WSD30160DN56 N-channel 30V 120A DFN5X6-8 WINSOK MOSFET

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WSD30160DN56 N-channel 30V 120A DFN5X6-8 WINSOK MOSFET

short description:

Part Number:WSD30160DN56

BVDSS:30V

ID:120A

RDSON:1.9mΩ  

Channel:N-channel

Package:DFN5X6-8


Product Detail

Application

Product Tags

WINSOK MOSFET product overview

The voltage of WSD30160DN56 MOSFET is 30V, the current is 120A, the resistance is 1.9mΩ, the channel is N-channel, and the package is DFN5X6-8.

WINSOK MOSFET application areas

E-cigarettes MOSFET, wireless charging MOSFET, drones MOSFET, medical care MOSFET, car chargers MOSFET, controllers MOSFET, digital products MOSFET, small household appliances MOSFET, consumer electronics MOSFET.

WINSOK MOSFET corresponds to other brand material numbers

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Onsemi,FAIRCHILD MOSFET NTMFS4834N,NTMFS4C5N.

TOSHIBA MOSFET TPH2R93PL.

PANJIT MOSFET PJQ5426.

NIKO-SEM MOSFET PKE1BB.

POTENS Semiconductor MOSFET PDC392X.

MOSFET parameters

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

30

V

VGS

Gate-Source Voltage

±20

V

ID@TC=25

Continuous Drain Current, VGS @ 10V1,7

120

A

ID@TC=100

Continuous Drain Current, VGS @ 10V1,7

68

A

IDM

Pulsed Drain Current2

300

A

EAS

Single Pulse Avalanche Energy3

128

mJ

IAS

Avalanche Current

50

A

PD@TC=25

Total Power Dissipation4

62.5

W

TSTG

Storage Temperature Range

-55 to 150

TJ

Operating Junction Temperature Range

-55 to 150

 

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source Breakdown Voltage VGS=0V , ID=250uA

30

---

---

V

BVDSS/△TJ

BVDSS Temperature Coefficient Reference to 25 , ID=1mA

---

0.02

---

V/

RDS(ON)

Static Drain-Source On-Resistance2 VGS=10V , ID=20A

---

1.9

2.5 mΩ
VGS=4.5V , ID=15A

---

2.9

3.5

VGS(th)

Gate Threshold Voltage VGS=VDS , ID =250uA

1.2

1.7

2.5

V

VGS(th)

VGS(th) Temperature Coefficient

---

-6.1

---

mV/

IDSS

Drain-Source Leakage Current VDS=24V , VGS=0V , TJ=25

---

---

1

uA

VDS=24V , VGS=0V , TJ=55

---

---

5

IGSS

Gate-Source Leakage Current VGS=±20V , VDS=0V

---

---

±100

nA

gfs

Forward Transconductance VDS=5V , ID=10A

---

32

---

S

Rg

Gate Resistance VDS=0V , VGS=0V , f=1MHz

---

0.8

1.5

Ω

Qg

Total Gate Charge (4.5V) VDS=15V , VGS=4.5V , ID=20A

---

38

---

nC

Qgs

Gate-Source Charge

---

10

---

Qgd

Gate-Drain Charge

---

13

---

Td(on)

Turn-On Delay Time VDD=15V , VGEN=10V , RG=6Ω, ID=1A, RL=15Ω.

---

25

---

ns

Tr

Rise Time

---

23

---

Td(off)

Turn-Off Delay Time

---

95

---

Tf

Fall Time

---

40

---

Ciss

Input Capacitance VDS=15V , VGS=0V , f=1MHz

---

4900

---

pF

Coss

Output Capacitance

---

1180

---

Crss

Reverse Transfer Capacitance

---

530

---


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