WSD80100DN56 N-channel 80V 100A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET product overview
The voltage of WSD80100DN56 MOSFET is 80V, the current is 100A, the resistance is 6.1mΩ, the channel is N-channel, and the package is DFN5X6-8.
WINSOK MOSFET application areas
Drones MOSFET, motors MOSFET, automotive electronics MOSFET, major appliances MOSFET.
WINSOK MOSFET corresponds to other brand material numbers
AOS MOSFET AON6276,AONS62814T.STMicroelectronics MOSFET STL1N8F7.POTENS Semiconductor MOSFET PDC7966X.
MOSFET parameters
|
Symbol |
Parameter |
Rating |
Units |
|
VDS |
Drain-Source Voltage |
80 |
V |
|
VGS |
Gate-Source Voltage |
±20 |
V |
|
TJ |
Maximum Junction Temperature |
150 |
°C |
|
ID |
Storage Temperature Range |
-55 to 150 |
°C |
|
ID |
Continuous Drain Current, VGS=10V,TC=25°C |
100 |
A |
| Continuous Drain Current, VGS=10V,TC=100°C |
80 |
A |
|
|
IDM |
Pulsed Drain Current ,TC=25°C |
380 |
A |
|
PD |
Maximum Power Dissipation,TC=25°C |
200 |
W |
|
RqJC |
Thermal Resistance-Junction to Case |
0.8 |
°C |
|
EAS |
Avalanche Energy, Single pulse,L=0.5mH |
800 |
mJ |
|
Symbol |
Parameter |
Conditions |
Min. |
Typ. |
Max. |
Unit |
|
BVDSS |
Drain-Source Breakdown Voltage | VGS=0V , ID=250uA |
80 |
--- |
--- |
V |
|
△BVDSS/△TJ |
BVDSS Temperature Coefficient | Reference to 25℃ , ID=1mA |
--- |
0.043 |
--- |
V/℃ |
|
RDS(ON) |
Static Drain-Source On-Resistance2 | VGS=10V , ID=40A |
--- |
6.1 |
8.5 |
mΩ |
|
VGS(th) |
Gate Threshold Voltage | VGS=VDS , ID =250uA |
2.0 |
3.0 |
4.0 |
V |
|
△VGS(th) |
VGS(th) Temperature Coefficient |
--- |
-6.94 |
--- |
mV/℃ | |
|
IDSS |
Drain-Source Leakage Current | VDS=48V , VGS=0V , TJ=25℃ |
--- |
--- |
2 |
uA |
| VDS=48V , VGS=0V , TJ=55℃ |
--- |
--- |
10 |
|||
|
IGSS |
Gate-Source Leakage Current | VGS=±20V , VDS=0V |
--- |
--- |
±100 |
nA |
|
gfs |
Forward Transconductance | VDS=5V , ID=20A |
80 |
--- |
--- |
S |
|
Qg |
Total Gate Charge (10V) | VDS=30V , VGS=10V , ID=30A |
--- |
125 |
--- |
nC |
|
Qgs |
Gate-Source Charge |
--- |
24 |
--- |
||
|
Qgd |
Gate-Drain Charge |
--- |
30 |
--- |
||
|
Td(on) |
Turn-On Delay Time | VDD=30V , VGS=10V ,
RG=2.5Ω, ID=2A ,RL=15Ω. |
--- |
20 |
--- |
ns |
|
Tr |
Rise Time |
--- |
19 |
--- |
||
|
Td(off) |
Turn-Off Delay Time |
--- |
70 |
--- |
||
|
Tf |
Fall Time |
--- |
30 |
--- |
||
|
Ciss |
Input Capacitance | VDS=25V , VGS=0V , f=1MHz |
--- |
4900 |
--- |
pF |
|
Coss |
Output Capacitance |
--- |
410 |
--- |
||
|
Crss |
Reverse Transfer Capacitance |
--- |
315 |
--- |
