WSD25280DN56G N-channel 25V 280A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET product overview
The voltage of WSD25280DN56G MOSFET is 25V, the current is 280A, the resistance is 0.7mΩ, the channel is N-channel, and the package is DFN5X6-8.
WINSOK MOSFET application areas
High Frequency Point-of-Load Synchronous、Buck Converter、Networking DC-DC Power System、Power Tool Application,E-cigarettes MOSFET, wireless charging MOSFET, drones MOSFET, medical care MOSFET, car chargers MOSFET, controllers MOSFET, digital products MOSFET, small household appliances MOSFET, consumer electronics MOSFET.
WINSOK MOSFET corresponds to other brand material numbers
Nxperian MOSFET PSMN1R-4ULD.
POTENS Semiconductor MOSFET PDC262X.
MOSFET parameters
|
Symbol |
Parameter |
Rating |
Units |
|
VDS |
Drain-Source Voltage |
25 |
V |
|
VGS |
Gate-Source Voltage |
±20 |
V |
|
ID@TC=25℃ |
Continuous Drain Current（Silicon Limited）1,7 |
280 |
A |
|
ID@TC=70℃ |
Continuous Drain Current(Silicon Limited）1,7 |
190 |
A |
|
IDM |
Pulsed Drain Current2 |
600 |
A |
|
EAS |
Single Pulse Avalanche Energy3 |
1200 |
mJ |
|
IAS |
Avalanche Current |
100 |
A |
|
PD@TC=25℃ |
Total Power Dissipation4 |
83 |
W |
|
TSTG |
Storage Temperature Range |
-55 to 150 |
℃ |
|
TJ |
Operating Junction Temperature Range |
-55 to 150 |
℃ |
|
Symbol |
Parameter |
Conditions |
Min. |
Typ. |
Max. |
Unit |
|
BVDSS |
Drain-Source Breakdown Voltage | VGS=0V , ID=250uA |
25 |
--- |
--- |
V |
|
△BVDSS/△TJ |
BVDSS Temperature Coefficient | Reference to 25℃ , ID=1mA |
--- |
0.022 |
--- |
V/℃ |
|
RDS(ON) |
Static Drain-Source On-Resistance2 | VGS=10V , ID=20A |
--- |
0.7 |
0.9 | mΩ |
| VGS=4.5V , ID=20A |
--- |
1.4 |
1.9 | |||
|
VGS(th) |
Gate Threshold Voltage | VGS=VDS , ID =250uA |
1.0 |
--- |
2.5 |
V |
|
△VGS(th) |
VGS(th) Temperature Coefficient |
--- |
-6.1 |
--- |
mV/℃ | |
|
IDSS |
Drain-Source Leakage Current | VDS=20V , VGS=0V , TJ=25℃ |
--- |
--- |
1 |
uA |
| VDS=20V , VGS=0V , TJ=55℃ |
--- |
--- |
5 |
|||
|
IGSS |
Gate-Source Leakage Current | VGS=±20V , VDS=0V |
--- |
--- |
±100 |
nA |
|
gfs |
Forward Transconductance | VDS=5V , ID=10A |
--- |
40 |
--- |
S |
|
Rg |
Gate Resistance | VDS=0V , VGS=0V , f=1MHz |
--- |
3.8 |
1.5 |
Ω |
|
Qg |
Total Gate Charge (4.5V) | VDS=15V , VGS=4.5V , ID=20A |
--- |
72 |
--- |
nC |
|
Qgs |
Gate-Source Charge |
--- |
18 |
--- |
||
|
Qgd |
Gate-Drain Charge |
--- |
24 |
--- |
||
|
Td(on) |
Turn-On Delay Time | VDD=15V , VGEN=10V ,RG=1Ω, ID=10A |
--- |
33 |
--- |
ns |
|
Tr |
Rise Time |
--- |
55 |
--- |
||
|
Td(off) |
Turn-Off Delay Time |
--- |
62 |
--- |
||
|
Tf |
Fall Time |
--- |
22 |
--- |
||
|
Ciss |
Input Capacitance | VDS=15V , VGS=0V , f=1MHz |
--- |
7752 |
--- |
pF |
|
Coss |
Output Capacitance |
--- |
1120 |
--- |
||
|
Crss |
Reverse Transfer Capacitance |
--- |
650 |
--- |
