WSD30350DN56G N-channel 30V 350A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET product overview
The voltage of WSD30350DN56G MOSFET is 30V, the current is 350A, the resistance is 1.8mΩ, the channel is N-channel, and the package is DFN5X6-8.
WINSOK MOSFET application areas
E-cigarettes MOSFET, wireless charging MOSFET, drones MOSFET, medical care MOSFET, car chargers MOSFET, controllers MOSFET, digital products MOSFET, small household appliances MOSFET, consumer electronics MOSFET.
MOSFET parameters
|
Symbol |
Parameter |
Rating |
Units |
|
VDS |
Drain-Source Voltage |
30 |
V |
|
VGS |
Gate-Source Voltage |
±20 |
V |
|
ID@TC=25℃ |
Continuous Drain Current（Silicon Limited）1,7 |
350 |
A |
|
ID@TC=70℃ |
Continuous Drain Current(Silicon Limited）1,7 |
247 |
A |
|
IDM |
Pulsed Drain Current2 |
600 |
A |
|
EAS |
Single Pulse Avalanche Energy3 |
1800 |
mJ |
|
IAS |
Avalanche Current |
100 |
A |
|
PD@TC=25℃ |
Total Power Dissipation4 |
104 |
W |
|
TSTG |
Storage Temperature Range |
-55 to 150 |
℃ |
|
TJ |
Operating Junction Temperature Range |
-55 to 150 |
℃ |
|
Symbol |
Parameter |
Conditions |
Min. |
Typ. |
Max. |
Unit |
|
BVDSS |
Drain-Source Breakdown Voltage | VGS=0V , ID=250uA |
30 |
--- |
--- |
V |
|
△BVDSS/△TJ |
BVDSS Temperature Coefficient | Reference to 25℃ , ID=1mA |
--- |
0.022 |
--- |
V/℃ |
|
RDS(ON) |
Static Drain-Source On-Resistance2 | VGS=10V , ID=20A |
--- |
0.48 |
0.62 |
mΩ |
| VGS=4.5V , ID=20A |
--- |
0.72 |
0.95 |
|||
|
VGS(th) |
Gate Threshold Voltage | VGS=VDS , ID =250uA |
1.2 |
1.5 |
2.5 |
V |
|
△VGS(th) |
VGS(th) Temperature Coefficient |
--- |
-6.1 |
--- |
mV/℃ | |
|
IDSS |
Drain-Source Leakage Current | VDS=24V , VGS=0V , TJ=25℃ |
--- |
--- |
1 |
uA |
| VDS=24V , VGS=0V , TJ=55℃ |
--- |
--- |
5 |
|||
|
IGSS |
Gate-Source Leakage Current | VGS=±20V , VDS=0V |
--- |
--- |
±100 |
nA |
|
gfs |
Forward Transconductance | VDS=5V , ID=10A |
--- |
40 |
--- |
S |
|
Rg |
Gate Resistance | VDS=0V , VGS=0V , f=1MHz |
--- |
3.8 |
1.5 |
Ω |
|
Qg |
Total Gate Charge (4.5V) | VDS=15V , VGS=4.5V , ID=20A |
--- |
89 |
--- |
nC |
|
Qgs |
Gate-Source Charge |
--- |
37 |
--- |
||
|
Qgd |
Gate-Drain Charge |
--- |
20 |
--- |
||
|
Td(on) |
Turn-On Delay Time | VDD=15V , VGEN=10V ,
RG=1Ω, ID=10A |
--- |
25 |
--- |
ns |
|
Tr |
Rise Time |
--- |
34 |
--- |
||
|
Td(off) |
Turn-Off Delay Time |
--- |
61 |
--- |
||
|
Tf |
Fall Time |
--- |
18 |
--- |
||
|
Ciss |
Input Capacitance | VDS=15V , VGS=0V , f=1MHz |
--- |
7845 |
--- |
pF |
|
Coss |
Output Capacitance |
--- |
4525 |
--- |
||
|
Crss |
Reverse Transfer Capacitance |
--- |
139 |
--- |
