WSD40200DN56G N-channel 40V 180A DFN5X6-8 WINSOK MOSFET

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WSD40200DN56G N-channel 40V 180A DFN5X6-8 WINSOK MOSFET

short description:

Part Number:WSD40200DN56G

BVDSS:40V

ID:180A

RDSON:1.15mΩ  

Channel:N-channel

Package:DFN5X6-8


Product Detail

Application

Product Tags

WINSOK MOSFET product overview

The voltage of WSD40120DN56G MOSFET is 40V, the current is 120A, the resistance is 1.4mΩ, the channel is N-channel, and the package is DFN5X6-8.

WINSOK MOSFET application areas

E-cigarettes MOSFET, wireless charging MOSFET, drones MOSFET, medical care MOSFET, car chargers MOSFET, controllers MOSFET, digital products MOSFET, small household appliances MOSFET, consumer electronics MOSFET.

WINSOK MOSFET corresponds to other brand material numbers

AOS MOSFET AON6234,AON6232,AON623.STMicroelectronics MOSFET STL14N4F7AG.POTENS Semiconductor MOSFET PDC496X.

MOSFET parameters

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

40

V

VGS

Gate-Source Voltage

±20

V

ID@TC=25

Continuous Drain Current, VGS @ 10V1

120

A

ID@TC=100

Continuous Drain Current, VGS @ 10V1

82

A

IDM

Pulsed Drain Current2

400

A

EAS

Single Pulse Avalanche Energy3

400

mJ

IAS

Avalanche Current

40

A

PD@TC=25

Total Power Dissipation4

125

W

TSTG

Storage Temperature Range

-55 to 150

TJ

Operating Junction Temperature Range

-55 to 150

 

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source Breakdown Voltage VGS=0V , ID=250uA

40

---

---

V

BVDSS/△TJ

BVDSS Temperature Coefficient Reference to 25 , ID=1mA

---

0.043

---

V/

RDS(ON)

Static Drain-Source On-Resistance2 VGS=10V , ID=20A

---

1.4

1.8

mΩ

RDS(ON)

Static Drain-Source On-Resistance2 VGS=4.5V , ID=20A

---

2.0

2.6

VGS(th)

Gate Threshold Voltage VGS=VDS , ID =250uA

1.2

1.6

2.2

V

VGS(th)

VGS(th) Temperature Coefficient

---

-6.94

---

mV/

IDSS

Drain-Source Leakage Current VDS=32V , VGS=0V , TJ=25

---

---

1

uA

VDS=32V , VGS=0V , TJ=55

---

---

5

IGSS

Gate-Source Leakage Current VGS=±20V , VDS=0V

---

---

±100

nA

gfs

Forward Transconductance VDS=5V , ID=20A

---

53

---

S

Rg

Gate Resistance VDS=0V , VGS=0V , f=1MHz

---

1.0

---

Ω

Qg

Total Gate Charge (10V) VDS=15V , VGS=10V , ID=20A

---

45

---

nC

Qgs

Gate-Source Charge

---

12

---

Qgd

Gate-Drain Charge

---

18.5

---

Td(on)

Turn-On Delay Time VDD=15V , VGEN=10V , RG=3.3 Ω, ID=20A ,RL=15Ω.

---

18.5

---

ns

Tr

Rise Time

---

9

---

Td(off)

Turn-Off Delay Time

---

58.5

---

Tf

Fall Time

---

32

---

Ciss

Input Capacitance VDS=20V , VGS=0V , f=1MHz --- 3972 ---

pF

Coss

Output Capacitance

---

1119 ---

Crss

Reverse Transfer Capacitance

---

82

---

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