WSD60N12GDN56 N-channel 120V 70A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET product overview
The voltage of WSD60N12GDN56 MOSFET is 120V, the current is 70A, the resistance is 10mΩ, the channel is N-channel, and the package is DFN5X6-8.
WINSOK MOSFET application areas
Medical equipment MOSFET, drones MOSFET, PD power supplies MOSFET, LED power supplies MOSFET, industrial equipment MOSFET.
MOSFET application fieldsWINSOK MOSFET corresponds to other brand material numbers
AOS MOSFET AON6226,AON6294,AON6298,AONS6292,AONS6692,AONS66923.PANJIT MOSFET PSMQC76N12LS1.POTENS Semiconductor MOSFET PDC974X.
MOSFET parameters
|
Symbol |
Parameter |
Rating |
Units |
|
VDS |
Drain-Source Voltage |
120 |
V |
|
VGS |
Gate-Source Voltage |
±20 |
V |
|
ID@TC=25℃ |
Continuous Drain Current |
70 |
A |
|
IDP |
Pulsed Drain Current |
150 |
A |
|
EAS |
Avalanche Energy, Single pulse |
53.8 |
mJ |
|
PD@TC=25℃ |
Total Power Dissipation |
140 |
W |
|
TSTG |
Storage Temperature Range |
-55 to 150 |
℃ |
|
TJ |
Operating Junction Temperature Range |
-55 to 150 |
℃ |
|
Symbol |
Parameter |
Conditions |
Min. |
Typ. |
Max. |
Unit |
|
BVDSS |
Drain-Source Breakdown Voltage | VGS=0V , ID=250uA |
120 |
--- |
--- |
V |
| Static Drain-Source On-Resistance | VGS=10V,ID=10A. |
--- |
10 |
15 |
mΩ | |
|
RDS(ON) |
VGS=4.5V,ID=10A. |
--- |
18 |
25 |
mΩ | |
|
VGS(th) |
Gate Threshold Voltage | VGS=VDS , ID =250uA |
1.2 |
--- |
2.5 |
V |
|
IDSS |
Drain-Source Leakage Current | VDS=80V , VGS=0V , TJ=25℃ |
--- |
--- |
1 |
uA |
|
IGSS |
Gate-Source Leakage Current | VGS=±20V , VDS=0V |
--- |
--- |
±100 |
nA |
|
Qg |
Total Gate Charge (10V) | VDS=50V , VGS=10V , ID=25A |
--- |
33 |
--- |
nC |
|
Qgs |
Gate-Source Charge |
--- |
5.6 |
--- |
||
|
Qgd |
Gate-Drain Charge |
--- |
7.2 |
--- |
||
|
Td(on) |
Turn-On Delay Time | VDD=50V , VGS=10V ,
RG=2Ω, ID=25A |
--- |
22 |
--- |
ns |
|
Tr |
Rise Time |
--- |
10 |
--- |
||
|
Td(off) |
Turn-Off Delay Time |
--- |
85 |
--- |
||
|
Tf |
Fall Time |
--- |
112 |
--- |
||
|
Ciss |
Input Capacitance | VDS=50V , VGS=0V , f=1MHz |
--- |
2640 |
--- |
pF |
|
Coss |
Output Capacitance |
--- |
330 |
--- |
||
|
Crss |
Reverse Transfer Capacitance |
--- |
11 |
--- |
||
|
IS |
Continuous Source Current | VG=VD=0V , Force Current |
--- |
--- |
50 |
A |
|
ISP |
Pulsed Source Current |
--- |
--- |
150 |
A |
|
|
VSD |
Diode Forward Voltage | VGS=0V , IS=12A , TJ=25℃ |
--- |
--- |
1.3 |
V |
|
trr |
Reverse Recovery Time | IF=25A,dI/dt=100A/µs,TJ=25℃ |
--- |
62 |
--- |
nS |
|
Qrr |
Reverse Recovery Charge |
--- |
135 |
--- |
nC |
