WSD45N10GDN56 N-channel 100V 45A DFN5X6-8 WINSOK MOSFET

Part Number：WSD45N10GDN56

BVDSS：100V

ID：45A

RDSON：14.5mΩ

Channel：N-channel

Package：DFN5X6-8

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WINSOK MOSFET product overview

The voltage of WSD45N10GDN56 MOSFET is 100V, the current is 45A, the resistance is 14.5mΩ, the channel is N-channel, and the package is DFN5X6-8.

WINSOK MOSFET application areas

E-cigarettes MOSFET, wireless charging MOSFET, motors MOSFET, drones MOSFET, medical care MOSFET, car chargers MOSFET, controllers MOSFET, digital products MOSFET, small household appliances MOSFET, consumer electronics MOSFET.

WINSOK MOSFET corresponds to other brand material numbers

AOS MOSFET AON6226,AON6294,AON6298,AONS6292,AONS6692,AONS66923.PANJIT MOSFET PJQ5476AL.POTENS Semiconductor MOSFET PDC966X.

MOSFET parameters

Symbol	Parameter	Rating	Units
VDS	Drain-Source Voltage	100	V
VGS	Gate-Source Voltage	±20	V
I_D@T_C=25℃	Continuous Drain Current, V_GS @ 10V	45	A
I_D@T_C=100℃	Continuous Drain Current, V_GS @ 10V	33	A
I_D@T_A=25℃	Continuous Drain Current, V_GS @ 10V	12	A
I_D@T_A=70℃	Continuous Drain Current, V_GS @ 10V	9.6	A
IDMa	Pulsed Drain Current	130	A
EASb	Single Pulse Avalanche Energy	169	mJ
IASb	Avalanche Current	26	A
P_D@T_C=25℃	Total Power Dissipation	95	W
P_D@T_A=25℃	Total Power Dissipation	5.0	W
TSTG	Storage Temperature Range	-55 to 150	℃
T_J	Operating Junction Temperature Range	-55 to 150	℃

Symbol	Parameter	Conditions	Min.	Typ.	Max.	Unit
BV_DSS	Drain-Source Breakdown Voltage	V_GS=0V , I_D=250uA	100	---	---	V
△BVDSS/△TJ	BVDSS Temperature Coefficient	Reference to 25℃ , I_D=1mA	---	0.0	---	V/℃
RDS(ON)^d	Static Drain-Source On-Resistance²	V_GS=10V , I_D=26A	---	14.5	17.5	mΩ
VGS(th)	Gate Threshold Voltage	V_GS=V_DS , I_D =250uA	2.0	3.0	4.0	V
△V_GS(th)	V_GS(th)Temperature Coefficient	V_GS=V_DS , I_D =250uA	---	-5		mV/℃
IDSS	Drain-Source Leakage Current	V_DS=80V , V_GS=0V , T_J=25℃	---	-	1	uA
IDSS	Drain-Source Leakage Current	V_DS=80V , V_GS=0V , T_J=55℃	---	-	30	uA
IGSS	Gate-Source Leakage Current	V_GS=±20V , V_DS=0V	---	-	±100	nA
Rge	Gate Resistance	V_DS=0V , V_GS=0V , f=1MHz	---	1.0	---	Ω
Qge	Total Gate Charge (10V)	V_DS=50V , V_GS=10V , I_D=26A	---	42	59	nC
Qgse	Gate-Source Charge		---	12	--
Qgde	Gate-Drain Charge		---	12	---
Td(on)^e	Turn-On Delay Time	V_DD=30V , V_GEN=10V , R_G=6Ω I_D=1A ,RL=30Ω	---	19	35	ns
Tre	Rise Time		---	9	17
Td(off)^e	Turn-Off Delay Time		---	36	65
Tfe	Fall Time		---	22	40
Cisse	Input Capacitance	V_DS=30V , V_GS=0V , f=1MHz	---	1800	---	pF
Cosse	Output Capacitance		---	215	---
Crsse	Reverse Transfer Capacitance		---	42	---

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