WSD100N06GDN56 N-channel 60V 100A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET product overview
The voltage of WSD100N06GDN56 MOSFET is 60V, the current is 100A, the resistance is 3mΩ, the channel is N-channel, and the package is DFN5X6-8.
WINSOK MOSFET application areas
Medical power supplies MOSFET, PDs MOSFET, drones MOSFET, electronic cigarettes MOSFET, major appliances MOSFET, and power tools MOSFET.
WINSOK MOSFET corresponds to other brand material numbers
AOS MOSFET AON6264C,AON6264E,AON6266E,AONS6662.STMicroelectronics MOSFET STL13N6F7,STL14N6F7.PANJIT MOSFET PSMQC33N6NS1.POTENS Semiconductor MOSFET PDC692X.
MOSFET parameters
|
Symbol |
Parameter |
Rating |
Units |
||
|
VDS |
Drain-Source Voltage |
60 |
V |
||
|
VGS |
Gate-Source Voltage |
±20 |
V |
||
|
ID1,6 |
Continuous Drain Current | TC=25°C |
100 |
A |
|
| TC=100°C |
65 |
||||
|
IDM 2 |
Pulsed Drain Current | TC=25°C |
240 |
A |
|
|
PD |
Maximum Power Dissipation | TC=25°C |
83 |
W |
|
| TC=100°C |
50 |
||||
|
IAS |
Avalanche Current, Single pulse |
45 |
A |
||
|
EAS 3 |
Single Pulse Avalanche Energy |
101 |
mJ |
||
|
TJ |
Maximum Junction Temperature |
150 |
℃ | ||
|
TSTG |
Storage Temperature Range |
-55 to 150 |
℃ | ||
|
RθJA1 |
Thermal Resistance Junction to ambient |
Steady State |
55 |
℃/W | |
|
RθJC1 |
Thermal Resistance-Junction to Case |
Steady State |
1.5 |
℃/W | |
|
Symbol |
Parameter |
Conditions |
Min. |
Typ. |
Max. |
Unit |
|
| Static | |||||||
|
V(BR)DSS |
Drain-Source Breakdown Voltage |
VGS = 0V, ID = 250μA |
60 |
V |
|||
|
IDSS |
Zero Gate Voltage Drain Current |
VDS = 48 V, VGS = 0V |
1 |
µA |
|||
|
TJ=85°C |
30 |
||||||
|
IGSS |
Gate Leakage Current |
VGS = ±20V, VDS = 0V |
±100 |
nA |
|||
| On Characteristics | |||||||
|
VGS(TH) |
Gate Threshold Voltage |
VGS = VDS, IDS = 250µA |
1.2 |
1.8 |
2.5 |
V |
|
|
RDS(on)2 |
Drain-Source On-state Resistance |
VGS = 10V, ID = 20A |
3.0 |
3.6 |
mΩ |
||
|
VGS = 4.5V, ID = 15A |
4.4 |
5.4 |
mΩ |
||||
| Switching | |||||||
|
Qg |
Total Gate Charge |
VDS=30V VGS=10V ID=20A |
58 |
nC |
|||
|
Qgs |
Gate-Sour Charge | 16 |
nC |
||||
|
Qgd |
Gate-Drain Charge |
4.0 |
nC |
||||
|
td (on) |
Turn-on Delay Time |
VGEN=10V VDD=30V ID=20A RG=Ω |
18 |
ns |
|||
|
tr |
Turn-on Rise Time |
8 |
ns |
||||
|
td(off) |
Turn-off Delay Time | 50 |
ns |
||||
|
tf |
Turn-off Fall Time | 11 |
ns |
||||
|
Rg |
Gat resistance |
VGS=0V, VDS=0V, f=1MHz |
0.7 |
Ω |
|||
| Dynamic | |||||||
|
Ciss |
In Capacitance |
VGS=0V VDS=30V f=1MHz |
3458 |
pF |
|||
|
Coss |
Out Capacitance | 1522 |
pF |
||||
|
Crss |
Reverse Transfer Capacitance | 22 |
pF |
||||
| Drain-Source Diode Characteristics and Maximum Ratings | |||||||
|
IS1,5 |
Continuous Source Current |
VG=VD=0V , Force Current |
55 |
A |
|||
|
ISM |
Pulsed Source Current3 | 240 |
A |
||||
|
VSD 2 |
Diode Forward Voltage |
ISD = 1A , VGS=0V |
0.8 |
1.3 |
V |
||
|
trr |
Reverse Recovery Time |
ISD=20A, dlSD/dt=100A/µs |
27 |
ns |
|||
|
Qrr |
Reverse Recovery Charge | 33 |
nC |
||||
