WSD75N12GDN56 N-channel 120V 75A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET product overview
The voltage of WSD75N12GDN56 MOSFET is 120V, the current is 75A, the resistance is 6mΩ, the channel is N-channel, and the package is DFN5X6-8.
WINSOK MOSFET application areas
Medical equipment MOSFET, drones MOSFET, PD power supplies MOSFET, LED power supplies MOSFET, industrial equipment MOSFET.
MOSFET application fieldsWINSOK MOSFET corresponds to other brand material numbers
AOS MOSFET AON6226,AON6294,AON6298,AONS6292,AONS6692,AONS66923.PANJIT MOSFET PSMQC76N12LS1.
MOSFET parameters
|
Symbol |
Parameter |
Rating |
Units |
|
VDSS |
Drain-to-Source Voltage |
120 |
V |
|
VGS |
Gate-to-Source Voltage |
±20 |
V |
|
ID |
1 Continuous Drain Current (Tc=25℃) |
75 |
A |
|
ID |
1 Continuous Drain Current (Tc=70℃) |
70 |
A |
|
IDM |
Pulsed Drain Current |
320 |
A |
|
IAR |
Single pulse avalanche current |
40 |
A |
|
EASa |
Single pulse avalanche energy |
240 |
mJ |
|
PD |
Power Dissipation |
125 |
W |
|
TJ，Tstg |
Operating Junction and Storage Temperature Range |
-55 to 150 |
℃ |
|
TL |
Maximum Temperature for Soldering |
260 |
℃ |
|
RθJC |
Thermal Resistance, Junction-to-Case |
1.0 |
℃/W |
|
RθJA |
Thermal Resistance, Junction-to-Ambient |
50 |
℃/W |
|
Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Units |
|
VDSS |
Drain to Source Breakdown Voltage | VGS=0V, ID=250µA |
120 |
-- |
-- |
V |
|
IDSS |
Drain to Source Leakage Current | VDS = 120V, VGS= 0V |
-- |
-- |
1 |
µA |
|
IGSS(F) |
Gate to Source Forward Leakage | VGS =+20V |
-- |
-- |
100 |
nA |
|
IGSS(R) |
Gate to Source Reverse Leakage | VGS =-20V |
-- |
-- |
-100 |
nA |
|
VGS(TH) |
Gate Threshold Voltage | VDS=VGS, ID = 250µA |
2.5 |
3.0 |
3.5 |
V |
|
RDS(ON)1 |
Drain-to-Source On-Resistance | VGS=10V, ID=20A |
-- |
6.0 |
6.8 |
mΩ |
|
gFS |
Forward Transconductance | VDS=5V, ID=50A |
130 |
-- |
S |
|
|
Ciss |
Input Capacitance | VGS = 0V VDS = 50V f =1.0MHz |
-- |
4282 |
-- |
pF |
|
Coss |
Output Capacitance |
-- |
429 |
-- |
pF |
|
|
Crss |
Reverse Transfer Capacitance |
-- |
17 |
-- |
pF |
|
|
Rg |
Gate resistance |
-- |
2.5 |
-- |
Ω |
|
|
td(ON) |
Turn-on Delay Time |
ID =20A VDS = 50V VGS = 10V RG = 5Ω |
-- |
20 |
-- |
ns |
|
tr |
Rise Time |
-- |
11 |
-- |
ns |
|
|
td(OFF) |
Turn-Off Delay Time |
-- |
55 |
-- |
ns |
|
|
tf |
Fall Time |
-- |
28 |
-- |
ns |
|
|
Qg |
Total Gate Charge | VGS =0~10V VDS = 50VID =20A |
-- |
61.4 |
-- |
nC |
|
Qgs |
Gate Source Charge |
-- |
17.4 |
-- |
nC |
|
|
Qgd |
Gate Drain Charge |
-- |
14.1 |
-- |
nC |
|
|
IS |
Diode Forward Current | TC =25 °C |
-- |
-- |
100 |
A |
|
ISM |
Diode Pulse Current |
-- |
-- |
320 |
A |
|
|
VSD |
Diode Forward Voltage | IS=6.0A, VGS=0V |
-- |
-- |
1.2 |
V |
|
trr |
Reverse Recovery time | IS=20A, VDD=50V dIF/dt=100A/μs |
-- |
100 |
-- |
ns |
|
Qrr |
Reverse Recovery Charge |
-- |
250 |
-- |
nC |
