WSD4018DN22 P-channel -40V -18A DFN2X2-6L WINSOK MOSFET
WINSOK MOSFET product overview
The voltage of WSD4018DN22 MOSFET is -40V, the current is -18A, the resistance is 26mΩ, the channel is P-channel, and the package is DFN2X2-6L.
WINSOK MOSFET application areas
Advanced high cell density Trench technology, Super Low Gate Charge, Excellent Cdv/dt effect decline Green Device Available,Face recognition equipment MOSFET, e-cigarette MOSFET, small household appliances MOSFET, car charger MOSFET.
WINSOK MOSFET corresponds to other brand material numbers
AOS MOSFET AON2409,POTENS MOSFET PDB3909L
MOSFET parameters
|
Symbol |
Parameter |
Rating |
Units |
|
VDS |
Drain-Source Voltage |
-40 |
V |
|
VGS |
Gate-Source Voltage |
±20 |
V |
|
ID@Tc=25℃ |
Continuous Drain Current, VGS @ -10V1 |
-18 |
A |
|
ID@Tc=70℃ |
Continuous Drain Current, VGS @ -10V1 |
-14.6 |
A |
|
IDM |
300μS Pulsed Drain Current,VGS=-4.5V2 |
54 |
A |
|
PD@Tc=25℃ |
Total Power Dissipation3 |
19 |
W |
|
TSTG |
Storage Temperature Range |
-55 to 150 |
℃ |
|
TJ |
Operating Junction Temperature Range |
-55 to 150 |
℃ |
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
|
Symbol |
Parameter |
Conditions |
Min. |
Typ. |
Max. |
Unit |
|
BVDSS |
Drain-Source Breakdown Voltage | VGS=0V , ID=-250uA |
-40 |
--- |
--- |
V |
|
△BVDSS/△TJ |
BVDSS Temperature Coefficient | Reference to 25℃ , ID=-1mA |
--- |
-0.01 |
--- |
V/℃ |
|
RDS(ON) |
Static Drain-Source On-Resistance2 | VGS=-10V , ID=-8.0A |
--- |
26 |
34 |
mΩ |
| VGS=-4.5V , ID=-6.0A |
--- |
31 |
42 |
|||
|
VGS(th) |
Gate Threshold Voltage | VGS=VDS , ID =-250uA |
-1.0 |
-1.5 |
-3.0 |
V |
|
△VGS(th) |
VGS(th) Temperature Coefficient |
--- |
3.13 |
--- |
mV/℃ | |
|
IDSS |
Drain-Source Leakage Current | VDS=-40V , VGS=0V , TJ=25℃ |
--- |
--- |
-1 |
uA |
| VDS=-40V , VGS=0V , TJ=55℃ |
--- |
--- |
-5 |
|||
|
IGSS |
Gate-Source Leakage Current | VGS=±20V , VDS=0V |
--- |
--- |
±100 |
nA |
|
Qg |
Total Gate Charge (-4.5V) | VDS=-20V , VGS=-10V , ID=-1.5A |
--- |
27 |
--- |
nC |
|
Qgs |
Gate-Source Charge |
--- |
2.5 |
--- |
||
|
Qgd |
Gate-Drain Charge |
--- |
6.7 |
--- |
||
|
Td(on) |
Turn-On Delay Time | VDD=-20V , VGS=-10V ,RG=3Ω , RL=10Ω |
--- |
9.8 |
--- |
ns |
|
Tr |
Rise Time |
--- |
11 |
--- |
||
|
Td(off) |
Turn-Off Delay Time |
--- |
54 |
--- |
||
|
Tf |
Fall Time |
--- |
7.1 |
--- |
||
|
Ciss |
Input Capacitance | VDS=-20V , VGS=0V , f=1MHz |
--- |
1560 |
--- |
pF |
|
Coss |
Output Capacitance |
--- |
116 |
--- |
||
|
Crss |
Reverse Transfer Capacitance |
--- |
97 |
--- |
