WSF4022 Dual N-Channel 40V 20A TO-252-4L WINSOK MOSFET
General Description
The WSF4022 is the highest performance trench Dual N-Ch MOSFET with extreme high cell density,which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.The WSF4022 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved.
Features
For Fan Pre-driver H-Bridge,Motor Control,Synchronous Rectification,E-cigarettes, wireless charging, motors, emergency power supplies, drones, medical care, car chargers, controllers, digital products, small household appliances, consumer electronics.
Applications
For Fan Pre-driver H-Bridge,Motor Control,Synchronous Rectification,E-cigarettes, wireless charging, motors, emergency power supplies, drones, medical care, car chargers, controllers, digital products, small household appliances, consumer electronics.
corresponding material number
AOS
Important parameters
| Symbol | Parameter | Rating | Units | |
| VDS | Drain-Source Voltage | 40 | V | |
| VGS | Gate-Source Voltage | ±20 | V | |
| ID | Drain Current (Continuous) *AC | TC=25°C | 20* | A |
| ID | Drain Current (Continuous) *AC | TC=100°C | 20* | A |
| ID | Drain Current (Continuous) *AC | TA=25°C | 12.2 | A |
| ID | Drain Current (Continuous) *AC | TA=70°C | 10.2 | A |
| IDMa | Pulsed Drain Current | TC=25°C | 80* | A |
| EASb | Single Pulse Avalanche Energy | L=0.5mH | 25 | mJ |
| IAS b | Avalanche Current | L=0.5mH | 17.8 | A |
| PD | Maximum Power Dissipation | TC=25°C | 39.4 | W |
| PD | Maximum Power Dissipation | TC=100°C | 19.7 | W |
| PD | Power Dissipation | TA=25°C | 6.4 | W |
| PD | Power Dissipation | TA=70°C | 4.2 | W |
| TJ | Operating Junction Temperature Range | 175 | ℃ | |
| TSTG | Operating Temperature/ Storage Temperature | -55~175 | ℃ | |
| RθJA b | Thermal Resistance Junction-Ambient | Steady State c | 60 | ℃/W |
| RθJC | Thermal Resistance Junction to Case | 3.8 | ℃/W |
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| Static | ||||||
| V(BR)DSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = 250μA | 40 | V | ||
| IDSS | Zero Gate Voltage Drain Current | VDS = 32V, VGS = 0V | 1 | µA | ||
| IDSS | Zero Gate Voltage Drain Current | VDS = 32V, VGS = 0V, TJ=85°C | 30 | µA | ||
| IGSS | Gate Leakage Current | VGS = ±20V, VDS = 0V | ±100 | nA | ||
| VGS(th) | Gate Threshold Voltage | VGS = VDS, IDS = 250µA | 1.1 | 1.6 | 2.5 | V |
| RDS(on) d | Drain-Source On-state Resistance | VGS = 10V, ID = 10A | 16 | 21 | mΩ | |
| VGS = 4.5V, ID = 5A | 18 | 25 | mΩ | |||
| Gate Chargee | ||||||
| Qg | Total Gate Charge | VDS=20V,VGS=4.5V, ID=10A | 7.5 | nC | ||
| Qgs | Gate-Source Charge | 3.24 | nC | |||
| Qgd | Gate-Drain Charge | 2.75 | nC | |||
| Dynamice | ||||||
| Ciss | Input Capacitance | VGS=0V, VDS=20V, f=1MHz | 815 | pF | ||
| Coss | Output Capacitance | 95 | pF | |||
| Crss | Reverse Transfer Capacitance | 60 | pF | |||
| td (on) | Turn-on Delay Time | VDD=20V, VGEN=10V,
IDS=1A,RG=6Ω,RL=20Ω. |
7.8 | ns | ||
| tr | Turn-on Rise Time | 6.9 | ns | |||
| td(off) | Turn-off Delay Time | 22.4 | ns | |||
| tf | Turn-off Fall Time | 4.8 | ns | |||
| Diode | ||||||
| VSDd | Diode Forward Voltage | ISD=1A, VGS=0V | 0.75 | 1.1 | V | |
| trr | Input Capacitance | IDS=10A, dlSD/dt=100A/µs | 13 | ns | ||
| Qrr | Output Capacitance | 8.7 | nC | |||
