WSD40110DN56G N-channel 40V 110A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET product overview
The voltage of WSD4080DN56 MOSFET is 40V, the current is 85A, the resistance is 4.5mΩ, the channel is N-channel, and the package is DFN5X6-8.
WINSOK MOSFET application areas
Small appliances MOSFET, handheld appliances MOSFET, motors MOSFET.
WINSOK MOSFET corresponds to other brand material numbers
AOS MOSFET AON623.STMicroelectronics MOSFET STL52DN4LF7AG,STL64DN4F7AG,STL64N4F7AG.PANJIT MOSFET PJQ5442.POTENS Semiconductor MOSFET PDC496X.
MOSFET parameters
|
Symbol |
Parameter |
Rating |
Units |
|
VDS |
Drain-Source Voltage |
40 |
V |
|
VGS |
Gate-Source Voltage |
±20 |
V |
|
ID@TC=25℃ |
Continuous Drain Current, VGS @ 10V1 |
85 |
A |
|
ID@TC=100℃ |
Continuous Drain Current, VGS @ 10V1 |
58 |
A |
|
IDM |
Pulsed Drain Current2 |
100 |
A |
|
EAS |
Single Pulse Avalanche Energy3 |
110.5 |
mJ |
|
IAS |
Avalanche Current |
47 |
A |
|
PD@TC=25℃ |
Total Power Dissipation4 |
52.1 |
W |
|
TSTG |
Storage Temperature Range |
-55 to 150 |
℃ |
|
TJ |
Operating Junction Temperature Range |
-55 to 150 |
℃ |
|
RθJA |
Thermal Resistance Junction-Ambient 1 |
62 |
℃/W |
|
RθJC |
Thermal Resistance Junction-Case1 |
2.4 |
℃/W |
|
Symbol |
Parameter |
Conditions |
Min. |
Typ. |
Max. |
Unit |
|
BVDSS |
Drain-Source Breakdown Voltage | VGS=0V , ID=250uA |
40 |
--- |
--- |
V |
|
RDS(ON) |
Static Drain-Source On-Resistance2 | VGS=10V , ID=10A |
--- |
4.5 |
6.5 |
mΩ |
| VGS=4.5V , ID=5A |
--- |
6.4 |
8.5 |
|||
|
VGS(th) |
Gate Threshold Voltage | VGS=VDS , ID =250uA |
1.0 |
--- |
2.5 |
V |
|
IDSS |
Drain-Source Leakage Current | VDS=32V , VGS=0V , TJ=25℃ |
--- |
--- |
1 |
uA |
| VDS=32V , VGS=0V , TJ=55℃ |
--- |
--- |
5 |
|||
|
IGSS |
Gate-Source Leakage Current | VGS=±20V , VDS=0V |
--- |
--- |
±100 |
nA |
|
gfs |
Forward Transconductance | VDS=10V , ID=5A |
--- |
27 |
--- |
S |
|
Qg |
Total Gate Charge (4.5V) | VDS=20V , VGS=4.5V , ID=10A |
--- |
20 |
--- |
nC |
|
Qgs |
Gate-Source Charge |
--- |
5.8 |
--- |
||
|
Qgd |
Gate-Drain Charge |
--- |
9.5 |
--- |
||
|
Td(on) |
Turn-On Delay Time | VDD=15V , VGS=10V RG=3.3Ω
ID=1A |
--- |
15.2 |
--- |
ns |
|
Tr |
Rise Time |
--- |
8.8 |
--- |
||
|
Td(off) |
Turn-Off Delay Time |
--- |
74 |
--- |
||
|
Tf |
Fall Time |
--- |
7 |
--- |
||
|
Ciss |
Input Capacitance | VDS=15V , VGS=0V , f=1MHz |
--- |
2354 |
--- |
pF |
|
Coss |
Output Capacitance |
--- |
215 |
--- |
||
|
Crss |
Reverse Transfer Capacitance |
--- |
175 |
--- |
||
|
IS |
Continuous Source Current1,5 | VG=VD=0V , Force Current |
--- |
--- |
70 |
A |
|
VSD |
Diode Forward Voltage2 | VGS=0V , IS=1A , TJ=25℃ |
--- |
--- |
1 |
V |
