WSD6070DN56 N-channel 60V 80A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET product overview
The voltage of WSD6070DN56 MOSFET is 60V, the current is 80A, the resistance is 7.3mΩ, the channel is N-channel, and the package is DFN5X6-8.
WINSOK MOSFET application areas
E-cigarettes MOSFET, wireless charging MOSFET, motors MOSFET, drones MOSFET, medical care MOSFET, car chargers MOSFET, controllers MOSFET, digital products MOSFET, small household appliances MOSFET, consumer electronics MOSFET.
WINSOK MOSFET corresponds to other brand material numbers
POTENS Semiconductor MOSFET PDC696X.
MOSFET parameters
|
Symbol |
Parameter |
Rating |
Units |
|
VDS |
Drain-Source Voltage |
60 |
V |
|
VGS |
Gate-Source Voltage |
±20 |
V |
|
TJ |
Maximum Junction Temperature |
150 |
°C |
|
ID |
Storage Temperature Range |
-55 to 150 |
°C |
|
IS |
Diode Continuous Forward Current,TC=25°C |
80 |
A |
|
ID |
Continuous Drain Current, VGS=10V,TC=25°C |
80 |
A |
| Continuous Drain Current, VGS=10V,TC=100°C |
66 |
A |
|
|
IDM |
Pulsed Drain Current ,TC=25°C |
300 |
A |
|
PD |
Maximum Power Dissipation,TC=25°C |
150 |
W |
| Maximum Power Dissipation,TC=100°C |
75 |
W |
|
|
RθJA |
Thermal Resistance-Junction to Ambient ,t =10s ̀ |
50 |
°C/W |
|
Thermal Resistance-Junction to Ambient ,Steady State |
62.5 |
°C/W |
|
|
RqJC |
Thermal Resistance-Junction to Case |
1 |
°C/W |
|
IAS |
Avalanche Current, Single pulse,L=0.5mH |
30 |
A |
|
EAS |
Avalanche Energy, Single pulse,L=0.5mH |
225 |
mJ |
|
Symbol |
Parameter |
Conditions |
Min. |
Typ. |
Max. |
Unit |
|
BVDSS |
Drain-Source Breakdown Voltage | VGS=0V , ID=250uA |
60 |
--- |
--- |
V |
|
△BVDSS/△TJ |
BVDSS Temperature Coefficient | Reference to 25℃ , ID=1mA |
--- |
0.043 |
--- |
V/℃ |
|
RDS(ON) |
Static Drain-Source On-Resistance2 | VGS=10V , ID=40A |
--- |
7.0 |
9.0 |
mΩ |
|
VGS(th) |
Gate Threshold Voltage | VGS=VDS , ID =250uA |
2.0 |
3.0 |
4.0 |
V |
|
△VGS(th) |
VGS(th) Temperature Coefficient |
--- |
-6.94 |
--- |
mV/℃ | |
|
IDSS |
Drain-Source Leakage Current | VDS=48V , VGS=0V , TJ=25℃ |
--- |
--- |
2 |
uA |
| VDS=48V , VGS=0V , TJ=55℃ |
--- |
--- |
10 |
|||
|
IGSS |
Gate-Source Leakage Current | VGS=±20V , VDS=0V |
--- |
--- |
±100 |
nA |
|
gfs |
Forward Transconductance | VDS=5V , ID=20A |
--- |
50 |
--- |
S |
|
Rg |
Gate Resistance | VDS=0V , VGS=0V , f=1MHz |
--- |
1.0 |
--- |
Ω |
|
Qg |
Total Gate Charge (10V) | VDS=30V , VGS=10V , ID=40A |
--- |
48 |
--- |
nC |
|
Qgs |
Gate-Source Charge |
--- |
17 |
--- |
||
|
Qgd |
Gate-Drain Charge |
--- |
12 |
--- |
||
|
Td(on) |
Turn-On Delay Time | VDD=30V , VGEN=10V , RG=1Ω, ID=1A ,RL=15Ω. |
--- |
16 |
--- |
ns |
|
Tr |
Rise Time |
--- |
10 |
--- |
||
|
Td(off) |
Turn-Off Delay Time |
--- |
40 |
--- |
||
|
Tf |
Fall Time |
--- |
35 |
--- |
||
|
Ciss |
Input Capacitance | VDS=30V , VGS=0V , f=1MHz |
--- |
2680 |
--- |
pF |
|
Coss |
Output Capacitance |
--- |
386 |
--- |
||
|
Crss |
Reverse Transfer Capacitance |
--- |
160 |
--- |
