WSD80120DN56 N-channel 85V 120A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET product overview
The voltage of WSD80120DN56 MOSFET is 85V, the current is 120A, the resistance is 3.7mΩ, the channel is N-channel, and the package is DFN5X6-8.
WINSOK MOSFET application areas
Medical voltage MOSFET, photographic equipment MOSFET, drones MOSFET, industrial control MOSFET, 5G MOSFET, automotive electronics MOSFET.
WINSOK MOSFET corresponds to other brand material numbers
AOS MOSFET AON6276,AONS62814T.STMicroelectronics MOSFET STL13N8F7,STL135N8F7AG.
MOSFET parameters
|
Symbol |
Parameter |
Rating |
Units |
|
VDS |
Drain-Source Voltage |
85 |
V |
|
VGS |
Gate-Source Voltage |
±25 |
V |
|
ID@TC=25℃ |
Continuous Drain Current, VGS @ 10V |
120 |
A |
|
ID@TC=100℃ |
Continuous Drain Current, VGS @ 10V |
96 |
A |
|
IDM |
Pulsed Drain Current..TC=25°C |
384 |
A |
|
EAS |
Avalanche Energy, Single pulse,L=0.5mH |
320 |
mJ |
|
IAS |
Avalanche Current, Single pulse,L=0.5mH |
180 |
A |
|
PD@TC=25℃ |
Total Power Dissipation |
104 |
W |
|
PD@TC=100℃ |
Total Power Dissipation |
53 |
W |
|
TSTG |
Storage Temperature Range |
-55 to 175 |
℃ |
|
TJ |
Operating Junction Temperature Range |
175 |
℃ |
|
Symbol |
Parameter |
Conditions |
Min. |
Typ. |
Max. |
Unit |
|
BVDSS |
Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 85 |
--- |
--- |
V |
|
△BVDSS/△TJ |
BVDSS Temperature Coefficient | Reference to 25℃ , ID=1mA |
--- |
0.096 |
--- |
V/℃ |
|
RDS(ON) |
Static Drain-Source On-Resistance | VGS=10V,ID=50A |
--- |
3.7 |
4.8 |
mΩ |
|
VGS(th) |
Gate Threshold Voltage | VGS=VDS , ID =250uA |
2.0 |
3.0 |
4.0 |
V |
|
△VGS(th) |
VGS(th) Temperature Coefficient |
--- |
-5.5 |
--- |
mV/℃ | |
|
IDSS |
Drain-Source Leakage Current | VDS=85V , VGS=0V , TJ=25℃ |
--- |
--- |
1 |
uA |
| VDS=85V , VGS=0V , TJ=55℃ |
--- |
--- |
10 |
|||
|
IGSS |
Gate-Source Leakage Current | VGS=±25V , VDS=0V |
--- |
--- |
±100 |
nA |
|
Rg |
Gate Resistance | VDS=0V , VGS=0V , f=1MHz |
--- |
3.2 |
--- |
Ω |
|
Qg |
Total Gate Charge (10V) | VDS=50V , VGS=10V , ID=10A |
--- |
54 |
--- |
nC |
|
Qgs |
Gate-Source Charge |
--- |
17 |
--- |
||
|
Qgd |
Gate-Drain Charge |
--- |
11 |
--- |
||
|
Td(on) |
Turn-On Delay Time | VDD=50V , VGS=10V ,
RG=1Ω,RL=1Ω,IDS=10A. |
--- |
21 |
--- |
ns |
|
Tr |
Rise Time |
--- |
18 |
--- |
||
|
Td(off) |
Turn-Off Delay Time |
--- |
36 |
--- |
||
|
Tf |
Fall Time |
--- |
10 |
--- |
||
|
Ciss |
Input Capacitance | VDS=40V , VGS=0V , f=1MHz |
--- |
3750 |
--- |
pF |
|
Coss |
Output Capacitance |
--- |
395 |
--- |
||
|
Crss |
Reverse Transfer Capacitance |
--- |
180 |
--- |
