WSD45N10GDN56 N-channel 100V 45A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET product overview
The voltage of WSD45N10GDN56 MOSFET is 100V, the current is 45A, the resistance is 14.5mΩ, the channel is N-channel, and the package is DFN5X6-8.
WINSOK MOSFET application areas
E-cigarettes MOSFET, wireless charging MOSFET, motors MOSFET, drones MOSFET, medical care MOSFET, car chargers MOSFET, controllers MOSFET, digital products MOSFET, small household appliances MOSFET, consumer electronics MOSFET.
WINSOK MOSFET corresponds to other brand material numbers
AOS MOSFET AON6226,AON6294,AON6298,AONS6292,AONS6692,AONS66923.PANJIT MOSFET PJQ5476AL.POTENS Semiconductor MOSFET PDC966X.
MOSFET parameters
|
Symbol |
Parameter |
Rating |
Units |
|
VDS |
Drain-Source Voltage |
100 |
V |
|
VGS |
Gate-Source Voltage |
±20 |
V |
|
ID@TC=25℃ |
Continuous Drain Current, VGS @ 10V |
45 |
A |
|
ID@TC=100℃ |
Continuous Drain Current, VGS @ 10V |
33 |
A |
|
ID@TA=25℃ |
Continuous Drain Current, VGS @ 10V |
12 |
A |
|
ID@TA=70℃ |
Continuous Drain Current, VGS @ 10V |
9.6 |
A |
|
IDMa |
Pulsed Drain Current |
130 |
A |
|
EASb |
Single Pulse Avalanche Energy |
169 |
mJ |
|
IASb |
Avalanche Current |
26 |
A |
|
PD@TC=25℃ |
Total Power Dissipation |
95 |
W |
|
PD@TA=25℃ |
Total Power Dissipation |
5.0 |
W |
|
TSTG |
Storage Temperature Range |
-55 to 150 |
℃ |
|
TJ |
Operating Junction Temperature Range |
-55 to 150 |
℃ |
|
Symbol |
Parameter |
Conditions |
Min. |
Typ. |
Max. |
Unit |
|
BVDSS |
Drain-Source Breakdown Voltage | VGS=0V , ID=250uA |
100 |
--- |
--- |
V |
|
△BVDSS/△TJ |
BVDSS Temperature Coefficient | Reference to 25℃ , ID=1mA |
--- |
0.0 |
--- |
V/℃ |
|
RDS(ON)d |
Static Drain-Source On-Resistance2 | VGS=10V , ID=26A |
--- |
14.5 |
17.5 |
mΩ |
|
VGS(th) |
Gate Threshold Voltage | VGS=VDS , ID =250uA |
2.0 |
3.0 |
4.0 |
V |
|
△VGS(th) |
VGS(th) Temperature Coefficient |
--- |
-5 | mV/℃ | ||
|
IDSS |
Drain-Source Leakage Current | VDS=80V , VGS=0V , TJ=25℃ |
--- |
- | 1 |
uA |
| VDS=80V , VGS=0V , TJ=55℃ |
--- |
- | 30 | |||
|
IGSS |
Gate-Source Leakage Current | VGS=±20V , VDS=0V |
--- |
- | ±100 |
nA |
|
Rge |
Gate Resistance | VDS=0V , VGS=0V , f=1MHz |
--- |
1.0 |
--- |
Ω |
|
Qge |
Total Gate Charge (10V) | VDS=50V , VGS=10V , ID=26A |
--- |
42 |
59 |
nC |
|
Qgse |
Gate-Source Charge |
--- |
12 |
-- | ||
|
Qgde |
Gate-Drain Charge |
--- |
12 |
--- |
||
|
Td(on)e |
Turn-On Delay Time | VDD=30V , VGEN=10V , RG=6Ω
ID=1A ,RL=30Ω |
--- |
19 |
35 |
ns |
|
Tre |
Rise Time |
--- |
9 |
17 |
||
|
Td(off)e |
Turn-Off Delay Time |
--- |
36 |
65 |
||
|
Tfe |
Fall Time |
--- |
22 |
40 |
||
|
Cisse |
Input Capacitance | VDS=30V , VGS=0V , f=1MHz |
--- |
1800 |
--- |
pF |
|
Cosse |
Output Capacitance |
--- |
215 |
--- |
||
|
Crsse |
Reverse Transfer Capacitance |
--- |
42 |
--- |
