WSD4080DN56 N-channel 40V 85A DFN5X6-8 WINSOK MOSFET

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WSD4080DN56 N-channel 40V 85A DFN5X6-8 WINSOK MOSFET

short description:

Part Number:WSD4080DN56

BVDSS:40V

ID:85A

RDSON:4.5mΩ  

Channel:N-channel

Package:DFN5X6-8


Product Detail

Application

Product Tags

WINSOK MOSFET product overview

The voltage of WSD4080DN56 MOSFET is 40V, the current is 85A, the resistance is 4.5mΩ, the channel is N-channel, and the package is DFN5X6-8.

WINSOK MOSFET application areas

Small appliances MOSFET, handheld appliances MOSFET, motors MOSFET.

WINSOK MOSFET corresponds to other brand material numbers

AOS MOSFET AON623.STMicroelectronics MOSFET STL52DN4LF7AG,STL64DN4F7AG,STL64N4F7AG.PANJIT MOSFET PJQ5442.POTENS Semiconductor MOSFET PDC496X.

MOSFET parameters

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

40

V

VGS

Gate-Source Voltage

±20

V

ID@TC=25℃

Continuous Drain Current, VGS @ 10V1

85

A

ID@TC=100℃

Continuous Drain Current, VGS @ 10V1

58

A

IDM

Pulsed Drain Current2

100

A

EAS

Single Pulse Avalanche Energy3

110.5

mJ

IAS

Avalanche Current

47

A

PD@TC=25℃

Total Power Dissipation4

52.1

W

TSTG

Storage Temperature Range

-55 to 150

TJ

Operating Junction Temperature Range

-55 to 150

RθJA

Thermal Resistance Junction-Ambient 1

62

℃/W

RθJC

Thermal Resistance Junction-Case1

2.4

℃/W

 

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source Breakdown Voltage VGS=0V , ID=250uA

40

---

---

V

RDS(ON)

Static Drain-Source On-Resistance2 VGS=10V , ID=10A

---

4.5

6.5

mΩ
VGS=4.5V , ID=5A

---

6.4

8.5

VGS(th)

Gate Threshold Voltage VGS=VDS , ID =250uA

1.0

---

2.5

V

IDSS

Drain-Source Leakage Current VDS=32V , VGS=0V , TJ=25℃

---

---

1

uA

VDS=32V , VGS=0V , TJ=55℃

---

---

5

IGSS

Gate-Source Leakage Current VGS=±20V , VDS=0V

---

---

±100

nA

gfs

Forward Transconductance VDS=10V , ID=5A

---

27

---

S

Qg

Total Gate Charge (4.5V) VDS=20V , VGS=4.5V , ID=10A

---

20

---

nC

Qgs

Gate-Source Charge

---

5.8

---

Qgd

Gate-Drain Charge

---

9.5

---

Td(on)

Turn-On Delay Time VDD=15V , VGS=10V RG=3.3ΩID=1A

---

15.2

---

ns

Tr

Rise Time

---

8.8

---

Td(off)

Turn-Off Delay Time

---

74

---

Tf

Fall Time

---

7

---

Ciss

Input Capacitance VDS=15V , VGS=0V , f=1MHz

---

2354

---

pF

Coss

Output Capacitance

---

215

---

Crss

Reverse Transfer Capacitance

---

175

---

IS

Continuous Source Current1,5 VG=VD=0V , Force Current

---

---

70

A

VSD

Diode Forward Voltage2 VGS=0V , IS=1A , TJ=25℃

---

---

1

V


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