WSD30160DN56 N-channel 30V 120A DFN5X6-8 WINSOK MOSFET

Part Number：WSD30160DN56

BVDSS：30V

ID：120A

RDSON：1.9mΩ

Channel：N-channel

Package：DFN5X6-8

Request Quote Download Datasheet

✓ In Stock

🔒 Quality Guaranteed

🚚 Fast Shipping

💯 100% Authentic

Product Detail

Application

Product Tags

WINSOK MOSFET product overview

The voltage of WSD30160DN56 MOSFET is 30V, the current is 120A, the resistance is 1.9mΩ, the channel is N-channel, and the package is DFN5X6-8.

WINSOK MOSFET application areas

E-cigarettes MOSFET, wireless charging MOSFET, drones MOSFET, medical care MOSFET, car chargers MOSFET, controllers MOSFET, digital products MOSFET, small household appliances MOSFET, consumer electronics MOSFET.

WINSOK MOSFET corresponds to other brand material numbers

AOS MOSFET AON6382,AON6384,AON644A,AON6548.

Onsemi,FAIRCHILD MOSFET NTMFS4834N,NTMFS4C5N.

TOSHIBA MOSFET TPH2R93PL.

PANJIT MOSFET PJQ5426.

NIKO-SEM MOSFET PKE1BB.

POTENS Semiconductor MOSFET PDC392X.

MOSFET parameters

Symbol	Parameter	Rating	Units
VDS	Drain-Source Voltage	30	V
VGS	Gate-Source Voltage	±20	V
I_D@T_C=25℃	Continuous Drain Current, V_GS @ 10V^1,7	120	A
I_D@T_C=100℃	Continuous Drain Current, V_GS @ 10V^1,7	68	A
IDM	Pulsed Drain Current²	300	A
EAS	Single Pulse Avalanche Energy³	128	mJ
IAS	Avalanche Current	50	A
P_D@T_C=25℃	Total Power Dissipation⁴	62.5	W
TSTG	Storage Temperature Range	-55 to 150	℃
T_J	Operating Junction Temperature Range	-55 to 150	℃

Symbol	Parameter	Conditions	Min.	Typ.	Max.	Unit
BV_DSS	Drain-Source Breakdown Voltage	V_GS=0V , I_D=250uA	30	---	---	V
△BVDSS/△TJ	BV_DSS Temperature Coefficient	Reference to 25℃ , I_D=1mA	---	0.02	---	V/℃
RDS(ON)	Static Drain-Source On-Resistance²	V_GS=10V , I_D=20A	---	1.9	2.5	mΩ
RDS(ON)	Static Drain-Source On-Resistance²	V_GS=4.5V , I_D=15A	---	2.9	3.5	mΩ
VGS(th)	Gate Threshold Voltage	V_GS=V_DS , I_D =250uA	1.2	1.7	2.5	V
△V_GS(th)	V_GS(th)Temperature Coefficient	V_GS=V_DS , I_D =250uA	---	-6.1	---	mV/℃
IDSS	Drain-Source Leakage Current	V_DS=24V , V_GS=0V , T_J=25℃	---	---	1	uA
IDSS	Drain-Source Leakage Current	V_DS=24V , V_GS=0V , T_J=55℃	---	---	5	uA
IGSS	Gate-Source Leakage Current	V_GS=±20V , V_DS=0V	---	---	±100	nA
gfs	Forward Transconductance	V_DS=5V , I_D=10A	---	32	---	S
R_g	Gate Resistance	V_DS=0V , V_GS=0V , f=1MHz	---	0.8	1.5	Ω
Q_g	Total Gate Charge (4.5V)	V_DS=15V , V_GS=4.5V , I_D=20A	---	38	---	nC
Q_gs	Gate-Source Charge		---	10	---
Q_gd	Gate-Drain Charge		---	13	---
Td(on)	Turn-On Delay Time	V_DD=15V , V_GEN=10V , R_G=6Ω, I_D=1A, RL=15Ω.	---	25	---	ns
T_r	Rise Time		---	23	---
Td(off)	Turn-Off Delay Time		---	95	---
T_f	Fall Time		---	40	---
C_iss	Input Capacitance	V_DS=15V , V_GS=0V , f=1MHz	---	4900	---	pF
Coss	Output Capacitance		---	1180	---
C_rss	Reverse Transfer Capacitance		---	530	---

Why Choose Us?

💰

Better Than Factory Prices

Competitive pricing that beats direct factory offers through our strategic partnerships

⚡

Fast Shipping

Large inventory ready for immediate dispatch with quick delivery times

⭐

Premium Service

Superior customer support and technical assistance throughout your journey

Get a Quick Quote →

FAQ

How to Place an Order?

1. Submit inquiry through our website
2. Receive quotation within 24 hours
3. Confirm order details and make payment
4. Order processing and shipping

MOQ & Payment Terms

• Standard MOQ: 1000 pieces
• Sample order: 10-50 pieces
• Payment Terms: 30% deposit, 70% before shipment

Payment Methods

• T/T (Bank Transfer)
• Letter of Credit (L/C)
• Western Union
• PayPal (for sample orders)

Shipping & Delivery

• Warehouses: Hong Kong & Shenzhen
• Delivery time: 3-5 days after payment
• Express services: DHL, FedEx, UPS
• Air freight available for bulk orders