WSD20100DN56 N-channel 20V 90A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET product overview
The voltage of WSD20100DN56 MOSFET is 20V, the current is 90A, the resistance is 1.6mΩ, the channel is N-channel, and the package is DFN5X6-8.
WINSOK MOSFET application areas
Electronic cigarettes MOSFET, drones MOSFET, electrical tools MOSFET, fascia guns MOSFET, PD MOSFET, small household appliances MOSFET.
WINSOK MOSFET corresponds to other brand material numbers
AOS MOSFET AON6572.
POTENS Semiconductor MOSFET PDC394X.
MOSFET parameters
|
Symbol |
Parameter |
Rating |
Units |
|
VDS |
Drain-Source Voltage |
20 |
V |
|
VGS |
Gate-Source Voltage |
±12 |
V |
|
ID@TC=25℃ |
Continuous Drain Current1 |
90 |
A |
|
ID@TC=100℃ |
Continuous Drain Current1 |
48 |
A |
|
IDM |
Pulsed Drain Current2 |
270 |
A |
|
EAS |
Single Pulse Avalanche Energy3 |
80 |
mJ |
|
IAS |
Avalanche Current |
40 |
A |
|
PD@TC=25℃ |
Total Power Dissipation4 |
83 |
W |
|
TSTG |
Storage Temperature Range |
-55 to 150 |
℃ |
|
TJ |
Operating Junction Temperature Range |
-55 to 150 |
℃ |
|
RθJA |
Thermal Resistance Junction-ambient 1(t≦10S) |
20 |
℃/W |
|
RθJA |
Thermal Resistance Junction-ambient 1(Steady State) |
55 |
℃/W |
|
RθJC |
Thermal Resistance Junction-case 1 |
1.5 |
℃/W |
|
Symbol |
Parameter |
Conditions |
Min |
Typ |
Max |
Unit |
|
BVDSS |
Drain-Source Breakdown Voltage | VGS=0V , ID=250uA |
20 |
23 |
--- |
V |
|
VGS(th) |
Gate Threshold Voltage | VGS=VDS , ID =250uA |
0.5 |
0.68 |
1.0 |
V |
|
RDS(ON) |
Static Drain-Source On-Resistance2 | VGS=10V , ID=20A |
--- |
1.6 |
2.0 |
mΩ |
|
RDS(ON) |
Static Drain-Source On-Resistance2 | VGS=4.5V , ID=20A |
1.9 |
2.5 |
mΩ | |
|
RDS(ON) |
Static Drain-Source On-Resistance2 | VGS=2.5V , ID=20A |
--- |
2.8 |
3.8 |
mΩ |
|
IDSS |
Drain-Source Leakage Current | VDS=16V , VGS=0V , TJ=25℃ |
--- |
--- |
1 |
uA |
|
VDS=16V , VGS=0V , TJ=125℃ |
--- |
--- |
5 |
|||
|
IGSS |
Gate-Source Leakage Current | VGS=±10V , VDS=0V |
--- |
--- |
±10 |
uA |
|
Rg |
Gate Resistance | VDS=0V , VGS=0V , f=1MHz |
--- |
1.2 |
--- |
Ω |
|
Qg |
Total Gate Charge (10V) | VDS=15V , VGS=10V , ID=20A |
--- |
77 |
--- |
nC |
|
Qgs |
Gate-Source Charge |
--- |
8.7 |
--- |
||
|
Qgd |
Gate-Drain Charge |
--- |
14 |
--- |
||
|
Td(on) |
Turn-On Delay Time | VDD=15V , VGS=10V , RG=3 ,
ID=20A |
--- |
10.2 |
--- |
ns |
|
Tr |
Rise Time |
--- |
11.7 |
--- |
||
|
Td(off) |
Turn-Off Delay Time |
--- |
56.4 |
--- |
||
|
Tf |
Fall Time |
--- |
16.2 |
--- |
||
|
Ciss |
Input Capacitance | VDS=10V , VGS=0V , f=1MHz |
--- |
4307 |
--- |
pF |
|
Coss |
Output Capacitance |
--- |
501 |
--- |
||
|
Crss |
Reverse Transfer Capacitance |
--- |
321 |
--- |
||
|
IS |
Continuous Source Current1,5 | VG=VD=0V , Force Current |
--- |
--- |
50 |
A |
|
VSD |
Diode Forward Voltage2 | VGS=0V , IS=1A , TJ=25℃ |
--- |
--- |
1.2 |
V |
|
trr |
Reverse Recovery Time | IF=20A , di/dt=100A/µs ,
TJ=25℃ |
--- |
22 |
--- |
nS |
|
Qrr |
Reverse Recovery Charge |
--- |
72 |
--- |
nC |
