WSD30140DN56 N-channel 30V 85A DFN5*6-8 WINSOK MOSFET

Model Number: WSD30140DN56

BVDSS: 30V

RDSON: 1.7mΩ

ID: 85A

Channel: N-channel

Package: DFN5*6-8

Product Summery: The voltage of WSD30140DN56 MOSFET is 30V, the current is 85A, the resistance is 1.7mΩ, the channel is N-channel, and the package is DFN5*6-8.

Applications: Electronic cigarettes, wireless chargers, drones, medical care, car chargers, controllers, digital products, small appliances, consumer electronics, etc.

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General Description

The WSD30140DN56 is the highest performance trench N-channel MOSFET with very high cell density providing excellent RDSON and gate charge for most synchronous buck converter applications. WSD30140DN56 complies with RoHS and green product requirements, 100% EAS guarantee, full function reliability approved.

Features

Advanced high cell density Trench technology, ultra-low gate charge, excellent CdV/dt effect attenuation, 100% EAS guarantee, green devices available

Applications

High-frequency point-of-load synchronization, buck converters, networked DC-DC power systems, electric tool applications, electronic cigarettes, wireless charging, drones, medical care, car charging, controllers, digital products, small appliances, consumer electronics

corresponding material number

AO AON6312, AON6358, AON6360, AON6734, AON6792, AONS36314. ON NTMFS4847N. VISHAY SiRA62DP. ST STL86N3LLH6AG. INFINEON BSC050N03MSG. TI CSD17327Q5A, CSD17327Q5A, CSD17307Q5A. NXP PH2520U. TOSHIBA TPH4R803PL TPH3R203NL. ROHM RS1E281BN, RS1E280BN, RS1E280GN, RS1E301GN, RS1E321GN, RS1E350BN, RS1E350GN. PANJIT PJQ5410. AP AP3D5R0MT. NIKO PK610SA, PK510BA. POTENS PDC3803R

Important parameters

Symbol	Parameter	Rating	Units
VDS	Drain-Source Voltage	30	V
VGS	Gate-Source Voltage	±20	V
ID@TC=25℃	Continuous Drain Current, VGS @ 10V1,7	85	A
ID@TC=70℃	Continuous Drain Current, VGS @ 10V1,7	65	A
IDM	Pulsed Drain Current2	300	A
PD@TC=25℃	Total Power Dissipation4	50	W
TSTG	Storage Temperature Range	-55 to 150	℃
TJ	Operating Junction Temperature Range	-55 to 150	℃

Symbol	Parameter	Conditions	Min.	Typ.	Max.	Unit
BVDSS	Drain-Source Breakdown Voltage	VGS=0V , ID=250uA	30	---	---	V
△BVDSS/△TJ	BVDSS Temperature Coefficient	Reference to 25℃, ID=1mA	---	0.02	---	V/℃
RDS(ON)	Static Drain-Source On-Resistance2	VGS=10V , ID=20A	---	1.7	2.4	mΩ
RDS(ON)	Static Drain-Source On-Resistance2	VGS=4.5V , ID=15A		2.5	3.3	mΩ
VGS(th)	Gate Threshold Voltage	VGS=VDS , ID =250uA	1.2	1.7	2.5	V
	Drain-Source Leakage Current	VDS=24V , VGS=0V , TJ=25℃	---	---	1	uA
IDSS	Drain-Source Leakage Current	VDS=24V , VGS=0V , TJ=55℃	---	---	5	uA
IGSS	Gate-Source Leakage Current	VGS=±20V , VDS=0V	---	---	±100	nA
gfs	Forward Transconductance	VDS=5V , ID=20A	---	90	---	S
Qg	Total Gate Charge (4.5V)	VDS=15V , VGS=4.5V , ID=20A	---	26	---	nC
Qgs	Gate-Source Charge		---	9.5	---
Qgd	Gate-Drain Charge		---	11.4	---
Td(on)	Turn-On Delay Time	VDD=15V , VGEN=10V , RG=3Ω, RL=0.75Ω.	---	11	---	ns
Tr	Rise Time		---	6	---
Td(off)	Turn-Off Delay Time		---	38.5	---
Tf	Fall Time		---	10	---
Ciss	Input Capacitance	VDS=15V , VGS=0V , f=1MHz	---	3000	---	pF
Coss	Output Capacitance		---	1280	---
Crss	Reverse Transfer Capacitance		---	160	---

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