WSD80130DN56 N-channel 80V 130A DFN5X6-8 WINSOK MOSFET

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WSD80130DN56 N-channel 80V 130A DFN5X6-8 WINSOK MOSFET

short description:

Part Number:WSD80130DN56

BVDSS:80V

ID:130A

RDSON:2.7mΩ

Channel:N-channel

Package:DFN5X6-8


Product Detail

Application

Product Tags

WINSOK MOSFET product overview

The voltage of WSD80130DN56 MOSFET is 80V, the current is 130A, the resistance is 2.7mΩ, the channel is N-channel, and the package is DFN5X6-8.

WINSOK MOSFET application areas

Drones MOSFET, motors MOSFET, medical MOSFET, power tools MOSFET, ESCs MOSFET.

WINSOK MOSFET corresponds to other brand material numbers

AOS MOSFET AON6276,AONS62814T.STMicroelectronics MOSFET STL13N8F7,STL135N8F7AG.

MOSFET parameters

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

80

V

VGS

Gate-Source Voltage

±20

V

TJ

Maximum Junction Temperature

150

°C

ID

Storage Temperature Range

-55 to 150

°C

ID

Continuous Drain Current, VGS=10V,TC=25°C

130

A

Continuous Drain Current, VGS=10V,TC=70°C

89

A

IDM

Pulsed Drain Current ,TC=25°C

400

A

PD

Maximum Power Dissipation,TC=25°C

200

W

RqJC

Thermal Resistance-Junction to Case

1.25

°C

       

 

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source Breakdown Voltage VGS=0V , ID=250uA

80

---

---

V

BVDSS/△TJ

BVDSS Temperature Coefficient Reference to 25 , ID=1mA

---

0.043

---

V/

RDS(ON)

Static Drain-Source On-Resistance2 VGS=10V , ID=40A

---

2.7

3.6

mΩ

VGS(th)

Gate Threshold Voltage VGS=VDS , ID =250uA

2.0

3.0

4.0

V

VGS(th)

VGS(th) Temperature Coefficient

---

-6.94

---

mV/

IDSS

Drain-Source Leakage Current VDS=48V , VGS=0V , TJ=25

---

---

2

uA

VDS=48V , VGS=0V , TJ=55

---

---

10

IGSS

Gate-Source Leakage Current VGS=±20V , VDS=0V

---

---

±100

nA

Qg

Total Gate Charge (10V) VDS=30V , VGS=10V , ID=30A

---

48.6

---

nC

Qgs

Gate-Source Charge

---

17.5

---

Qgd

Gate-Drain Charge

---

10.4

---

Td(on)

Turn-On Delay Time VDD=30V , VGS=10V ,

RG=2.5Ω, ID=2A ,RL=15Ω.

---

20

---

ns

Tr

Rise Time

---

10

---

Td(off)

Turn-Off Delay Time

---

35

---

Tf

Fall Time

---

12

---

Ciss

Input Capacitance VDS=25V , VGS=0V , f=1MHz

---

4150

---

pF

Coss

Output Capacitance

---

471

---

Crss

Reverse Transfer Capacitance

---

20

---


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