WSD4280DN22 Dual P-channel -15V -4.6A DFN2X2-6L WINSOK MOSFET

Part Number：WSD4280DN22

BVDSS：-15V

ID：-4.6A

RDSON：47mΩ

Channel：Dual P-channel

Package：DFN2X2-6L

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WINSOK MOSFET product overview

The voltage of WSD4280DN22 MOSFET is -15V, the current is -4.6A, the resistance is 47mΩ, the channel is Dual P-channel, and the package is DFN2X2-6L.

WINSOK MOSFET application areas

Bidirectional blocking switch; DC-DC conversion applications;Li-battery charging;E-cigarette MOSFET, wireless charging MOSFET, car charging MOSFET, controller MOSFET, digital product MOSFET, small household appliances MOSFET, consumer electronics MOSFET.

WINSOK MOSFET corresponds to other brand material numbers

PANJIT MOSFET PJQ2815

MOSFET parameters

Symbol	Parameter	Rating	Units
VDS	Drain-Source Voltage	-15	V
VGS	Gate-Source Voltage	±8	V
I_D@T_c=25℃	Continuous Drain Current, V_GS = -4.5V¹	-4.6	A
IDM	300μS Pulsed Drain Current, (V_GS =-4.5V)	-15	A
P_D	Power Dissipation Derating above T_A= 25°C (Note 2)	1.9	W
TSTG,T_J	Storage Temperature Range	-55 to 150	℃
RθJA	Thermal Resistance Junction-ambient ¹	65	℃/W
RθJC	Thermal Resistance Junction-Case¹	50	℃/W

Electrical Characteristics (TJ=25 ℃, unless otherwise noted)

Symbol	Parameter	Conditions	Min.	Typ.	Max.	Unit
BV_DSS	Drain-Source Breakdown Voltage	V_GS=0V , I_D=-250uA	-15	---	---	V
△BVDSS/△TJ	BVDSS Temperature Coefficient	Reference to 25℃ , I_D=-1mA	---	-0.01	---	V/℃
RDS(ON)	Static Drain-Source On-Resistance²	V_GS=-4.5V , I_D=-1A	---	47	61	mΩ
		V_GS=-2.5V , I_D=-1A	---	61	80
		V_GS=-1.8V , I_D=-1A	---	90	150
VGS(th)	Gate Threshold Voltage	V_GS=V_DS , I_D =-250uA	-0.4	-0.62	-1.2	V
△V_GS(th)	V_GS(th)Temperature Coefficient	V_GS=V_DS , I_D =-250uA	---	3.13	---	mV/℃
IDSS	Drain-Source Leakage Current	V_DS=-10V , V_GS=0V , T_J=25℃	---	---	-1	uA
IDSS	Drain-Source Leakage Current	V_DS=-10V , V_GS=0V , T_J=55℃	---	---	-5	uA
IGSS	Gate-Source Leakage Current	V_GS=±12V , V_DS=0V	---	---	±100	nA
gfs	Forward Transconductance	V_DS=-5V , I_D=-1A	---	10	---	S
R_g	Gate Resistance	V_DS=0V , V_GS=0V , f=1MHz	---	2	---	Ω
Q_g	Total Gate Charge (-4.5V)	V_DS=-10V , V_GS=-4.5V , I_D=-4.6A	---	9.5	---	nC
Q_gs	Gate-Source Charge		---	1.4	---
Q_gd	Gate-Drain Charge		---	2.3	---
Td(on)	Turn-On Delay Time	V_DD=-10V ,V_GS=-4.5V , R_G=1Ω I_D=-3.9A,	---	15	---	ns
T_r	Rise Time		---	16	---
Td(off)	Turn-Off Delay Time		---	30	---
T_f	Fall Time		---	10	---
C_iss	Input Capacitance	V_DS=-10V , V_GS=0V , f=1MHz	---	781	---	pF
Coss	Output Capacitance		---	98	---
C_rss	Reverse Transfer Capacitance		---	96	---

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