WSD6060DN56 N-channel 60V 65A DFN5X6-8 WINSOK MOSFET

short description:

Part Number：WSD6060DN56

BVDSS：60V

ID：65A

RDSON：7.5mΩ

Channel：N-channel

Package：DFN5X6-8

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Product Detail

Application

Product Tags

WINSOK MOSFET product overview

The voltage of WSD6060DN56 MOSFET is 60V, the current is 65A, the resistance is 7.5mΩ, the channel is N-channel, and the package is DFN5X6-8.

WINSOK MOSFET application areas

E-cigarettes MOSFET, wireless charging MOSFET, motors MOSFET, drones MOSFET, medical care MOSFET, car chargers MOSFET, controllers MOSFET, digital products MOSFET, small household appliances MOSFET, consumer electronics MOSFET.

WINSOK MOSFET corresponds to other brand material numbers

STMicroelectronics MOSFET STL5DN6F7.PANJIT MOSFET PSMQC73N6NS1.POTENS Semiconductor MOSFET PDC696X.

MOSFET parameters

Symbol	Parameter		Rating	Unit
Common Ratings
VDSS	Drain-Source Voltage		60	V
VGSS	Gate-Source Voltage		±20	V
T_J	Maximum Junction Temperature		150	°C
TSTG	Storage Temperature Range		-55 to 150	°C
I_S	Diode Continuous Forward Current	T_c=25°C	30	A
ID	Continuous Drain Current	T_c=25°C	65	A
ID	Continuous Drain Current	T_c=70°C	42	A
I DM b	Pulse Drain Current Tested	T_c=25°C	250	A
P_D	Maximum Power Dissipation	T_c=25°C	62.5	W
P_D	Maximum Power Dissipation	T_C=70°C	38	W
R_qJL	Thermal Resistance-Junction to Lead	Steady State	2.1	°C/W
RqJA	Thermal Resistance-Junction to Ambient	t £ 10s	45	°C/W
RqJA	Thermal Resistance-Junction to Ambient	Steady State ^b	50	°C/W
I AS^d	Avalanche Current, Single pulse	L=0.5mH	18	A
E AS d	Avalanche Energy, Single pulse	L=0.5mH	81	mJ

Symbol	Parameter	Test Conditions		Min.	Typ.	Max.	Unit
Static Characteristics
BV_DSS	Drain-Source Breakdown Voltage	V_GS=0V, I_DS=250mA		60	-	-	V
IDSS	Zero Gate Voltage Drain Current	V_DS=48V, V_GS=0V		-	-	1	mA
IDSS	Zero Gate Voltage Drain Current						mA
			T_J=85°C	-	-	30
VGS(th)	Gate Threshold Voltage	V_DS=V_GS, I_DS=250mA		1.2	1.5	2.5	V
IGSS	Gate Leakage Current	V_GS=±20V, V_DS=0V		-	-	±100	nA
R DS(ON) 3	Drain-Source On-state Resistance	V_GS=10V, I_DS=20A		-	7.5	10	m W
R DS(ON) 3	Drain-Source On-state Resistance	V_GS=4.5V, I_DS=15 A		-	10	15	m W
Diode Characteristics
V SD	Diode Forward Voltage	I_SD=1A, V_GS=0V		-	0.75	1.2	V
t_rr	Reverse Recovery Time	I_SD=20A, dl_SD/dt=100A/µs		-	42	-	ns
Q_rr	Reverse Recovery Charge	I_SD=20A, dl_SD/dt=100A/µs		-	36	-	nC
Dynamic Characteristics ^3,4
R_G	Gate Resistance	V_GS=0V,V_DS=0V,F=1MHz		-	1.5	-	W
C_iss	Input Capacitance	V_GS=0V, V_DS=30V, F=1.0MHz Ω		-	1340	-	pF
C_oss	Output Capacitance			-	270	-
C_rss	Reverse Transfer Capacitance			-	40	-
td(ON)	Turn-on Delay Time	VDD=30V, IDS=1A, VGEN=10V, RG=6Ω.		-	15	-	ns
t_r	Turn-on Rise Time			-	6	-
td( OFF)	Turn-off Delay Time			-	33	-
t_f	Turn-off Fall Time			-	30	-
Gate Charge Characteristics ^3,4
Q_g	Total Gate Charge	V_DS=30V, V_GS=4.5V, I_DS=20A		-	13	-	nC
Q_g	Total Gate Charge	V_DS=30V, V_GS=10V, I_DS=20A		-	27	-
Q_gth	Threshold Gate Charge			-	4.1	-
Q_gs	Gate-Source Charge			-	5	-
Q_gd	Gate-Drain Charge			-	4.2	-