WSM340N10G N-channel 100V 340A TOLL-8L WINSOK MOSFET

short description:

Model Number: WSM340N10G

BVDSS: 100V

RDSON: 1.6mΩ

ID: 340A

Channel: N-channel

Package: TOLL-8L

Product Summery: The voltage of WSM340N10G MOSFET is 100V, the current is 340A, the resistance is 1.6mΩ, the channel is N-channel, and the package is TOLL-8L.

Applications: Medical equipment, drones, PD power supplies, LED power supplies, industrial equipment, etc.

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Product Detail

Application

Product Tags

General Description

The WSM340N10G is the highest performance trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The WSM340N10G meet the RoHS and Green Product requirement,100% EAS guaranteed with full function reliability approved.

Features

Advanced high cell density Trench technology , Super Low Gate Charge , Excellent CdV/dt effect decline , 100% EAS Guaranteed , Green Device Available.

Applications

Synchronous rectification , DC/DC Converter , Load switch , Medical equipment, drones, PD power supplies, LED power supplies, industrial equipment, etc.

Important parameters

Absolute Maximum Ratings

Symbol	Parameter	Rating	Units
VDS	Drain-Source Voltage	100	V
VGS	Gate-Source Voltage	±20	V
ID@TC=25℃	Continuous Drain Current, VGS @ 10V	340	A
ID@TC=100℃	Continuous Drain Current, VGS @ 10V	230	A
IDM	Pulsed Drain Current..TC=25°C	1150	A
EAS	Avalanche Energy, Single pulse,L=0.5mH	1800	mJ
IAS	Avalanche Current, Single pulse,L=0.5mH	120	A
PD@TC=25℃	Total Power Dissipation	375	W
PD@TC=100℃	Total Power Dissipation	187	W
TSTG	Storage Temperature Range	-55 to 175	℃
TJ	Operating Junction Temperature Range	175	℃

Electrical Characteristics (TJ=25℃, unless otherwise noted)

Symbol	Parameter	Conditions	Min.	Typ.	Max.	Unit
BVDSS	Drain-Source Breakdown Voltage	VGS=0V , ID=250uA	100	---	---	V
△BVDSS/△TJ	BVDSS Temperature Coefficient	Reference to 25℃, ID=1mA	---	0.096	---	V/℃
RDS(ON)	Static Drain-Source On-Resistance	VGS=10V,ID=50A	---	1.6	2.3	mΩ
VGS(th)	Gate Threshold Voltage	VGS=VDS , ID =250uA	2.0	3.0	4.0	V
△VGS(th)	VGS(th) Temperature Coefficient	VGS=VDS , ID =250uA	---	-5.5	---	mV/℃
IDSS	Drain-Source Leakage Current	VDS=85V , VGS=0V , TJ=25℃	---	---	1	uA
IDSS	Drain-Source Leakage Current	VDS=85V , VGS=0V , TJ=55℃	---	---	10	uA
IGSS	Gate-Source Leakage Current	VGS=±25V , VDS=0V	---	---	±100	nA
Rg	Gate Resistance	VDS=0V , VGS=0V , f=1MHz	---	1.0	---	Ω
Qg	Total Gate Charge (10V)	VDS=50V , VGS=10V , ID=50A	---	260	---	nC
Qgs	Gate-Source Charge		---	80	---
Qgd	Gate-Drain Charge		---	60	---
Td(on)	Turn-On Delay Time	VDD=50V , VGS=10V ,RG=1Ω,RL=1Ω,IDS=1A.	---	88	---	ns
Tr	Rise Time		---	50	---
Td(off)	Turn-Off Delay Time		---	228	---
Tf	Fall Time		---	322	---
Ciss	Input Capacitance	VDS=40V , VGS=0V , f=1MHz	---	13900	---	pF
Coss	Output Capacitance		---	6160	---
Crss	Reverse Transfer Capacitance		---	220	---