WSD40190DN56G N-channel 40V 190A DFN5X6-8 WINSOK MOSFET

Part Number：WSD40190DN56G

BVDSS：40V

ID：190A

RDSON：1.25mΩ

Channel：N-channel

Package：DFN5X6-8

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WINSOK MOSFET product overview

The voltage of WSD40120DN56G MOSFET is 40V, the current is 120A, the resistance is 1.4mΩ, the channel is N-channel, and the package is DFN5X6-8.

WINSOK MOSFET application areas

E-cigarettes MOSFET, wireless charging MOSFET, drones MOSFET, medical care MOSFET, car chargers MOSFET, controllers MOSFET, digital products MOSFET, small household appliances MOSFET, consumer electronics MOSFET.

WINSOK MOSFET corresponds to other brand material numbers

AOS MOSFET AON6234,AON6232,AON623.STMicroelectronics MOSFET STL14N4F7AG.POTENS Semiconductor MOSFET PDC496X.

MOSFET parameters

Symbol	Parameter	Rating	Units
VDS	Drain-Source Voltage	40	V
VGS	Gate-Source Voltage	±20	V
I_D@T_C=25℃	Continuous Drain Current, V_GS @ 10V¹	120	A
I_D@T_C=100℃	Continuous Drain Current, V_GS @ 10V¹	82	A
IDM	Pulsed Drain Current²	400	A
EAS	Single Pulse Avalanche Energy³	400	mJ
IAS	Avalanche Current	40	A
P_D@T_C=25℃	Total Power Dissipation⁴	125	W
TSTG	Storage Temperature Range	-55 to 150	℃
T_J	Operating Junction Temperature Range	-55 to 150	℃

Symbol	Parameter	Conditions	Min.	Typ.	Max.	Unit
BV_DSS	Drain-Source Breakdown Voltage	V_GS=0V , I_D=250uA	40	---	---	V
△BVDSS/△TJ	BV_DSS Temperature Coefficient	Reference to 25℃ , I_D=1mA	---	0.043	---	V/℃
RDS(ON)	Static Drain-Source On-Resistance²	VGS=10V , I_D=20A	---	1.4	1.8	mΩ
RDS(ON)	Static Drain-Source On-Resistance²	VGS=4.5V , I_D=20A	---	2.0	2.6	mΩ
VGS(th)	Gate Threshold Voltage	V_GS=V_DS , I_D =250uA	1.2	1.6	2.2	V
△V_GS(th)	V_GS(th)Temperature Coefficient	V_GS=V_DS , I_D =250uA	---	-6.94	---	mV/℃
IDSS	Drain-Source Leakage Current	V_DS=32V , V_GS=0V , T_J=25℃	---	---	1	uA
IDSS	Drain-Source Leakage Current	V_DS=32V , V_GS=0V , T_J=55℃	---	---	5	uA
IGSS	Gate-Source Leakage Current	V_GS=±20V , V_DS=0V	---	---	±100	nA
gfs	Forward Transconductance	V_DS=5V , I_D=20A	---	53	---	S
R_g	Gate Resistance	V_DS=0V , V_GS=0V , f=1MHz	---	1.0	---	Ω
Q_g	Total Gate Charge (10V)	V_DS=15V , V_GS=10V , I_D=20A	---	45	---	nC
Q_gs	Gate-Source Charge		---	12	---
Q_gd	Gate-Drain Charge		---	18.5	---
Td(on)	Turn-On Delay Time	V_DD=15V , V_GEN=10V , R_G=3.3 Ω, I_D=20A ,RL=15Ω.	---	18.5	---	ns
T_r	Rise Time		---	9	---
Td(off)	Turn-Off Delay Time		---	58.5	---
T_f	Fall Time		---	32	---
C_iss	Input Capacitance	V_DS=20V , V_GS=0V , f=1MHz	---	3972	---	pF
Coss	Output Capacitance		---	1119	---
C_rss	Reverse Transfer Capacitance		---	82	---

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