WSD60N12GDN56 N-channel 120V 70A DFN5X6-8 WINSOK MOSFET

Part Number：WSD60N12GDN56

BVDSS：120V

ID：70A

RDSON：10mΩ

Channel：N-channel

Package：DFN5X6-8

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WINSOK MOSFET product overview

The voltage of WSD60N12GDN56 MOSFET is 120V, the current is 70A, the resistance is 10mΩ, the channel is N-channel, and the package is DFN5X6-8.

WINSOK MOSFET application areas

Medical equipment MOSFET, drones MOSFET, PD power supplies MOSFET, LED power supplies MOSFET, industrial equipment MOSFET.

MOSFET application fieldsWINSOK MOSFET corresponds to other brand material numbers

AOS MOSFET AON6226,AON6294,AON6298,AONS6292,AONS6692,AONS66923.PANJIT MOSFET PSMQC76N12LS1.POTENS Semiconductor MOSFET PDC974X.

MOSFET parameters

Symbol	Parameter	Rating	Units
VDS	Drain-Source Voltage	120	V
VGS	Gate-Source Voltage	±20	V
I_D@T_C=25℃	Continuous Drain Current	70	A
IDP	Pulsed Drain Current	150	A
EAS	Avalanche Energy, Single pulse	53.8	mJ
P_D@T_C=25℃	Total Power Dissipation	140	W
TSTG	Storage Temperature Range	-55 to 150	℃
T_J	Operating Junction Temperature Range	-55 to 150	℃

Symbol	Parameter	Conditions	Min.	Typ.	Max.	Unit
BV_DSS	Drain-Source Breakdown Voltage	V_GS=0V , I_D=250uA	120	---	---	V
	Static Drain-Source On-Resistance	VGS=10V,ID=10A.	---	10	15	mΩ
RDS(ON)	Static Drain-Source On-Resistance	VGS=4.5V,ID=10A.	---	18	25	mΩ
VGS(th)	Gate Threshold Voltage	V_GS=V_DS , I_D =250uA	1.2	---	2.5	V
IDSS	Drain-Source Leakage Current	V_DS=80V , V_GS=0V , T_J=25℃	---	---	1	uA
IGSS	Gate-Source Leakage Current	V_GS=±20V , V_DS=0V	---	---	±100	nA
Q_g	Total Gate Charge (10V)	V_DS=50V , V_GS=10V , I_D=25A	---	33	---	nC
Q_gs	Gate-Source Charge		---	5.6	---
Q_gd	Gate-Drain Charge		---	7.2	---
Td(on)	Turn-On Delay Time	V_DD=50V , V_GS=10V , R_G=2Ω, I_D=25A	---	22	---	ns
T_r	Rise Time		---	10	---
Td(off)	Turn-Off Delay Time		---	85	---
T_f	Fall Time		---	112	---
C_iss	Input Capacitance	V_DS=50V , V_GS=0V , f=1MHz	---	2640	---	pF
Coss	Output Capacitance		---	330	---
C_rss	Reverse Transfer Capacitance		---	11	---
I_S	Continuous Source Current	V_G=V_D=0V , Force Current	---	---	50	A
ISP	Pulsed Source Current	V_G=V_D=0V , Force Current	---	---	150	A
VSD	Diode Forward Voltage	V_GS=0V , I_S=12A , T_J=25℃	---	---	1.3	V
t_rr	Reverse Recovery Time	IF=25A,dI/dt=100A/µs,T_J=25℃	---	62	---	nS
Q_rr	Reverse Recovery Charge	IF=25A,dI/dt=100A/µs,T_J=25℃	---	135	---	nC

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