Floating Gate MOSFET Implementation: Key Steps and Industry Best Practices

The floating gate MOSFET (FGMOS) stands as a cornerstone of modern non-volatile memory technology. As a leading semiconductor components distributor, Olukey partners with WINSOK to deliver cutting-edge MOSFET solutions for various applications.

Essential Components of Floating Gate MOSFET Structure

Implementing a floating gate MOSFET requires precise attention to several critical components:

Gate Structure

Control gate (top layer)
Inter-poly dielectric
Floating gate (isolated)
Tunnel oxide layer

Substrate Elements

Source region
Drain region
Channel area
Bulk connection

Manufacturing Process Steps

Substrate preparation and cleaning
Growth of tunnel oxide layer
Deposition of first polysilicon layer (floating gate)
Formation of inter-poly dielectric
Deposition of second polysilicon layer (control gate)
Source/drain implantation
Metallization and passivation

Why Choose Olukey for Your MOSFET Needs?

As the authorized MOSFET supplier for WINSOK semiconductor products, we ensure:

Guaranteed authentic components
Technical support from experienced engineers
Competitive pricing and flexible order quantities
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Technical Implementation Considerations

Programming Mechanism

The programming of floating gate MOSFETs involves two primary mechanisms:

Channel Hot Electron Injection (CHEI)
Fowler-Nordheim Tunneling (FNT)

Erasing Methods

Common erasing techniques include:

UV light exposure (older technology)
Electrical erasure via FN tunneling
Bulk erasure operations

Critical Parameters for Optimal Performance

Parameter	Typical Range	Impact on Performance
Oxide Thickness	70-100 Å	Affects programming voltage and retention
Channel Length	0.13-0.5 µm	Influences programming efficiency
Programming Voltage	12-20V	Determines write speed and reliability