WSD4076DN56 N-channel 40V 76A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET product overview
The voltage of WSD4076DN56 MOSFET is 40V, the current is 76A, the resistance is 6.9mΩ, the channel is N-channel, and the package is DFN5X6-8.
WINSOK MOSFET application areas
Small appliances MOSFET, handheld appliances MOSFET, motors MOSFET.
WINSOK MOSFET corresponds to other brand material numbers
STMicroelectronics MOSFET STL52DN4LF7AG,STL64DN4F7AG,STL64N4F7AG.
PANJIT MOSFET PJQ5442.
POTENS Semiconductor MOSFET PDC496X.
MOSFET parameters
|
Symbol |
Parameter |
Rating |
Units |
|
VDS |
Drain-Source Voltage |
40 |
V |
|
VGS |
Gate-Source Voltage |
±20 |
V |
|
ID@TC=25℃ |
Continuous Drain Current, VGS @ 10V |
76 |
A |
|
ID@TC=100℃ |
Continuous Drain Current, VGS @ 10V |
33 |
A |
|
IDM |
Pulsed Drain Currenta |
125 |
A |
|
EAS |
Single Pulse Avalanche Energyb |
31 |
mJ |
|
IAS |
Avalanche Current |
31 |
A |
|
PD@Ta=25℃ |
Total Power Dissipation |
1.7 |
W |
|
TSTG |
Storage Temperature Range |
-55 to 150 |
℃ |
|
TJ |
Operating Junction Temperature Range |
-55 to 150 |
℃ |
|
Symbol |
Parameter |
Conditions |
Min. |
Typ. |
Max. |
Unit |
|
BVDSS |
Drain-Source Breakdown Voltage | VGS=0V , ID=250uA |
40 |
--- |
--- |
V |
|
△BVDSS/△TJ |
BVDSS Temperature Coefficient | Reference to 25℃ , ID=1mA |
--- |
0.043 |
--- |
V/℃ |
|
RDS(ON) |
Static Drain-Source On-Resistance2 | VGS=10V , ID=12A |
--- |
6.9 |
8.5 |
mΩ |
|
RDS(ON) |
Static Drain-Source On-Resistance2 | VGS=4.5V , ID=10A |
--- |
10 |
15 |
mΩ |
|
VGS(th) |
Gate Threshold Voltage | VGS=VDS , ID =250uA |
1.5 |
1.6 |
2.5 |
V |
|
△VGS(th) |
VGS(th) Temperature Coefficient |
--- |
-6.94 |
--- |
mV/℃ | |
|
IDSS |
Drain-Source Leakage Current | VDS=32V , VGS=0V , TJ=25℃ |
--- |
--- |
2 |
uA |
| VDS=32V , VGS=0V , TJ=55℃ |
--- |
--- |
10 |
|||
|
IGSS |
Gate-Source Leakage Current | VGS=±20V , VDS=0V |
--- |
--- |
±100 |
nA |
|
gfs |
Forward Transconductance | VDS=5V , ID=20A |
--- |
18 |
--- |
S |
|
Rg |
Gate Resistance | VDS=0V , VGS=0V , f=1MHz |
--- |
1.7 |
--- |
Ω |
|
Qg |
Total Gate Charge (10V) | VDS=20V , VGS=4.5V , ID=12A |
--- |
5.8 |
--- |
nC |
|
Qgs |
Gate-Source Charge |
--- |
3.0 |
--- |
||
|
Qgd |
Gate-Drain Charge |
--- |
1.2 |
--- |
||
|
Td(on) |
Turn-On Delay Time | VDD=15V , VGEN=10V , RG=3.3Ω, ID=1A . |
--- |
12 |
--- |
ns |
|
Tr |
Rise Time |
--- |
5.6 |
--- |
||
|
Td(off) |
Turn-Off Delay Time |
--- |
20 |
--- |
||
|
Tf |
Fall Time |
--- |
11 |
--- |
||
|
Ciss |
Input Capacitance | VDS=15V , VGS=0V , f=1MHz |
--- |
680 |
--- |
pF |
|
Coss |
Output Capacitance |
--- |
185 |
--- |
||
|
Crss |
Reverse Transfer Capacitance |
--- |
38 |
--- |
