WSD100N06GDN56 N-channel 60V 100A DFN5X6-8 WINSOK MOSFET

Part Number：WSD100N06GDN56

BVDSS：60V

ID：100A

RDSON：3mΩ

Channel：N-channel

Package：DFN5X6-8

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WINSOK MOSFET product overview

The voltage of WSD100N06GDN56 MOSFET is 60V, the current is 100A, the resistance is 3mΩ, the channel is N-channel, and the package is DFN5X6-8.

WINSOK MOSFET application areas

Medical power supplies MOSFET, PDs MOSFET, drones MOSFET, electronic cigarettes MOSFET, major appliances MOSFET, and power tools MOSFET.

WINSOK MOSFET corresponds to other brand material numbers

AOS MOSFET AON6264C,AON6264E,AON6266E,AONS6662.STMicroelectronics MOSFET STL13N6F7,STL14N6F7.PANJIT MOSFET PSMQC33N6NS1.POTENS Semiconductor MOSFET PDC692X.

MOSFET parameters

Symbol	Parameter			Rating	Units
VDS	Drain-Source Voltage			60	V
VGS	Gate-Source Voltage			±20	V
I_D1,6	Continuous Drain Current	TC=25°C		100	A
		TC=100°C		65
IDM ²	Pulsed Drain Current	TC=25°C		240	A
PD	Maximum Power Dissipation	TC=25°C		83	W
		TC=100°C		50
IAS	Avalanche Current, Single pulse			45	A
EAS ³	Single Pulse Avalanche Energy			101	mJ
TJ	Maximum Junction Temperature			150	℃
TSTG	Storage Temperature Range			-55 to 150	℃
RθJA1	Thermal Resistance Junction to ambient		Steady State	55	℃/W
RθJC¹	Thermal Resistance-Junction to Case		Steady State	1.5	℃/W

Symbol	Parameter	Conditions		Min.	Typ.	Max.	Unit
Static
V(BR)DSS	Drain-Source Breakdown Voltage	VGS = 0V, ID = 250μA		60			V
IDSS	Zero Gate Voltage Drain Current	VDS = 48 V, VGS = 0V				1	µA
IDSS	Zero Gate Voltage Drain Current		T_J=85°C			30	µA
IGSS	Gate Leakage Current	VGS = ±20V, VDS = 0V				±100	nA
On Characteristics
VGS(TH)	Gate Threshold Voltage	VGS = VDS, IDS = 250µA		1.2	1.8	2.5	V
RDS(on)²	Drain-Source On-state Resistance	VGS = 10V, ID = 20A			3.0	3.6	mΩ
RDS(on)²	Drain-Source On-state Resistance	VGS = 4.5V, ID = 15A			4.4	5.4	mΩ
Switching
Qg	Total Gate Charge	VDS=30V VGS=10V ID=20A			58		nC
Qgs	Gate-Sour Charge				16		nC
Qgd	Gate-Drain Charge				4.0		nC
td (on)	Turn-on Delay Time	VGEN=10V VDD=30V ID=20A RG=Ω			18		ns
tr	Turn-on Rise Time				8		ns
td(off)	Turn-off Delay Time				50		ns
tf	Turn-off Fall Time				11		ns
Rg	Gat resistance	VGS=0V, VDS=0V, f=1MHz			0.7		Ω
Dynamic
Ciss	In Capacitance	VGS=0V VDS=30V f=1MHz			3458		pF
Coss	Out Capacitance				1522		pF
Crss	Reverse Transfer Capacitance				22		pF
Drain-Source Diode Characteristics and Maximum Ratings
IS1,5	Continuous Source Current	VG=VD=0V , Force Current				55	A
ISM	Pulsed Source Current3	VG=VD=0V , Force Current				240	A
VSD ²	Diode Forward Voltage	ISD = 1A , VGS=0V			0.8	1.3	V
trr	Reverse Recovery Time	I_SD=20A, dl_SD/dt=100A/µs			27		ns
Qrr	Reverse Recovery Charge	I_SD=20A, dl_SD/dt=100A/µs			33		nC

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