WSD6040DN56 N-channel 60V 36A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET product overview
The voltage of WSD6040DN56 MOSFET is 60V, the current is 36A, the resistance is 14mΩ, the channel is N-channel, and the package is DFN5X6-8.
WINSOK MOSFET application areas
E-cigarettes MOSFET, wireless charging MOSFET, motors MOSFET, drones MOSFET, medical care MOSFET, car chargers MOSFET, controllers MOSFET, digital products MOSFET, small household appliances MOSFET, consumer electronics MOSFET.
WINSOK MOSFET corresponds to other brand material numbers
AOS MOSFET AON6264C,AON6264E,AON6266E,AONS6662.STMicroelectronics MOSFET STL8DN6LF6AG.PANJIT MOSFET PSMQC12N6LS1.POTENS Semiconductor MOSFET PDC6964X.
MOSFET parameters
|
Symbol |
Parameter |
Rating |
Units |
||
|
VDS |
Drain-Source Voltage |
60 |
V |
||
|
VGS |
Gate-Source Voltage |
±20 |
V |
||
|
ID |
Continuous Drain Current | TC=25°C |
36 |
A |
|
| TC=100°C |
22 |
||||
|
ID |
Continuous Drain Current | TA=25°C |
8.4 |
A |
|
| TA=100°C |
6.8 |
||||
|
IDM a |
Pulsed Drain Current | TC=25°C |
140 |
A |
|
|
PD |
Maximum Power Dissipation | TC=25°C |
37.8 |
W |
|
| TC=100°C |
15.1 |
||||
|
PD |
Maximum Power Dissipation | TA=25°C |
2.08 |
W |
|
| TA=70°C |
1.33 |
||||
|
IAS c |
Avalanche Current, Single pulse |
L=0.5mH |
16 |
A |
|
|
EAS c |
Single Pulse Avalanche Energy |
L=0.5mH |
64 |
mJ |
|
|
IS |
Diode Continuous Forward Current |
TC=25°C |
18 |
A |
|
|
TJ |
Maximum Junction Temperature |
150 |
℃ | ||
|
TSTG |
Storage Temperature Range |
-55 to 150 |
℃ | ||
|
RθJAb |
Thermal Resistance Junction to ambient |
Steady State |
60 |
℃/W | |
|
RθJC |
Thermal Resistance-Junction to Case |
Steady State |
3.3 |
℃/W | |
|
Symbol |
Parameter |
Conditions |
Min. |
Typ. |
Max. |
Unit |
|
| Static | |||||||
|
V(BR)DSS |
Drain-Source Breakdown Voltage |
VGS = 0V, ID = 250μA |
60 |
V |
|||
|
IDSS |
Zero Gate Voltage Drain Current |
VDS = 48 V, VGS = 0V |
1 |
µA |
|||
|
TJ=85°C |
30 |
||||||
|
IGSS |
Gate Leakage Current |
VGS = ±20V, VDS = 0V |
±100 |
nA |
|||
| On Characteristics | |||||||
|
VGS(TH) |
Gate Threshold Voltage |
VGS = VDS, IDS = 250µA |
1 |
1.6 |
2.5 |
V |
|
|
RDS(on)d |
Drain-Source On-state Resistance |
VGS = 10V, ID = 25A |
14 | 17.5 |
mΩ |
||
|
VGS = 4.5V, ID = 20A |
19 |
22 |
mΩ |
||||
| Switching | |||||||
|
Qg |
Total Gate Charge |
VDS=30V VGS=10V ID=25A |
42 |
nC |
|||
|
Qgs |
Gate-Sour Charge |
6.4 |
nC |
||||
|
Qgd |
Gate-Drain Charge |
9.6 |
nC |
||||
|
td (on) |
Turn-on Delay Time |
VGEN=10V VDD=30V ID=1A RG=6Ω RL=30Ω |
17 |
ns |
|||
|
tr |
Turn-on Rise Time |
9 |
ns |
||||
|
td(off) |
Turn-off Delay Time | 58 |
ns |
||||
|
tf |
Turn-off Fall Time | 14 |
ns |
||||
|
Rg |
Gat resistance |
VGS=0V, VDS=0V, f=1MHz |
1.5 |
Ω |
|||
| Dynamic | |||||||
|
Ciss |
In Capacitance |
VGS=0V VDS=30V f=1MHz |
2100 |
pF |
|||
|
Coss |
Out Capacitance | 140 |
pF |
||||
|
Crss |
Reverse Transfer Capacitance | 100 |
pF |
||||
| Drain-Source Diode Characteristics and Maximum Ratings | |||||||
|
IS |
Continuous Source Current |
VG=VD=0V , Force Current |
18 |
A |
|||
|
ISM |
Pulsed Source Current3 |
35 |
A |
||||
|
VSD d |
Diode Forward Voltage |
ISD = 20A , VGS=0V |
0.8 |
1.3 |
V |
||
|
trr |
Reverse Recovery Time |
ISD=25A, dlSD/dt=100A/µs |
27 |
ns |
|||
|
Qrr |
Reverse Recovery Charge | 33 |
nC |
||||
