WSD30160DN56 N-channel 30V 120A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET product overview
The voltage of WSD30160DN56 MOSFET is 30V, the current is 120A, the resistance is 1.9mΩ, the channel is N-channel, and the package is DFN5X6-8.
WINSOK MOSFET application areas
E-cigarettes MOSFET, wireless charging MOSFET, drones MOSFET, medical care MOSFET, car chargers MOSFET, controllers MOSFET, digital products MOSFET, small household appliances MOSFET, consumer electronics MOSFET.
WINSOK MOSFET corresponds to other brand material numbers
AOS MOSFET AON6382,AON6384,AON644A,AON6548.
Onsemi,FAIRCHILD MOSFET NTMFS4834N,NTMFS4C5N.
TOSHIBA MOSFET TPH2R93PL.
PANJIT MOSFET PJQ5426.
NIKO-SEM MOSFET PKE1BB.
POTENS Semiconductor MOSFET PDC392X.
MOSFET parameters
|
Symbol |
Parameter |
Rating |
Units |
|
VDS |
Drain-Source Voltage |
30 |
V |
|
VGS |
Gate-Source Voltage |
±20 |
V |
|
ID@TC=25℃ |
Continuous Drain Current, VGS @ 10V1,7 |
120 |
A |
|
ID@TC=100℃ |
Continuous Drain Current, VGS @ 10V1,7 |
68 |
A |
|
IDM |
Pulsed Drain Current2 |
300 |
A |
|
EAS |
Single Pulse Avalanche Energy3 |
128 |
mJ |
|
IAS |
Avalanche Current |
50 |
A |
|
PD@TC=25℃ |
Total Power Dissipation4 |
62.5 |
W |
|
TSTG |
Storage Temperature Range |
-55 to 150 |
℃ |
|
TJ |
Operating Junction Temperature Range |
-55 to 150 |
℃ |
|
Symbol |
Parameter |
Conditions |
Min. |
Typ. |
Max. |
Unit |
|
BVDSS |
Drain-Source Breakdown Voltage | VGS=0V , ID=250uA |
30 |
--- |
--- |
V |
|
△BVDSS/△TJ |
BVDSS Temperature Coefficient | Reference to 25℃ , ID=1mA |
--- |
0.02 |
--- |
V/℃ |
|
RDS(ON) |
Static Drain-Source On-Resistance2 | VGS=10V , ID=20A |
--- |
1.9 |
2.5 | mΩ |
| VGS=4.5V , ID=15A |
--- |
2.9 |
3.5 | |||
|
VGS(th) |
Gate Threshold Voltage | VGS=VDS , ID =250uA |
1.2 |
1.7 |
2.5 |
V |
|
△VGS(th) |
VGS(th) Temperature Coefficient |
--- |
-6.1 |
--- |
mV/℃ | |
|
IDSS |
Drain-Source Leakage Current | VDS=24V , VGS=0V , TJ=25℃ |
--- |
--- |
1 |
uA |
| VDS=24V , VGS=0V , TJ=55℃ |
--- |
--- |
5 |
|||
|
IGSS |
Gate-Source Leakage Current | VGS=±20V , VDS=0V |
--- |
--- |
±100 |
nA |
|
gfs |
Forward Transconductance | VDS=5V , ID=10A |
--- |
32 |
--- |
S |
|
Rg |
Gate Resistance | VDS=0V , VGS=0V , f=1MHz |
--- |
0.8 |
1.5 |
Ω |
|
Qg |
Total Gate Charge (4.5V) | VDS=15V , VGS=4.5V , ID=20A |
--- |
38 |
--- |
nC |
|
Qgs |
Gate-Source Charge |
--- |
10 |
--- |
||
|
Qgd |
Gate-Drain Charge |
--- |
13 |
--- |
||
|
Td(on) |
Turn-On Delay Time | VDD=15V , VGEN=10V , RG=6Ω, ID=1A, RL=15Ω. |
--- |
25 |
--- |
ns |
|
Tr |
Rise Time |
--- |
23 |
--- |
||
|
Td(off) |
Turn-Off Delay Time |
--- |
95 |
--- |
||
|
Tf |
Fall Time |
--- |
40 |
--- |
||
|
Ciss |
Input Capacitance | VDS=15V , VGS=0V , f=1MHz |
--- |
4900 |
--- |
pF |
|
Coss |
Output Capacitance |
--- |
1180 |
--- |
||
|
Crss |
Reverse Transfer Capacitance |
--- |
530 |
--- |
