Do you know the three poles of MOSFET?

MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) has three poles which are:

Gate: G, the gate of a MOSFET is equivalent to the base of a bipolar transistor and is used to control the conduction and cut-off of the MOSFET. In MOSFETs, the gate voltage (Vgs) determines whether a conductive channel is formed between the source and drain, as well as the width and conductivity of the conductive channel. The gate is made of materials such as metal, polysilicon, etc., and is surrounded by an insulating layer (usually silicon dioxide) to prevent current from flowing directly into or out of the gate.

Source: S, the source of a MOSFET is equivalent to the emitter of a bipolar transistor and is where the current flows. In N-channel MOSFETs, the source is usually connected to the negative terminal (or ground) of the power supply, while in P-channel MOSFETs, the source is connected to the positive terminal of the power supply. The source is one of the key parts that form the conducting channel, which sends electrons (N-channel) or holes (P-channel) to the drain when the gate voltage is high enough.

Drain: D, the drain of a MOSFET is equivalent to the collector of a bipolar transistor and is where the current flows in. The drain is usually connected to the load and acts as a current output in the circuit. In a MOSFET, the drain is the other end of the conductive channel, and when the gate voltage controls the formation of a conductive channel between the source and drain, current can flow from the source through the conductive channel to the drain.

In a nutshell, the gate of a MOSFET is used to control on and off, the source is where the current flows out, and the drain is where the current flows in. Together, these three poles determine the operating state and performance of the MOSFET.