WSF6012 N&P-Channel 60V/-60V 20A/-15A TO-252-4L WINSOK MOSFET

Model Number: WSF6012

BVDSS: 60V/-60V

RDSON: 28mΩ/75mΩ

ID: 20A/-15A

Channel: N&P-Channel

Package: TO-252-4L

Product Summery: The WSF6012 MOSFET has a voltage range of 60V and -60V, can handle currents up to 20A and -15A, has a resistance of 28mΩ and 75mΩ, features both N&P-Channel, and is packaged in TO-252-4L.

Applications: E-cigarettes, wireless chargers, motors, power backups, drones, healthcare, car chargers, controllers, electronics, appliances, and consumer goods.

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Product Detail

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General Description

The WSF6012 MOSFET is a high-performance device with a high cell density design. It provides excellent RDSON and gate charge suitable for most synchronous buck converter applications. Additionally, it meets RoHS and Green Product requirements, and comes with 100% EAS guarantee for full functionality and reliability.

Features

Advanced Trench Technology with High Cell Density, Super Low Gate Charge, Excellent CdV/dt Effect Decline, 100% EAS Guarantee, and Environmentally-Friendly Device Options.

Applications

High Frequency Point-of-Load Synchronous Buck Converter, Networking DC-DC Power System, Load Switch, E-cigarettes, wireless charging, motors, emergency power supplies, drones, healthcare, car chargers, controllers, digital devices, small home appliances, and consumer electronics.

corresponding material number

AOS AOD603A,

Important parameters

Symbol	Parameter	Rating		Units
Symbol	Parameter	N-Channel	P-Channel	Units
VDS	Drain-Source Voltage	60	-60	V
VGS	Gate-Source Voltage	±20	±20	V
ID@TC=25℃	Continuous Drain Current, VGS @ 10V1	20	-15	A
ID@TC=70℃	Continuous Drain Current, VGS @ 10V1	15	-10	A
IDM	Pulsed Drain Current2	46	-36	A
EAS	Single Pulse Avalanche Energy3	200	180	mJ
IAS	Avalanche Current	59	-50	A
PD@TC=25℃	Total Power Dissipation4	34.7	34.7	W
TSTG	Storage Temperature Range	-55 to 150	-55 to 150	℃
TJ	Operating Junction Temperature Range	-55 to 150	-55 to 150	℃

Symbol	Parameter	Conditions	Min.	Typ.	Max.	Unit
BVDSS	Drain-Source Breakdown Voltage	VGS=0V , ID=250uA	60	---	---	V
△BVDSS/△TJ	BVDSS Temperature Coefficient	Reference to 25℃ , ID=1mA	---	0.063	---	V/℃
RDS(ON)	Static Drain-Source On-Resistance2	VGS=10V , ID=8A	---	28	37	mΩ
RDS(ON)	Static Drain-Source On-Resistance2	VGS=4.5V , ID=5A	---	37	45	mΩ
VGS(th)	Gate Threshold Voltage	VGS=VDS , ID =250uA	1	---	2.5	V
△VGS(th)	VGS(th) Temperature Coefficient	VGS=VDS , ID =250uA	---	-5.24	---	mV/℃
IDSS	Drain-Source Leakage Current	VDS=48V , VGS=0V , TJ=25℃	---	---	1	uA
IDSS	Drain-Source Leakage Current	VDS=48V , VGS=0V , TJ=55℃	---	---	5	uA
IGSS	Gate-Source Leakage Current	VGS=±20V , VDS=0V	---	---	±100	nA
gfs	Forward Transconductance	VDS=5V , ID=8A	---	21	---	S
Rg	Gate Resistance	VDS=0V , VGS=0V , f=1MHz	---	3.0	4.5	Ω
Qg	Total Gate Charge (4.5V)	VDS=48V , VGS=4.5V , ID=8A	---	12.6	20	nC
Qgs	Gate-Source Charge		---	3.5	---
Qgd	Gate-Drain Charge		---	6.3	---
Td(on)	Turn-On Delay Time	VDD=30V , VGS=4.5V , RG=3.3Ω, ID=1A	---	8	---	ns
Tr	Rise Time		---	14.2	---
Td(off)	Turn-Off Delay Time		---	24.6	---
Tf	Fall Time		---	4.6	---
Ciss	Input Capacitance	VDS=15V , VGS=0V , f=1MHz	---	670	---	pF
Coss	Output Capacitance		---	70	---
Crss	Reverse Transfer Capacitance		---	35	---

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