WSD4280DN22 Dual P-channel -15V -4.6A DFN2X2-6L WINSOK MOSFET
WINSOK MOSFET product overview
The voltage of WSD4280DN22 MOSFET is -15V, the current is -4.6A, the resistance is 47mΩ, the channel is Dual P-channel, and the package is DFN2X2-6L.
WINSOK MOSFET application areas
Bidirectional blocking switch; DC-DC conversion applications;Li-battery charging;E-cigarette MOSFET, wireless charging MOSFET, car charging MOSFET, controller MOSFET, digital product MOSFET, small household appliances MOSFET, consumer electronics MOSFET.
WINSOK MOSFET corresponds to other brand material numbers
PANJIT MOSFET PJQ2815
MOSFET parameters
|
Symbol |
Parameter |
Rating |
Units |
|
VDS |
Drain-Source Voltage |
-15 |
V |
|
VGS |
Gate-Source Voltage |
±8 |
V |
|
ID@Tc=25℃ |
Continuous Drain Current, VGS = -4.5V1 |
-4.6 |
A |
|
IDM |
300μS Pulsed Drain Current, (VGS =-4.5V) |
-15 |
A |
|
PD |
Power Dissipation Derating above TA = 25°C (Note 2) |
1.9 |
W |
|
TSTG,TJ |
Storage Temperature Range |
-55 to 150 |
℃ |
|
RθJA |
Thermal Resistance Junction-ambient 1 |
65 |
℃/W |
|
RθJC |
Thermal Resistance Junction-Case1 |
50 |
℃/W |
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
|
Symbol |
Parameter |
Conditions |
Min. |
Typ. |
Max. |
Unit |
|
BVDSS |
Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA |
-15 |
--- |
--- |
V |
|
△BVDSS/△TJ |
BVDSS Temperature Coefficient | Reference to 25℃ , ID=-1mA |
--- |
-0.01 |
--- |
V/℃ |
|
RDS(ON) |
Static Drain-Source On-Resistance2 | VGS=-4.5V , ID=-1A |
--- |
47 |
61 |
mΩ |
| VGS=-2.5V , ID=-1A |
--- |
61 |
80 |
|||
| VGS=-1.8V , ID=-1A |
--- |
90 |
150 |
|||
|
VGS(th) |
Gate Threshold Voltage | VGS=VDS , ID =-250uA |
-0.4 |
-0.62 |
-1.2 |
V |
|
△VGS(th) |
VGS(th) Temperature Coefficient |
--- |
3.13 |
--- |
mV/℃ | |
|
IDSS |
Drain-Source Leakage Current | VDS=-10V , VGS=0V , TJ=25℃ |
--- |
--- |
-1 |
uA |
| VDS=-10V , VGS=0V , TJ=55℃ |
--- |
--- |
-5 |
|||
|
IGSS |
Gate-Source Leakage Current | VGS=±12V , VDS=0V |
--- |
--- |
±100 |
nA |
|
gfs |
Forward Transconductance | VDS=-5V , ID=-1A |
--- |
10 |
--- |
S |
|
Rg |
Gate Resistance | VDS=0V , VGS=0V , f=1MHz |
--- |
2 |
--- |
Ω |
|
Qg |
Total Gate Charge (-4.5V) |
VDS=-10V , VGS=-4.5V , ID=-4.6A |
--- |
9.5 |
--- |
nC |
|
Qgs |
Gate-Source Charge |
--- |
1.4 |
--- |
||
|
Qgd |
Gate-Drain Charge |
--- |
2.3 |
--- |
||
|
Td(on) |
Turn-On Delay Time | VDD=-10V ,VGS=-4.5V , RG=1Ω
ID=-3.9A, |
--- |
15 |
--- |
ns |
|
Tr |
Rise Time |
--- |
16 |
--- |
||
|
Td(off) |
Turn-Off Delay Time |
--- |
30 |
--- |
||
|
Tf |
Fall Time |
--- |
10 |
--- |
||
|
Ciss |
Input Capacitance | VDS=-10V , VGS=0V , f=1MHz |
--- |
781 |
--- |
pF |
|
Coss |
Output Capacitance |
--- |
98 |
--- |
||
|
Crss |
Reverse Transfer Capacitance |
--- |
96 |
--- |
