WSD30300DN56G N-channel 30V 300A DFN5X6-8 WINSOK MOSFET

Part Number：WSD30300DN56G

BVDSS：30V

ID：300A

RDSON：0.7mΩ

Channel：N-channel

Package：DFN5X6-8

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WINSOK MOSFET product overview

The voltage of WSD20100DN56 MOSFET is 20V, the current is 90A, the resistance is 1.6mΩ, the channel is N-channel, and the package is DFN5X6-8.

WINSOK MOSFET application areas

Electronic cigarettes MOSFET, drones MOSFET, electrical tools MOSFET, fascia guns MOSFET, PD MOSFET, small household appliances MOSFET.

WINSOK MOSFET corresponds to other brand material numbers

AOS MOSFET AON6572.

POTENS Semiconductor MOSFET PDC394X.

MOSFET parameters

Symbol	Parameter	Rating	Units
VDS	Drain-Source Voltage	20	V
VGS	Gate-Source Voltage	±12	V
ID@T_C=25℃	Continuous Drain Current₁	90	A
ID@T_C=100℃	Continuous Drain Current₁	48	A
IDM	Pulsed Drain Current₂	270	A
EAS	Single Pulse Avalanche Energy₃	80	mJ
IAS	Avalanche Current	40	A
PD@T_C=25℃	Total Power Dissipation₄	83	W
TSTG	Storage Temperature Range	-55 to 150	℃
TJ	Operating Junction Temperature Range	-55 to 150	℃
RθJA	Thermal Resistance Junction-ambient ₁(t≦10S)	20	℃/W
RθJA	Thermal Resistance Junction-ambient ₁(Steady State)	55	℃/W
RθJC	Thermal Resistance Junction-case ₁	1.5	℃/W

Symbol	Parameter	Conditions	Min	Typ	Max	Unit
BVDSS	Drain-Source Breakdown Voltage	VGS=0V , ID=250uA	20	23	---	V
VGS(th)	Gate Threshold Voltage	VGS=VDS , ID =250uA	0.5	0.68	1.0	V
RDS(ON)	Static Drain-Source On-Resistance₂	VGS=10V , ID=20A	---	1.6	2.0	mΩ
RDS(ON)	Static Drain-Source On-Resistance₂	VGS=4.5V , ID=20A		1.9	2.5	mΩ
RDS(ON)	Static Drain-Source On-Resistance₂	VGS=2.5V , ID=20A	---	2.8	3.8	mΩ
IDSS	Drain-Source Leakage Current	VDS=16V , VGS=0V , TJ=25℃	---	---	1	uA
IDSS	Drain-Source Leakage Current	VDS=16V , VGS=0V , TJ=125℃	---	---	5	uA
IGSS	Gate-Source Leakage Current	VGS=±10V , VDS=0V	---	---	±10	uA
Rg	Gate Resistance	VDS=0V , VGS=0V , f=1MHz	---	1.2	---	Ω
Qg	Total Gate Charge (10V)	VDS=15V , VGS=10V , ID=20A	---	77	---	nC
Qgs	Gate-Source Charge		---	8.7	---
Qgd	Gate-Drain Charge		---	14	---
Td(on)	Turn-On Delay Time	VDD=15V , VGS=10V , RG=3 , ID=20A	---	10.2	---	ns
Tr	Rise Time		---	11.7	---
Td(off)	Turn-Off Delay Time		---	56.4	---
Tf	Fall Time		---	16.2	---
Ciss	Input Capacitance	VDS=10V , VGS=0V , f=1MHz	---	4307	---	pF
Coss	Output Capacitance		---	501	---
Crss	Reverse Transfer Capacitance		---	321	---
IS	Continuous Source Current_1,5	V_G=V_D=0V , Force Current	---	---	50	A
VSD	Diode Forward Voltage₂	VGS=0V , IS=1A , TJ=25℃	---	---	1.2	V
trr	Reverse Recovery Time	IF=20A , di/dt=100A/µs , T_J=25℃	---	22	---	nS
Qrr	Reverse Recovery Charge	IF=20A , di/dt=100A/µs , T_J=25℃	---	72	---	nC

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