WSM320N04G N-channel 40V 320A TOLL-8L WINSOK MOSFET

short description:

Model Number: WSM320N04G

BVDSS: 40V

RDSON: 1.2mΩ

ID: 320A

Channel: N-channel

Package: TOLL-8L

Product Summery: The WSM320N04G MOSFET has a voltage of 40V, a current of 320A, a resistance of 1.2mΩ, a N-channel, and a TOLL-8L package.

Applications: Electronic cigarettes, wireless charging, drones, medical, car charging, controllers, digital products, small household appliances, consumer electronics.

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Product Detail

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General Description

The WSM320N04G is a high-performance MOSFET that uses a trench design and has a very high cell density. It has excellent RDSON and gate charge and is suitable for most synchronous buck converter applications. The WSM320N04G meets RoHS and Green Product requirements and is guaranteed to have 100% EAS and full function reliability.

Features

Advanced high cell density Trench technology, while also featuring a low gate charge for optimal performance. Additionally, it boasts an excellent CdV/dt effect decline, a 100% EAS Guarantee and an eco-friendly option.

Applications

High Frequency Point-of-Load Synchronous Buck Converter, Networking DC-DC Power System, Power Tool Application, Electronic cigarettes, wireless charging, drones, medical, car charging, controllers, digital products, small household appliances, and consumer electronics.

Important parameters

Symbol	Parameter	Rating	Units
VDS	Drain-Source Voltage	40	V
VGS	Gate-Source Voltage	±20	V
ID@TC=25℃	Continuous Drain Current, VGS @ 10V1,7	320	A
ID@TC=100℃	Continuous Drain Current, VGS @ 10V1,7	192	A
IDM	Pulsed Drain Current2	900	A
EAS	Single Pulse Avalanche Energy3	980	mJ
IAS	Avalanche Current	70	A
PD@TC=25℃	Total Power Dissipation4	250	W
TSTG	Storage Temperature Range	-55 to 175	℃
TJ	Operating Junction Temperature Range	-55 to 175	℃

Symbol	Parameter	Conditions	Min.	Typ.	Max.	Unit
BVDSS	Drain-Source Breakdown Voltage	VGS=0V , ID=250uA	40	---	---	V
△BVDSS/△TJ	BVDSS Temperature Coefficient	Reference to 25℃, ID=1mA	---	0.050	---	V/℃
RDS(ON)	Static Drain-Source On-Resistance2	VGS=10V , ID=25A	---	1.2	1.5	mΩ
RDS(ON)	Static Drain-Source On-Resistance2	VGS=4.5V , ID=20A	---	1.7	2.5	mΩ
VGS(th)	Gate Threshold Voltage	VGS=VDS , ID =250uA	1.2	1.7	2.6	V
△VGS(th)	VGS(th) Temperature Coefficient	VGS=VDS , ID =250uA	---	-6.94	---	mV/℃
IDSS	Drain-Source Leakage Current	VDS=40V , VGS=0V , TJ=25℃	---	---	1	uA
IDSS	Drain-Source Leakage Current	VDS=40V , VGS=0V , TJ=55℃	---	---	10	uA
IGSS	Gate-Source Leakage Current	VGS=±20V , VDS=0V	---	---	±100	nA
gfs	Forward Transconductance	VDS=5V , ID=50A	---	160	---	S
Rg	Gate Resistance	VDS=0V , VGS=0V , f=1MHz	---	1.0	---	Ω
Qg	Total Gate Charge (10V)	VDS=20V , VGS=10V , ID=25A	---	130	---	nC
Qgs	Gate-Source Charge		---	43	---
Qgd	Gate-Drain Charge		---	83	---
Td(on)	Turn-On Delay Time	VDD=20V , VGEN=4.5V , RG=2.7Ω, ID=1A .	---	30	---	ns
Tr	Rise Time		---	115	---
Td(off)	Turn-Off Delay Time		---	95	---
Tf	Fall Time		---	80	---
Ciss	Input Capacitance	VDS=20V , VGS=0V , f=1MHz	---	8100	---	pF
Coss	Output Capacitance		---	1200	---
Crss	Reverse Transfer Capacitance		---	800	---