WSF70P02 P-Channel -20V -70A TO-252 WINSOK MOSFET

short description:

Model Number: WSF70P02

BVDSS: -20V

RDSON: 6.8mΩ

ID: -70A

Channel: P-Channel

Package: TO-252

Product Summery: The WSF70P02 MOSFET has a voltage of -20V, current of -70A, resistance of 6.8mΩ, a P-Channel, and TO-252 packaging.

Applications: E-cigarettes, wireless chargers, motors, power backups, drones, healthcare, car chargers, controllers, electronics, appliances, and consumer goods.

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Product Detail

Application

Product Tags

General Description

The WSF70P02 MOSFET is the top-performing P-channel trench device with high cell density. It offers outstanding RDSON and gate charge for most synchronous buck converter applications. The device meets the RoHS and Green Product requirements, is 100% EAS guaranteed, and has been approved for full function reliability.

Features

Advanced Trench Technology with high cell density, super low gate charge, excellent reduction in CdV/dt effect, a 100% EAS guarantee, and options for environmentally-friendly devices.

Applications

High Frequency Point-of-Load Synchronous ,Buck Converter for MB/NB/UMPC/VGA ,Networking DC-DC Power System ,Load Switch,E-cigarettes, wireless charging, motors, emergency power supplies, drones, medical care, car chargers, controllers, digital products, small household appliances, consumer electronics.

corresponding material number

AOS

Important parameters

Symbol	Parameter	Rating		Units
		10s	Steady State
VDS	Drain-Source Voltage	-20		V
VGS	Gate-Source Voltage	±12		V
ID@TC=25℃	Continuous Drain Current, VGS @ -10V1	-70		A
ID@TC=100℃	Continuous Drain Current, VGS @ -10V1	-36		A
IDM	Pulsed Drain Current2	-200		A
EAS	Single Pulse Avalanche Energy3	360		mJ
IAS	Avalanche Current	-55.4		A
PD@TC=25℃	Total Power Dissipation4	80		W
TSTG	Storage Temperature Range	-55 to 150		℃
TJ	Operating Junction Temperature Range	-55 to 150		℃

Symbol	Parameter	Conditions	Min.	Typ.	Max.	Unit
BVDSS	Drain-Source Breakdown Voltage	VGS=0V , ID=-250uA	-20	---	---	V
△BVDSS/△TJ	BVDSS Temperature Coefficient	Reference to 25℃ , ID=-1mA	---	-0.018	---	V/℃
RDS(ON)	Static Drain-Source On-Resistance2	VGS=-4.5V , ID=-15A	---	6.8	9.0	mΩ
RDS(ON)	Static Drain-Source On-Resistance2					mΩ
		VGS=-2.5V , ID=-10A	---	8.2	11
VGS(th)	Gate Threshold Voltage	VGS=VDS , ID =-250uA	-0.4	-0.6	-1.2	V
		VGS=VDS , ID =-250uA
△VGS(th)	VGS(th) Temperature Coefficient		---	2.94	---	mV/℃
IDSS	Drain-Source Leakage Current	VDS=-20V , VGS=0V , TJ=25℃	---	---	1	uA
IDSS	Drain-Source Leakage Current					uA
		VDS=-20V , VGS=0V , TJ=55℃	---	---	5
IGSS	Gate-Source Leakage Current	VGS=±12V , VDS=0V	---	---	±100	nA
gfs	Forward Transconductance	VDS=-5V , ID=-10A	---	45	---	S
Qg	Total Gate Charge (-4.5V)	VDS=-15V , VGS=-4.5V , ID=-10A	---	63	---	nC
Qgs	Gate-Source Charge		---	9.1	---
Qgd	Gate-Drain Charge		---	13	---
Td(on)	Turn-On Delay Time	VDD=-10V , VGS=-4.5V , RG=3.3Ω, ID=-10A	---	16	---	ns
Tr	Rise Time		---	77	---
Td(off)	Turn-Off Delay Time		---	195	---
Tf	Fall Time		---	186	---
Ciss	Input Capacitance	VDS=-10V , VGS=0V , f=1MHz	---	5783	---	pF
Coss	Output Capacitance		---	520	---
Crss	Reverse Transfer Capacitance		---	445	---