088 N-channel 40V 11A SOP-8 WINSOK MOSFET

Model Number: WSP4088

BVDSS: 40V

RDSON: 13mΩ

ID: 11A

Channel: N-channel

Package: SOP-8

Product Summery: The voltage of WSP4088 MOSFET is 40V, the current is 11A, the resistance is 13mΩ, the channel is N-channel, and the package is SOP-8.

Applications: Electronic cigarettes, wireless charging, motors, drones, medical, car charging, controllers, digital products, small household appliances, consumer electronics, etc

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Product Detail

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General Description

The WSP4088 is the highest performance trench N-channel MOSFET with very high cell density providing excellent RDSON and gate charge for most synchronous buck converter applications. WSP4088 complies with RoHS and green product requirements, 100% EAS guarantee, full function reliability approved.

Features

Reliable and Rugged,Lead Free and Green Devices Available

Applications

Power Management in Desktop Computer or DC/DC Converters,Electronic cigarettes, wireless charging, motors, drones, medical, car charging, controllers, digital products, small household appliances, consumer electronics, etc

corresponding material number

AO AO4884 AO4882,ON FDS4672A,PANJIT PJL9424,DINTEK DTM4916 etc.

Important parameters

Absolute Maximum Ratings (TA = 25 C Unless Otherwise Noted)

Symbol	Parameter		Rating	Unit
Common Ratings
VDSS	Drain-Source Voltage		40	V
VGSS	Gate-Source Voltage		±20	V
TJ	Maximum Junction Temperature		150	°C
TSTG	Storage Temperature Range		-55 to 150	°C
IS	Diode Continuous Forward Current	TA=25°C	2	A
ID	Continuous Drain Current	TA=25°C	11	A
ID	Continuous Drain Current	TA=70°C	8.4
IDM a	Pulsed Drain Current	TA=25°C	30
PD	Maximum Power Dissipation	TA=25°C	2.08	W
PD	Maximum Power Dissipation	TA=70°C	1.3	W
RqJA	Thermal Resistance-Junction to Ambient	t £ 10s	30	°C/W
RqJA	Thermal Resistance-Junction to Ambient	Steady State	60
RqJL	Thermal Resistance-Junction to Lead	Steady State	20
IAS b	Avalanche Current, Single pulse	L=0.1mH	23	A
EAS b	Avalanche Energy, Single pulse	L=0.1mH	26	mJ

Note a: Max. current is limited by bonding wire.
Note b: UIS tested and pulse width limited by maximum junction temperature 150oC (initial temperature Tj=25oC).

Electrical Characteristics (TA = 25 C Unless Otherwise Noted)

Symbol	Parameter	Test Conditions		Min.	Typ.	Max.	Unit
Static Characteristics
BVDSS	Drain-Source Breakdown Voltage	VGS=0V, IDS=250mA		40	-	-	V
IDSS	Zero Gate Voltage Drain Current	VDS=32V, VGS=0V		-	-	1	mA
IDSS	Zero Gate Voltage Drain Current		TJ=85°C	-	-	30	mA
VGS(th)	Gate Threshold Voltage	VDS=VGS, IDS=250mA		1.5	1.8	2.5	V
IGSS	Gate Leakage Current	VGS=±20V, VDS=0V		-	-	±100	nA
RDS(ON) c	Drain-Source On-state Resistance	VGS=10V, IDS=7A		-	10.5	13	mW
			TJ=125°C	-	15.75	-
		VGS=4.5V, IDS=5A		-	12	16
Gfs	Forward Transconductance	VDS=5V, IDS=15A		-	31	-	S
Diode Characteristics
VSD c	Diode Forward Voltage	ISD=10A, VGS=0V		-	0.9	1.1	V
trr	Reverse Recovery Time	VDD=20V,ISD=10A, dlSD/dt=100A/ms		-	15.2	-	ns
ta	Charge Time			-	9.4	-
tb	Discharge Time			-	5.8	-
Qrr	Reverse Recovery Charge			-	9.5	-	nC
Dynamic Characteristics d
RG	Gate Resistance	VGS=0V,VDS=0V,F=1MHz		0.7	1.1	1.8	W
Ciss	Input Capacitance	VGS=0V,VDS=20V,Frequency=1.0MHz		-	1125	-	pF
Coss	Output Capacitance			-	132	-
Crss	Reverse Transfer Capacitance			-	70	-
td(ON)	Turn-on Delay Time	VDD=20V, RL=20W,IDS=1A, VGEN=10V, RG=1W		-	12.6	-	ns
tr	Turn-on Rise Time			-	10	-
td(OFF)	Turn-off Delay Time			-	23.6	-
tf	Turn-off Fall Time			-	6	-
Gate Charge Characteristics d
Qg	Total Gate Charge	VDS=20V, VGS=4.5V, IDS=7A		-	9.4	-	nC
Qg	Total Gate Charge	VDS=20V, VGS=10V, IDS=7A		-	20	28
Qgth	Threshold Gate Charge			-	2	-
Qgs	Gate-Source Charge			-	3.9	-
Qgd	Gate-Drain Charge			-	3	-

Note c:
Pulse test ; pulse width£300ms, duty cycle£2%.

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