WSD75100DN56 N-channel 75V 100A DFN5X6-8 WINSOK MOSFET

Part Number：WSD75100DN56

BVDSS：75V

ID：100A

RDSON：5.3mΩ

Channel：N-channel

Package：DFN5X6-8

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WINSOK MOSFET product overview

The voltage of WSD75100DN56 MOSFET is 75V, the current is 100A, the resistance is 5.3mΩ, the channel is N-channel, and the package is DFN5X6-8.

WINSOK MOSFET application areas

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WINSOK MOSFET corresponds to other brand material numbers

AOS MOSFET AON6276,AON6278,AON628,AON6282,AON6448.Onsemi,FAIRCHILD MOSFET NVMFS6H824N.STMicroelectronics MOSFET STL1N8F7.INFINEON,IR MOSFET BSC42NE7NS3G,BSC36NE7NS3G.POTENS Semiconductor MOSFET PDC7966X.

MOSFET parameters

Symbol	Parameter	Rating	Units
VDS	Drain-Source Voltage	75	V
VGS	Gate-Source Voltage	±25	V
TJ	Maximum Junction Temperature	150	°C
ID	Storage Temperature Range	-55 to 150	°C
IS	Diode Continuous Forward Current,T_C=25°C	50	A
ID	Continuous Drain Current, V_GS=10V,T_C=25°C	100	A
ID	Continuous Drain Current, V_GS=10V,T_C=100°C	73	A
IDM	Pulsed Drain Current ,T_C=25°C	400	A
P_D	Maximum Power Dissipation,T_C=25°C	155	W
P_D	Maximum Power Dissipation,T_C=100°C	62	W
R_θJA	Thermal Resistance-Junction to Ambient ,t =10s ̀	20	°C
R_θJA	Thermal Resistance-Junction to Ambient ,Steady State	60	°C
RqJC	Thermal Resistance-Junction to Case	0.8	°C
IAS	Avalanche Current, Single pulse,L=0.5mH	30	A
E_AS	Avalanche Energy, Single pulse,L=0.5mH	225	mJ

Symbol	Parameter	Conditions	Min.	Typ.	Max.	Unit
BV_DSS	Drain-Source Breakdown Voltage	V_GS=0V , I_D=250uA	75	---	---	V
△BVDSS/△TJ	BV_DSS Temperature Coefficient	Reference to 25℃ , I_D=1mA	---	0.043	---	V/℃
RDS(ON)	Static Drain-Source On-Resistance²	VGS=10V , I_D=25A	---	5.3	6.4	mΩ
VGS(th)	Gate Threshold Voltage	V_GS=V_DS , I_D =250uA	2.0	3.0	4.0	V
△V_GS(th)	V_GS(th)Temperature Coefficient	V_GS=V_DS , I_D =250uA	---	-6.94	---	mV/℃
IDSS	Drain-Source Leakage Current	V_DS=48V , V_GS=0V , T_J=25℃	---	---	2	uA
IDSS	Drain-Source Leakage Current	V_DS=48V , V_GS=0V , T_J=55℃	---	---	10	uA
IGSS	Gate-Source Leakage Current	V_GS=±20V , V_DS=0V	---	---	±100	nA
gfs	Forward Transconductance	V_DS=5V , I_D=20A	---	50	---	S
R_g	Gate Resistance	V_DS=0V , V_GS=0V , f=1MHz	---	1.0	2	Ω
Q_g	Total Gate Charge (10V)	V_DS=20V , V_GS=10V , I_D=40A	---	65	85	nC
Q_gs	Gate-Source Charge		---	20	---
Q_gd	Gate-Drain Charge		---	17	---
Td(on)	Turn-On Delay Time	V_DD=30V , V_GEN=10V , R_G=1Ω, I_D=1A ,RL=15Ω.	---	27	49	ns
T_r	Rise Time		---	14	26
Td(off)	Turn-Off Delay Time		---	60	108
T_f	Fall Time		---	37	67
C_iss	Input Capacitance	V_DS=20V , V_GS=0V , f=1MHz	3450	3500	4550	pF
Coss	Output Capacitance		245	395	652
C_rss	Reverse Transfer Capacitance		100	195	250

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