WSD75100DN56 N-channel 75V 100A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET product overview
The voltage of WSD75100DN56 MOSFET is 75V, the current is 100A, the resistance is 5.3mΩ, the channel is N-channel, and the package is DFN5X6-8.
WINSOK MOSFET application areas
E-cigarettes MOSFET, wireless charging MOSFET, drones MOSFET, medical care MOSFET, car chargers MOSFET, controllers MOSFET, digital products MOSFET, small household appliances MOSFET, consumer electronics MOSFET.
WINSOK MOSFET corresponds to other brand material numbers
AOS MOSFET AON6276,AON6278,AON628,AON6282,AON6448.Onsemi,FAIRCHILD MOSFET NVMFS6H824N.STMicroelectronics MOSFET STL1N8F7.INFINEON,IR MOSFET BSC42NE7NS3G,BSC36NE7NS3G.POTENS Semiconductor MOSFET PDC7966X.
MOSFET parameters
|
Symbol |
Parameter |
Rating |
Units |
|
VDS |
Drain-Source Voltage |
75 |
V |
|
VGS |
Gate-Source Voltage |
±25 |
V |
|
TJ |
Maximum Junction Temperature |
150 |
°C |
|
ID |
Storage Temperature Range |
-55 to 150 |
°C |
|
IS |
Diode Continuous Forward Current,TC=25°C |
50 |
A |
|
ID |
Continuous Drain Current, VGS=10V,TC=25°C |
100 |
A |
| Continuous Drain Current, VGS=10V,TC=100°C |
73 |
A |
|
|
IDM |
Pulsed Drain Current ,TC=25°C |
400 |
A |
|
PD |
Maximum Power Dissipation,TC=25°C |
155 |
W |
| Maximum Power Dissipation,TC=100°C |
62 |
W |
|
|
RθJA |
Thermal Resistance-Junction to Ambient ,t =10s ̀ |
20 |
°C |
|
Thermal Resistance-Junction to Ambient ,Steady State |
60 |
°C |
|
|
RqJC |
Thermal Resistance-Junction to Case |
0.8 |
°C |
|
IAS |
Avalanche Current, Single pulse,L=0.5mH |
30 |
A |
|
EAS |
Avalanche Energy, Single pulse,L=0.5mH |
225 |
mJ |
|
Symbol |
Parameter |
Conditions |
Min. |
Typ. |
Max. |
Unit |
|
BVDSS |
Drain-Source Breakdown Voltage | VGS=0V , ID=250uA |
75 |
--- |
--- |
V |
|
△BVDSS/△TJ |
BVDSS Temperature Coefficient | Reference to 25℃ , ID=1mA |
--- |
0.043 |
--- |
V/℃ |
|
RDS(ON) |
Static Drain-Source On-Resistance2 | VGS=10V , ID=25A |
--- |
5.3 |
6.4 |
mΩ |
|
VGS(th) |
Gate Threshold Voltage | VGS=VDS , ID =250uA |
2.0 |
3.0 |
4.0 |
V |
|
△VGS(th) |
VGS(th) Temperature Coefficient |
--- |
-6.94 |
--- |
mV/℃ | |
|
IDSS |
Drain-Source Leakage Current | VDS=48V , VGS=0V , TJ=25℃ |
--- |
--- |
2 |
uA |
| VDS=48V , VGS=0V , TJ=55℃ |
--- |
--- |
10 |
|||
|
IGSS |
Gate-Source Leakage Current | VGS=±20V , VDS=0V |
--- |
--- |
±100 |
nA |
|
gfs |
Forward Transconductance | VDS=5V , ID=20A |
--- |
50 |
--- |
S |
|
Rg |
Gate Resistance | VDS=0V , VGS=0V , f=1MHz |
--- |
1.0 |
2 |
Ω |
|
Qg |
Total Gate Charge (10V) | VDS=20V , VGS=10V , ID=40A |
--- |
65 |
85 |
nC |
|
Qgs |
Gate-Source Charge |
--- |
20 |
--- |
||
|
Qgd |
Gate-Drain Charge |
--- |
17 |
--- |
||
|
Td(on) |
Turn-On Delay Time | VDD=30V , VGEN=10V , RG=1Ω, ID=1A ,RL=15Ω. |
--- |
27 |
49 |
ns |
|
Tr |
Rise Time |
--- |
14 |
26 |
||
|
Td(off) |
Turn-Off Delay Time |
--- |
60 |
108 |
||
|
Tf |
Fall Time |
--- |
37 |
67 |
||
|
Ciss |
Input Capacitance | VDS=20V , VGS=0V , f=1MHz |
3450 |
3500 | 4550 |
pF |
|
Coss |
Output Capacitance |
245 |
395 |
652 |
||
|
Crss |
Reverse Transfer Capacitance |
100 |
195 |
250 |
