WSD20L120DN56 P-channel -20V -120A DFN5*6-8 WINSOK MOSFET

short description:

Model Number: WSD20L120DN56

BVDSS: -20V

RDSON: 2.1mΩ

ID: -120A

Channel: P-channel

Package: DFN5*6-8

Product Summery: The MOSFET WSD20L120DN56 operates at -20 volts and draws a current of -120 amps. It has a resistance of 2.1 milliohms, a P-channel, and comes in a DFN5*6-8 package.

Applications: E-cigarettes, wireless chargers, motors, drones, medical equipment, car chargers, controllers, digital devices, small appliances, and consumer electronics.

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Product Detail

Application

Product Tags

General Description

The WSD20L120DN56 is a top-performing P-Ch MOSFET with a high-density cell structure, giving superb RDSON and gate charge for most synchronous buck converter uses. The WSD20L120DN56 meets 100% EAS requirements for RoHS and environmentally friendly products, with full-function reliability approval.

Features

1,Advanced high cell density Trench technology
2,Super Low Gate Charge
3, Excellent CdV/dt effect decline
4, 100% EAS Guaranteed 5, Green Device Available

Applications

High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA, Networking DC-DC Power System, Load Switch, E-cigarette, Wireless Charger, Motors, Drones, Medical, Car Charger, Controller, Digital Products, Small Home Appliances, Consumer Electronics.

corresponding material number

AOS AON6411,NIKO PK5A7BA

Important parameters

Symbol	Parameter	Rating		Units
Symbol	Parameter	10s	Steady State	Units
VDS	Drain-Source Voltage	-20		V
VGS	Gate-Source Voltage	±10		V
ID@TC=25℃	Continuous Drain Current, VGS @ -10V1	-120		A
ID@TC=100℃	Continuous Drain Current, VGS @ -10V1	-69.5		A
ID@TA=25℃	Continuous Drain Current, VGS @ -10V1	-25	-22	A
ID@TA=70℃	Continuous Drain Current, VGS @ -10V1	-24	-18	A
IDM	Pulsed Drain Current2	-340		A
EAS	Single Pulse Avalanche Energy3	300		mJ
IAS	Avalanche Current	-36		A
PD@TC=25℃	Total Power Dissipation4	130		W
PD@TA=25℃	Total Power Dissipation4	6.8	6.25	W
TSTG	Storage Temperature Range	-55 to 150		℃
TJ	Operating Junction Temperature Range	-55 to 150		℃

Symbol	Parameter	Conditions	Min.	Typ.	Max.	Unit
BVDSS	Drain-Source Breakdown Voltage	VGS=0V , ID=-250uA	-20	---	---	V
△BVDSS/△TJ	BVDSS Temperature Coefficient	Reference to 25℃ , ID=-1mA	---	-0.0212	---	V/℃
RDS(ON)	Static Drain-Source On-Resistance2	VGS=-4.5V , ID=-20A	---	2.1	2.7	mΩ
RDS(ON)	Static Drain-Source On-Resistance2					mΩ
		VGS=-2.5V , ID=-20A	---	2.8	3.7
VGS(th)	Gate Threshold Voltage	VGS=VDS , ID =-250uA	-0.4	-0.6	-1.0	V
		VGS=VDS , ID =-250uA
△VGS(th)	VGS(th) Temperature Coefficient		---	4.8	---	mV/℃
IDSS	Drain-Source Leakage Current	VDS=-20V , VGS=0V , TJ=25℃	---	---	-1	uA
IDSS	Drain-Source Leakage Current					uA
		VDS=-20V , VGS=0V , TJ=55℃	---	---	-6
IGSS	Gate-Source Leakage Current	VGS=±20V , VDS=0V	---	---	±100	nA
gfs	Forward Transconductance	VDS=-5V , ID=-20A	---	100	---	S
Rg	Gate Resistance	VDS=0V , VGS=0V , f=1MHz	---	2	5	Ω
Qg	Total Gate Charge (-4.5V)	VDS=-10V , VGS=-4.5V , ID=-20A	---	100	---	nC
Qgs	Gate-Source Charge		---	21	---
Qgd	Gate-Drain Charge		---	32	---
Td(on)	Turn-On Delay Time	VDD=-10V , VGEN=-4.5V , RG=3Ω ID=-1A ,RL=0.5Ω	---	20	---	ns
Tr	Rise Time		---	50	---
Td(off)	Turn-Off Delay Time		---	100	---
Tf	Fall Time		---	40	---
Ciss	Input Capacitance	VDS=-10V , VGS=0V , f=1MHz	---	4950	---	pF
Coss	Output Capacitance		---	380	---
Crss	Reverse Transfer Capacitance		---	290	---