WSD80100DN56 N-channel 80V 100A DFN5X6-8 WINSOK MOSFET

Part Number：WSD80100DN56

BVDSS：80V

ID：100A

RDSON：6.1mΩ

Channel：N-channel

Package：DFN5X6-8

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WINSOK MOSFET product overview

The voltage of WSD80100DN56 MOSFET is 80V, the current is 100A, the resistance is 6.1mΩ, the channel is N-channel, and the package is DFN5X6-8.

WINSOK MOSFET application areas

Drones MOSFET, motors MOSFET, automotive electronics MOSFET, major appliances MOSFET.

WINSOK MOSFET corresponds to other brand material numbers

AOS MOSFET AON6276,AONS62814T.STMicroelectronics MOSFET STL1N8F7.POTENS Semiconductor MOSFET PDC7966X.

MOSFET parameters

Symbol	Parameter	Rating	Units
VDS	Drain-Source Voltage	80	V
VGS	Gate-Source Voltage	±20	V
TJ	Maximum Junction Temperature	150	°C
ID	Storage Temperature Range	-55 to 150	°C
ID	Continuous Drain Current, V_GS=10V,T_C=25°C	100	A
ID	Continuous Drain Current, V_GS=10V,T_C=100°C	80	A
IDM	Pulsed Drain Current ,T_C=25°C	380	A
P_D	Maximum Power Dissipation,T_C=25°C	200	W
RqJC	Thermal Resistance-Junction to Case	0.8	°C
E_AS	Avalanche Energy, Single pulse,L=0.5mH	800	mJ

Symbol	Parameter	Conditions	Min.	Typ.	Max.	Unit
BV_DSS	Drain-Source Breakdown Voltage	V_GS=0V , I_D=250uA	80	---	---	V
△BVDSS/△TJ	BV_DSS Temperature Coefficient	Reference to 25℃ , I_D=1mA	---	0.043	---	V/℃
RDS(ON)	Static Drain-Source On-Resistance²	VGS=10V , I_D=40A	---	6.1	8.5	mΩ
VGS(th)	Gate Threshold Voltage	V_GS=V_DS , I_D =250uA	2.0	3.0	4.0	V
△V_GS(th)	V_GS(th)Temperature Coefficient	V_GS=V_DS , I_D =250uA	---	-6.94	---	mV/℃
IDSS	Drain-Source Leakage Current	V_DS=48V , V_GS=0V , T_J=25℃	---	---	2	uA
IDSS	Drain-Source Leakage Current	V_DS=48V , V_GS=0V , T_J=55℃	---	---	10	uA
IGSS	Gate-Source Leakage Current	V_GS=±20V , V_DS=0V	---	---	±100	nA
gfs	Forward Transconductance	V_DS=5V , I_D=20A	80	---	---	S
Q_g	Total Gate Charge (10V)	V_DS=30V , V_GS=10V , I_D=30A	---	125	---	nC
Q_gs	Gate-Source Charge		---	24	---
Q_gd	Gate-Drain Charge		---	30	---
Td(on)	Turn-On Delay Time	V_DD=30V , V_GS=10V , R_G=2.5Ω, I_D=2A ,RL=15Ω.	---	20	---	ns
T_r	Rise Time		---	19	---
Td(off)	Turn-Off Delay Time		---	70	---
T_f	Fall Time		---	30	---
C_iss	Input Capacitance	V_DS=25V , V_GS=0V , f=1MHz	---	4900	---	pF
Coss	Output Capacitance		---	410	---
C_rss	Reverse Transfer Capacitance		---	315	---

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