WSD6040DN56 N-channel 60V 36A DFN5X6-8 WINSOK MOSFET

Part Number：WSD6040DN56

BVDSS：60V

ID：36A

RDSON：14mΩ

Channel：N-channel

Package：DFN5X6-8

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WINSOK MOSFET product overview

The voltage of WSD6040DN56 MOSFET is 60V, the current is 36A, the resistance is 14mΩ, the channel is N-channel, and the package is DFN5X6-8.

WINSOK MOSFET application areas

E-cigarettes MOSFET, wireless charging MOSFET, motors MOSFET, drones MOSFET, medical care MOSFET, car chargers MOSFET, controllers MOSFET, digital products MOSFET, small household appliances MOSFET, consumer electronics MOSFET.

WINSOK MOSFET corresponds to other brand material numbers

AOS MOSFET AON6264C,AON6264E,AON6266E,AONS6662.STMicroelectronics MOSFET STL8DN6LF6AG.PANJIT MOSFET PSMQC12N6LS1.POTENS Semiconductor MOSFET PDC6964X.

MOSFET parameters

Symbol	Parameter			Rating	Units
VDS	Drain-Source Voltage			60	V
VGS	Gate-Source Voltage			±20	V
ID	Continuous Drain Current	TC=25°C		36	A
		TC=100°C		22
ID	Continuous Drain Current	TA=25°C		8.4	A
		TA=100°C		6.8
IDM ^a	Pulsed Drain Current	TC=25°C		140	A
PD	Maximum Power Dissipation	TC=25°C		37.8	W
		TC=100°C		15.1
PD	Maximum Power Dissipation	TA=25°C		2.08	W
		TA=70°C		1.33
I_ASc	Avalanche Current, Single pulse		L=0.5mH	16	A
EAS ^c	Single Pulse Avalanche Energy		L=0.5mH	64	mJ
IS	Diode Continuous Forward Current		TC=25°C	18	A
TJ	Maximum Junction Temperature			150	℃
TSTG	Storage Temperature Range			-55 to 150	℃
RθJAb	Thermal Resistance Junction to ambient		Steady State	60	℃/W
RθJC	Thermal Resistance-Junction to Case		Steady State	3.3	℃/W

Symbol	Parameter	Conditions		Min.	Typ.	Max.	Unit
Static
V(BR)DSS	Drain-Source Breakdown Voltage	VGS = 0V, ID = 250μA		60			V
IDSS	Zero Gate Voltage Drain Current	VDS = 48 V, VGS = 0V				1	µA
IDSS	Zero Gate Voltage Drain Current		T_J=85°C			30	µA
IGSS	Gate Leakage Current	VGS = ±20V, VDS = 0V				±100	nA
On Characteristics
VGS(TH)	Gate Threshold Voltage	VGS = VDS, IDS = 250µA		1	1.6	2.5	V
RDS(on)^d	Drain-Source On-state Resistance	VGS = 10V, ID = 25A			14	17.5	mΩ
RDS(on)^d	Drain-Source On-state Resistance	VGS = 4.5V, ID = 20A			19	22	mΩ
Switching
Qg	Total Gate Charge	VDS=30V VGS=10V ID=25A			42		nC
Qgs	Gate-Sour Charge				6.4		nC
Qgd	Gate-Drain Charge				9.6		nC
td (on)	Turn-on Delay Time	VGEN=10V VDD=30V ID=1A RG=6Ω RL=30Ω			17		ns
tr	Turn-on Rise Time				9		ns
td(off)	Turn-off Delay Time				58		ns
tf	Turn-off Fall Time				14		ns
Rg	Gat resistance	VGS=0V, VDS=0V, f=1MHz			1.5		Ω
Dynamic
Ciss	In Capacitance	VGS=0V VDS=30V f=1MHz			2100		pF
Coss	Out Capacitance				140		pF
Crss	Reverse Transfer Capacitance				100		pF
Drain-Source Diode Characteristics and Maximum Ratings
IS	Continuous Source Current	VG=VD=0V , Force Current				18	A
ISM	Pulsed Source Current3	VG=VD=0V , Force Current				35	A
VSD ^d	Diode Forward Voltage	ISD = 20A , VGS=0V			0.8	1.3	V
trr	Reverse Recovery Time	I_SD=25A, dl_SD/dt=100A/µs			27		ns
Qrr	Reverse Recovery Charge	I_SD=25A, dl_SD/dt=100A/µs			33		nC

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