WSP4016 N-channel 40V 15.5A SOP-8 WINSOK MOSFET

short description:

Model Number: WSP4016

BVDSS: 40V

RDSON: 11.5mΩ

ID: 15.5A

Channel: N-channel

Package: SOP-8

Product Summery: The voltage of WSP4016 MOSFET is 40V, the current is 15.5A, the resistance is 11.5mΩ , the channel is N-channel, and the package is SOP-8.

Applications: Automotive electronics, LED lights, audio, digital products, small household appliances, consumer electronics, protection boards, etc

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Product Detail

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General Description

The WSP4016 is the highest performance trench N-ch MOSFET with extreme high cell density,which provide excellent RDSON and gate chargens for most of the synchronous buck converter applications . The WSP4016 meet the RoHS and Green Product requirement,100% EAS guaranteed with full function reliability approved.

Features

Advanced high cell density Trench technology, Super Low Gate Charge ,Excellent CdV/dt effect decline ,100% EAS Guaranteed ,Green Device Available.

Applications

White LED boost converters ,Automotive Systems ,Industrial DC/DC Conversion Circuits, EAutomotive electronics, LED lights, audio, digital products, small household appliances, consumer electronics, protection boards, etc.

corresponding material number

AO AOSP66406, ON FDS8842NZ, VISHAY Si4840BDY, PANJIT PJL9420, Sinopower SM4037NHK, NIKO PV608BA,
DINTEK DTM5420.

Important parameters

Symbol	Parameter	Rating	Units
VDS	Drain-Source Voltage	40	V
VGS	Gate-Source Voltage	±20	V
ID@TC=25℃	Continuous Drain Current, VGS @ 10V1	15.5	A
ID@TC=70℃	Continuous Drain Current, VGS @ 10V1	8.4	A
IDM	Pulsed Drain Current2	30	A
PD@TA=25℃	Total Power Dissipation TA=25°C	2.08	W
PD@TA=70℃	Total Power Dissipation TA=70°C	1.3	W
TSTG	Storage Temperature Range	-55 to 150	℃
TJ	Operating Junction Temperature Range	-55 to 150	℃

Electrical Characteristics (TJ=25 ℃, unless otherwise noted)

Symbol	Parameter	Conditions	Min.	Typ.	Max.	Unit
BVDSS	Drain-Source Breakdown Voltage	VGS=0V , ID=250uA	40	---	---	V
RDS(ON)	Static Drain-Source On-Resistance2	VGS=10V , ID=7A	---	8.5	11.5	mΩ
RDS(ON)	Static Drain-Source On-Resistance2	VGS=4.5V , ID=5A	---	11	14.5	mΩ
VGS(th)	Gate Threshold Voltage	VGS=VDS , ID =250uA	1.0	1.8	2.5	V
IDSS	Drain-Source Leakage Current	VDS=32V , VGS=0V , TJ=25℃	---	---	1	uA
IDSS	Drain-Source Leakage Current	VDS=32V , VGS=0V , TJ=55℃	---	---	25	uA
IGSS	Gate-Source Leakage Current	VGS=±20V , VDS=0V	---	---	±100	nA
gfs	Forward Transconductance	VDS=5V , ID=15A	---	31	---	S
Qg	Total Gate Charge (4.5V)	VDS=20V ,VGS=10V ,ID=7A	---	20	30	nC
Qgs	Gate-Source Charge		---	3.9	---
Qgd	Gate-Drain Charge		---	3	---
Td(on)	Turn-On Delay Time	VDD=20V,VGEN=10V,RG=1Ω, ID=1A, RL=20Ω.	---	12.6	---	ns
Tr	Rise Time		---	10	---
Td(off)	Turn-Off Delay Time		---	23.6	---
Tf	Fall Time		---	6	---
Ciss	Input Capacitance	VDS=20V , VGS=0V , f=1MHz	---	1125	---	pF
Coss	Output Capacitance		---	132	---
Crss	Reverse Transfer Capacitance		---	70	---