WSD60N10GDN56 N-channel 100V 60A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET product overview
The voltage of WSD60N10GDN56 MOSFET is 100V, the current is 60A, the resistance is 8.5mΩ, the channel is N-channel, and the package is DFN5X6-8.
WINSOK MOSFET application areas
E-cigarettes MOSFET, wireless charging MOSFET, motors MOSFET, drones MOSFET, medical care MOSFET, car chargers MOSFET, controllers MOSFET, digital products MOSFET, small household appliances MOSFET, consumer electronics MOSFET.
MOSFET application fieldsWINSOK MOSFET corresponds to other brand material numbers
AOS MOSFET AON6226,AON6294,AON6298,AONS6292,AONS6692,AONS66923.Onsemi,FAIRCHILD MOSFET NTMFS6B14N.VISHAY MOSFET SiR84DP,SiR87ADP.INFINEON,IR MOSFET BSC19N1NS3G.TOSHIBA MOSFET TPH6R3ANL,TPH8R8ANH.PANJIT MOSFET PJQ5478A.NIKO-SEM MOSFET P81BKA.POTENS Semiconductor MOSFET PDC92X.
MOSFET parameters
|
Symbol |
Parameter |
Rating |
Units |
|
VDS |
Drain-Source Voltage |
100 |
V |
|
VGS |
Gate-Source Voltage |
±20 |
V |
|
ID@TC=25℃ |
Continuous Drain Current |
60 |
A |
|
IDP |
Pulsed Drain Current |
210 |
A |
|
EAS |
Avalanche Energy, Single pulse |
100 |
mJ |
|
PD@TC=25℃ |
Total Power Dissipation |
125 |
W |
|
TSTG |
Storage Temperature Range |
-55 to 150 |
℃ |
|
TJ |
Operating Junction Temperature Range |
-55 to 150 |
℃ |
|
Symbol |
Parameter |
Conditions |
Min. |
Typ. |
Max. |
Unit |
|
BVDSS |
Drain-Source Breakdown Voltage | VGS=0V , ID=250uA |
100 |
--- |
--- |
V |
| Static Drain-Source On-Resistance | VGS=10V,ID=10A. |
--- |
8.5 |
10. 0 |
mΩ | |
|
RDS(ON) |
VGS=4.5V,ID=10A. |
--- |
9.5 |
12. 0 |
mΩ | |
|
VGS(th) |
Gate Threshold Voltage | VGS=VDS , ID =250uA |
1.0 |
--- |
2.5 |
V |
|
IDSS |
Drain-Source Leakage Current | VDS=80V , VGS=0V , TJ=25℃ |
--- |
--- |
1 |
uA |
|
IGSS |
Gate-Source Leakage Current | VGS=±20V , VDS=0V |
--- |
--- |
±100 |
nA |
|
Qg |
Total Gate Charge (10V) | VDS=50V , VGS=10V , ID=25A |
--- |
49.9 |
--- |
nC |
|
Qgs |
Gate-Source Charge |
--- |
6.5 |
--- |
||
|
Qgd |
Gate-Drain Charge |
--- |
12.4 |
--- |
||
|
Td(on) |
Turn-On Delay Time | VDD=50V , VGS=10V ,RG=2.2Ω, ID=25A |
--- |
20.6 |
--- |
ns |
|
Tr |
Rise Time |
--- |
5 |
--- |
||
|
Td(off) |
Turn-Off Delay Time |
--- |
51.8 |
--- |
||
|
Tf |
Fall Time |
--- |
9 |
--- |
||
|
Ciss |
Input Capacitance | VDS=50V , VGS=0V , f=1MHz |
--- |
2604 |
--- |
pF |
|
Coss |
Output Capacitance |
--- |
362 |
--- |
||
|
Crss |
Reverse Transfer Capacitance |
--- |
6.5 |
--- |
||
|
IS |
Continuous Source Current | VG=VD=0V , Force Current |
--- |
--- |
60 |
A |
|
ISP |
Pulsed Source Current |
--- |
--- |
210 |
A |
|
|
VSD |
Diode Forward Voltage | VGS=0V , IS=12A , TJ=25℃ |
--- |
--- |
1.3 |
V |
|
trr |
Reverse Recovery Time | IF=12A,dI/dt=100A/µs,TJ=25℃ |
--- |
60.4 |
--- |
nS |
|
Qrr |
Reverse Recovery Charge |
--- |
106.1 |
--- |
nC |
