WSD3023DN56 N-Ch and P-Channel 30V/-30V 14A/-12A DFN5*6-8 WINSOK MOSFET

short description:

Model Number: WSD3023DN56

BVDSS: 30V/-30V

RDSON: 14mΩ/23mΩ

ID: 14A/-12A

Channel: N-Ch and P-Channel

Package: DFN5*6-8

Product Summery: The voltage of WSD3023DN56 MOSFET is 30V/-30V, the current is14A/-12A, the resistance is 14mΩ/23mΩ, the channel is N-Ch and P-Channel, and the package is DFN5*6-8.

Applications: Drones, motors, automotive electronics, major appliances.

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General Description

The WSD3023DN56 is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density ,which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The WSD3023DN56 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved.

Features

Advanced high cell density Trench technology ,Super Low Gate Charge ,Excellent CdV/dt effect decline ,100% EAS Guaranteed ,Green Device Available.

Applications

High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA,Networking DC-DC Power System ,CCFL Back-light Inverter,Drones, motors, automotive electronics, major appliances.

corresponding material number

PANJIT PJQ5606

Important parameters

Symbol	Parameter	Rating		Units
Symbol	Parameter	N-Ch	P-Ch	Units
VDS	Drain-Source Voltage	30	-30	V
VGS	Gate-Source Voltage	±20	±20	V
ID	Continuous Drain Current, VGS(NP)=10V,Ta=25℃	14*	-12	A
ID	Continuous Drain Current, VGS(NP)=10V,Ta=70℃	7.6	-9.7	A
IDP a	Pulse Drain Current Tested, VGS(NP)=10V	48	-48	A
EAS c	Avalanche Energy, Single pulse , L=0.5mH	20	20	mJ
IAS c	Avalanche Current, Single pulse , L=0.5mH	9	-9	A
PD	Total Power Dissipation, Ta=25℃	5.25	5.25	W
TSTG	Storage Temperature Range	-55 to 175	-55 to 175	℃
TJ	Operating Junction Temperature Range	175	175	℃
RqJA b	Thermal Resistance-Junction to Ambient,Steady State	60	60	℃/W
RqJC	Thermal Resistance-Junction to Case,Steady State	6.25	6.25	℃/W

Symbol	Parameter	Conditions	Min.	Typ.	Max.	Unit
BVDSS	Drain-Source Breakdown Voltage	VGS=0V , ID=250uA	30	---	---	V
RDS(ON)d	Static Drain-Source On-Resistance	VGS=10V , ID=8A	---	14	18.5	mΩ
RDS(ON)d	Static Drain-Source On-Resistance	VGS=4.5V , ID=5A	---	17	25	mΩ
VGS(th)	Gate Threshold Voltage	VGS=VDS , ID =250uA	1.3	1.8	2.3	V
IDSS	Drain-Source Leakage Current	VDS=20V , VGS=0V , TJ=25℃	---	---	1	uA
IDSS	Drain-Source Leakage Current	VDS=20V , VGS=0V , TJ=85℃	---	---	30	uA
IGSS	Gate-Source Leakage Current	VGS=±20V , VDS=0V	---	---	±100	nA
Rg	Gate Resistance	VDS=0V , VGS=0V , f=1MHz	---	1.7	3.4	Ω
Qge	Total Gate Charge	VDS=15V, VGS=4.5V, IDS=8A	---	5.2	---	nC
Qgse	Gate-Source Charge		---	1.0	---
Qgde	Gate-Drain Charge		---	2.8	---
Td(on)e	Turn-On Delay Time	VDD=15V,RL=15R, IDS=1A,VGEN=10V, RG=6R.	---	6	---	ns
Tre	Rise Time		---	8.6	---
Td(off)e	Turn-Off Delay Time		---	16	---
Tfe	Fall Time		---	3.6	---
Cisse	Input Capacitance	VDS=15V , VGS=0V , f=1MHz	---	545	---	pF
Cosse	Output Capacitance		---	95	---
Crsse	Reverse Transfer Capacitance		---	55	---