MOSFET conduction characteristics

Post Time: Jul-10-2024

MOSFET conductivity means that it is used as a switch, which is equivalent to a switch closing.NMOS is characterised as conducting when Vgs exceeds a limited value, which applies to the condition with the source connected to a grounded device, and only needs the gate voltage to be 4V or 10V. PMOS, on the other hand, conducts when Vgs falls below a certain value, and is suitable for situations where the source is connected to Vcc. However, although PMOS can be convenient as a high-grade driver, NMOS is generally used in high-grade drivers because of the large on-resistance, high price and cost, and few replacement types.

Whether it is NMOS or PMOS, there will be on-resistance after the on-resistance, so that the current in the resistance to consume a certain amount of power, this consumption is called the on-resistance loss. At this point, we just pick the on-resistance of small MOSFET can reduce the on-resistance loss, today's low-power MOSFET on-resistance is generally dozens of milliohms, or even a few milliohms of the appearance of the MOS in the case of on and as of the completion of the situation is not in a flash.
The voltage on both sides of the MOS has a process of decreasing, the current flowing through the process of increasing, in this period of time, the voltage and current multiplied by the size of the loss of the MOSFET. General switching loss is much larger than the loss of conduction, and if the higher the switching frequency, the greater the loss. The higher the multiplication of voltage and current at the moment of conduction, the higher the loss. If we can reduce the switching time, we can reduce the loss at each conduction, reduce the frequency of switching, also can reduce the frequency of switching within a certain period of time, so as to reduce the switching loss.

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