WSD40120DN56 N-channel 40V 120A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET product overview
The voltage of WSD40120DN56 MOSFET is 40V, the current is 120A, the resistance is 1.85mΩ, the channel is N-channel, and the package is DFN5X6-8.
WINSOK MOSFET application areas
E-cigarettes MOSFET, wireless charging MOSFET, drones MOSFET, medical care MOSFET, car chargers MOSFET, controllers MOSFET, digital products MOSFET, small household appliances MOSFET, consumer electronics MOSFET.
WINSOK MOSFET corresponds to other brand material numbers
AOS MOSFET AON6234,AON6232,AON623.Onsemi,FAIRCHILD MOSFET NVMFS5C442NL.VISHAY MOSFET SiRA52ADP,SiJA52ADP.STMicroelectronics MOSFET STL12N4LF6AG.NXP MOSFET PH484S.TOSHIBA MOSFET TPH1R14PB.PANJIT MOSFET PJQ544.NIKO-SEM MOSFET PKCSBB.POTENS Semiconductor MOSFET PDC496X.
MOSFET parameters
|
Symbol |
Parameter |
Rating |
Units |
|
VDS |
Drain-Source Voltage |
40 |
V |
|
VGS |
Gate-Source Voltage |
±20 |
V |
|
ID@TC=25℃ |
Continuous Drain Current, VGS @ 10V1,7 |
120 |
A |
|
ID@TC=100℃ |
Continuous Drain Current, VGS @ 10V1,7 |
100 |
A |
|
IDM |
Pulsed Drain Current2 |
400 |
A |
|
EAS |
Single Pulse Avalanche Energy3 |
240 |
mJ |
|
IAS |
Avalanche Current |
31 |
A |
|
PD@TC=25℃ |
Total Power Dissipation4 |
104 |
W |
|
TSTG |
Storage Temperature Range |
-55 to 150 |
℃ |
|
TJ |
Operating Junction Temperature Range |
-55 to 150 |
℃ |
|
Symbol |
Parameter |
Conditions |
Min. |
Typ. |
Max. |
Unit |
|
BVDSS |
Drain-Source Breakdown Voltage | VGS=0V , ID=250uA |
40 |
--- |
--- |
V |
|
△BVDSS/△TJ |
BVDSS Temperature Coefficient | Reference to 25℃ , ID=1mA |
--- |
0.043 |
--- |
V/℃ |
|
RDS(ON) |
Static Drain-Source On-Resistance2 | VGS=10V , ID=30A |
--- |
1.85 |
2.4 |
mΩ |
|
RDS(ON) |
Static Drain-Source On-Resistance2 | VGS=4.5V , ID=20A |
--- |
2.5 |
3.3 |
mΩ |
|
VGS(th) |
Gate Threshold Voltage | VGS=VDS , ID =250uA |
1.5 |
1.8 |
2.5 |
V |
|
△VGS(th) |
VGS(th) Temperature Coefficient |
--- |
-6.94 |
--- |
mV/℃ | |
|
IDSS |
Drain-Source Leakage Current | VDS=32V , VGS=0V , TJ=25℃ |
--- |
--- |
2 |
uA |
| VDS=32V , VGS=0V , TJ=55℃ |
--- |
--- |
10 |
|||
|
IGSS |
Gate-Source Leakage Current | VGS=±20V , VDS=0V |
--- |
--- |
±100 |
nA |
|
gfs |
Forward Transconductance | VDS=5V , ID=20A |
--- |
55 |
--- |
S |
|
Rg |
Gate Resistance | VDS=0V , VGS=0V , f=1MHz |
--- |
1.1 |
2 |
Ω |
|
Qg |
Total Gate Charge (10V) | VDS=20V , VGS=10V , ID=10A |
--- |
76 |
91 |
nC |
|
Qgs |
Gate-Source Charge |
--- |
12 |
14.4 |
||
|
Qgd |
Gate-Drain Charge |
--- |
15.5 |
18.6 |
||
|
Td(on) |
Turn-On Delay Time | VDD=30V , VGEN=10V , RG=1Ω, ID=1A ,RL=15Ω. |
--- |
20 |
24 |
ns |
|
Tr |
Rise Time |
--- |
10 |
12 |
||
|
Td(off) |
Turn-Off Delay Time |
--- |
58 |
69 |
||
|
Tf |
Fall Time |
--- |
34 |
40 |
||
|
Ciss |
Input Capacitance | VDS=20V , VGS=0V , f=1MHz |
--- |
4350 |
--- |
pF |
|
Coss |
Output Capacitance |
--- |
690 |
--- |
||
|
Crss |
Reverse Transfer Capacitance |
--- |
370 |
--- |
