WSD2090DN56 N-channel 20V 80A DFN5*6-8 WINSOK MOSFET

Model Number: WSD2090DN56

BVDSS: 20V

RDSON: 2.8mΩ

ID: 80A

Channel: N-channel

Package: DFN5*6-8

Product Summery: The voltage of WSD2090DN56 MOSFET is 20V, the current is 80A, the resistance is 2.8mΩ, the channel is N-channel, and the package is DFN5*6-8.

Applications: Electronic cigarettes, drones, electrical tools, fascia guns, PD, small household appliances, etc.

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Product Detail

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Product Tags

General Description

The WSD2090DN56 is the highest performance trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The WSD2090DN56 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved.

Features

Advanced high cell density Trench technology, Super Low Gate Charge ,Excellent CdV / dt effect decline ,100% EAS Guaranteed, Green Device Available

Applications

Switch, Power System, Load Switch, electronic cigarettes, drones, electrical tools, fascia guns, PD, small household appliances, etc.

corresponding material number

AOS AON6572

Important parameters

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Symbol	Parameter	Max.	Units
VDSS	Drain-Source Voltage	20	V
VGSS	Gate-Source Voltage	±12	V
ID@TC=25℃	Continuous Drain Current, VGS @ 10V1	80	A
ID@TC=100℃	Continuous Drain Current, VGS @ 10V1	59	A
IDM	Pulsed Drain Current note1	360	A
EAS	Single Pulsed Avalanche Energy note2	110	mJ
PD	Power Dissipation	81	W
RθJA	Thermal Resistance, Junction to Case	65	℃/W
RθJC	Thermal Resistance Junction-Case 1	4	℃/W
TJ, TSTG	Operating and Storage Temperature Range	-55 to +175	℃

Electrical Characteristics (TJ=25 ℃, unless otherwise noted)

Symbol	Parameter	Conditions	Min	Typ	Max	Units
BVDSS	Drain-Source Breakdown Voltage	VGS=0V, ID=250μA	20	24	---	V
△BVDSS/△TJ	BVDSS Temperature Coefficient	Reference to 25℃ , ID=1mA	---	0.018	---	V/℃
VGS(th)	Gate Threshold Voltage	VDS= VGS, ID=250μA	0.50	0.65	1.0	V
RDS(ON)	Static Drain-Source On-Resistance	VGS=4.5V, ID=30A	---	2.8	4.0	mΩ
RDS(ON)	Static Drain-Source On-Resistance	VGS=2.5V, ID=20A	---	4.0	6.0	mΩ
IDSS	Zero Gate Voltage Drain Current	VDS=20V,VGS=0V	---	---	1	μA
IGSS	Gate-Body Leakage Current	VGS=±10V, VDS=0V	---	---	±100	nA
Ciss	Input Capacitance	VDS=10V,VGS=0V,f=1MHZ	---	3200	---	pF
Coss	Output Capacitance		---	460	---
Crss	Reverse Transfer Capacitance		---	446	---
Qg	Total Gate Charge	VGS=4.5V,VDS=10V,ID=30A	---	11.05	---	nC
Qgs	Gate-Source Charge		---	1.73	---
Qgd	Gate-Drain Charge		---	3.1	---
tD(on)	Turn-on Delay Time	VGS=4.5V, VDS=10V, ID=30ARGEN=1.8Ω	---	9.7	---	ns
tr	Turn-on Rise Time		---	37	---
tD(off)	Turn-off Delay Time		---	63	---
tf	Turn-off fall Time		---	52	---
VSD	Diode Forward Voltage	IS=7.6A,VGS=0V	---	---	1.2	V

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