WSD100N15DN56G N-channel 150V 100A DFN5X6-8 WINSOK MOSFET

Part Number：WSD100N15DN56G

BVDSS：150V

ID：100A

RDSON：6mΩ

Channel：N-channel

Package：DFN5X6-8

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Product Detail

The voltage of WSD100N15DN56G MOSFET is 150V, the current is 100A, the resistance is 6mΩ, the channel is N-channel, and the package is DFN5X6-8.

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Symbol	Parameter	Rating	Units
VDS	Drain-Source Voltage	150	V
VGS	Gate-Source Voltage	±20	V
ID	Continuous Drain Current, V_GS @ 10V(T_C=25℃)	100	A
IDM	Pulsed Drain Current	360	A
EAS	Single Pulse Avalanche Energy	400	mJ
P_D	Total Power Dissipation... _C=25℃)	160	W
RθJA	Thermal resistance, junction-ambient	62	℃/W
RθJC	Thermal resistance, junction-case	0.78	℃/W
TSTG	Storage Temperature Range	-55 to 175	℃
T_J	Operating Junction Temperature Range	-55 to 175	℃

Symbol	Parameter	Conditions	Min.	Typ.	Max.	Unit
BV_DSS	Drain-Source Breakdown Voltage	V_GS=0V , I_D=250uA	150	---	---	V
RDS(ON)	Static Drain-Source On-Resistance²	V_GS=10V , I_D=20A	---	9	12	mΩ
VGS(th)	Gate Threshold Voltage	V_GS=V_DS , I_D =250uA	2.0	3.0	4.0	V
IDSS	Drain-Source Leakage Current	V_DS=100V , V_GS=0V , T_J=25℃	---	---	1	uA
IGSS	Gate-Source Leakage Current	V_GS=±20V , V_DS=0V	---	---	±100	nA
Q_g	Total Gate Charge	V_DS=50V , V_GS=10V , I_D=20A	---	66	---	nC
Q_gs	Gate-Source Charge		---	26	---
Q_gd	Gate-Drain Charge		---	18	---
Td(on)	Turn-On Delay Time	V_DD=50V ,V_GS=10V R_G=2Ω, I_D=20A	---	37	---	ns
T_r	Rise Time		---	98	---
Td(off)	Turn-Off Delay Time		---	55	---
T_f	Fall Time		---	20	---
C_iss	Input Capacitance	V_DS=30V , V_GS=0V , f=1MHz	---	5450	---	pF
Coss	Output Capacitance		---	1730	---
C_rss	Reverse Transfer Capacitance		---	195	---