WSD4098 Dual N-Channel 40V 22A DFN5*6-8 WINSOK MOSFET

short description:

This is a magnetic wireless power bank that automatically recognizes Apple phones and does not require button activation. It integrates 2.0/QC3.0/PA2.0/PD3.0/SCP/AFC input and output fast charging protocols. It is a wireless power bank product that is compatible with Apple/Samsung mobile phone synchronous boost/step-down converters, Li battery charging management, digital tube power indication, magnetic wireless charging and other functions.

Model Number: WSD4098

BVDSS: 40V

RDSON: 7.8mΩ

ID: 22A

Channel: Dual N-Channel

Package: DFN5*6-8

Product Summery: The voltage of WSD4098 MOSFET is 40V, the current is22A, the resistance is 7.8mΩ, the channel is Dual N-Channel, and the package is DFN5*6-8.

Applications: E-cigarettes, wireless charging, motors, drones, medical care, car chargers, controllers, digital products, small household appliances, consumer electronics.

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Product Detail

Application

Product Tags

General Description

The WSD4098DN56 is the highest performance trench Dual N-Ch MOSFET with extreme high cell density,which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The WSD4098DN56 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved.

Features

Advanced high cell density Trench technology,Super Low Gate Charge,Excellent CdV/dt effect decline,100% EAS Guaranteed,Green Device Available

Applications

High Frequency Point-of-Load Synchronous,Buck Converter for MB/NB/UMPC/VGA,Networking DC-DC Power System,Load Switch,E-cigarettes, wireless charging, motors, drones, medical care, car chargers, controllers, digital products, small household appliances, consumer electronics.

corresponding material number

AOS AON6884

Important parameters

Symbol	Parameter		Rating	Unit
Common Ratings
VDSS	Drain-Source Voltage		40	V
VGSS	Gate-Source Voltage		±20	V
TJ	Maximum Junction Temperature		150	°C
TSTG	Storage Temperature Range		-55 to 150	°C
IS	Diode Continuous Forward Current	TA=25°C	11.4	A
ID	Continuous Drain Current	TA=25°C	22	A
ID	Continuous Drain Current			A
		TA=70°C	22
I DM b	Pulse Drain Current Tested	TA=25°C	88	A
PD	Maximum Power Dissipation	T. =25°C	25	W
PD	Maximum Power Dissipation	TC=70°C	10	W
RqJL	Thermal Resistance-Junction to Lead	Steady State	5	°C/W
RqJA	Thermal Resistance-Junction to Ambient	t £ 10s	45	°C/W
RqJA	Thermal Resistance-Junction to Ambient	Steady State b	90	°C/W
I AS d	Avalanche Current, Single pulse	L=0.5mH	28	A
E AS d	Avalanche Energy, Single pulse	L=0.5mH	39.2	mJ

Symbol	Parameter	Test Conditions		Min.	Typ.	Max.	Unit
Static Characteristics
BVDSS	Drain-Source Breakdown Voltage	VGS=0V, IDS=250mA		40	-	-	V
IDSS	Zero Gate Voltage Drain Current	VDS=32V, VGS=0V		-	-	1	mA
IDSS	Zero Gate Voltage Drain Current						mA
			TJ=85°C	-	-	30
VGS(th)	Gate Threshold Voltage	VDS=VGS, IDS=250mA		1.2	1.8	2.5	V
IGSS	Gate Leakage Current	VGS=±20V, VDS=0V		-	-	±100	nA
R DS(ON) e	Drain-Source On-state Resistance	VGS=10V, IDS=14A		-	6.8	7.8	m W
R DS(ON) e	Drain-Source On-state Resistance	VGS=4.5V, IDS=12 A		-	9.0	11	m W
Diode Characteristics
V SD e	Diode Forward Voltage	ISD=1A, VGS=0V		-	0.75	1.1	V
trr	Reverse Recovery Time	ISD=20A, dlSD /dt=100A/µs		-	23	-	ns
Qrr	Reverse Recovery Charge	ISD=20A, dlSD /dt=100A/µs		-	13	-	nC
Dynamic Characteristics f
RG	Gate Resistance	VGS=0V,VDS=0V,F=1MHz		-	2.5	-	W
Ciss	Input Capacitance	VGS=0V, VDS=20V, Frequency=1.0MHz		-	1370	1781	pF
Coss	Output Capacitance			-	317	-
Crss	Reverse Transfer Capacitance			-	96	-
td(ON)	Turn-on Delay Time	VDD =20V, RL=20W, IDS=1A, VGEN=10V, RG=6W		-	13.8	-	ns
tr	Turn-on Rise Time			-	8	-
td( OFF)	Turn-off Delay Time			-	30	-
tf	Turn-off Fall Time			-	21	-
Gate Charge Characteristics f
Qg	Total Gate Charge	VDS=20V, VGS=10V, IDS=6A		-	23	28	nC
Qg	Total Gate Charge	VDS=20V, VGS=4.5V, IDS=6A		-	22	-
Qgth	Threshold Gate Charge			-	2.6	-
Qgs	Gate-Source Charge			-	4.7	-
Qgd	Gate-Drain Charge			-	3	-